The barrier layer in Cu technology is essential to prevent Cu from diffusing into the dielectric layer at high temperatures; therefore, it must have a high stability and good adhesion to both Cu and the dielectric layer. In the past three decades, tantalum/tantalum nitride (Ta/TaN) has been widely used as an inter-layer to separate the dielectric layer and the Cu. However, to fulfill the demand for continuous down-scaling of the Cu technology node, traditional materials and technical processes are being challenged. Direct electrochemical deposition of Cu on top of Ta/TaN is not realistic, due to its high resistivity. Therefore, pre-deposition of a Cu seed layer by physical vapor deposition (PVD) or chemical vapor deposition (CVD) is necessary, but the non-uniformity of the Cu seed layer has a devastating effect on the defect-free fill of modern sub-20 or even sub-10 nm Cu technology nodes. New Cu diffusion barrier materials having ultra-thin size, high resistivity and stability are needed for the successful super-fill of trenches at the nanometer scale. In this review, we briefly summarize recent advances in the development of Cu diffusion-proof materials, including metals, metal alloys, self-assembled molecular layers (SAMs), two-dimensional (2D) materials and high-entropy alloys (HEAs). Also, challenges are highlighted and future research directions are suggested.

Liquid metal (LM) materials, including pure gallium (Ga) LM, eutectic alloys and their composites with organic polymers and inorganic nanoparticles, are cutting-edge functional materials owing to their outstanding electrical conductivity, thermal conductivity, extraordinary mechanical compliance, deformability and excellent biocompatibility. The unique properties of LM-based materials at room temperatures can overcome the drawbacks of the conventional electronic devices, particularly high thermal, electrical conductivities and their fluidic property, which would open tremendous opportunities for the fundamental research and practical applications of stretchable and wearable electronic devices. Therefore, research interest has been increasingly devoted to the fabrication methodologies of LM nanoparticles and their functional composites. In this review, we intend to present an overview of the state-of-art protocols for the synthesis of Ga-based materials, to introduce their potential applications in the fields ranging from wearable electronics, energy storage batteries and energy harvesting devices to bio-applications, and to discuss challenges and opportunities in future studies.