This paper presents experimental results on the creation of porous silicon structures with variable pore morphology (GPS-var). At a pore depth of up to several hundred microns, the structures are characterized by the presence of a layer with nanoscale porous structures (hereinafter, nanoporous) on the surface. As the depth of etching increases, the pores smoothly transform into spongy, and then into a columnar structures with pore sizes of about a micron.

The cytotoxicity of the silicon wafers' surface was studied on immortalized SC1 mouse fibroblasts. The standard for microelectronics methods of surface treatment of wafers was used: chemical treatment and etching, thermal oxidation, anodic etching of silicon, deposition of a graphene film. The cytotoxicity of methods used for silicon wafers surface's nanostructuring has been determined.

Titanium has been successfully used in dental implantology for a long time. Due to the osseointegration process, titanium implants are able to withstand the chewing load. This article is devoted to the study of surface treatment methods of titanium alloys and the study of their interaction with mesenchymal stem cells (MSCs). The surface microrelief can influence MSC differentiation in different ways, which subsequently gives it osteogenic potential. The paper proposes modes of surface modification of titanium alloys on Grade 4 and Grade 1 by chemical and electrochemical (anodizing) etching. The possibility of modifying the surface of titanium alloys using the synthesis of graphene layers has been proposed in this paper for the first time. The osteogenic potential of a particular surface was assessed by the number of mesenchymal stem cells cultured on them under identical conditions.

This review presents the results of the local formation of nanostructured porous silicon (NPSi) on the surface of silicon wafers by anodic etching using a durite intermediate ring. The morphological and crystallographic features of NPSi structures formed on n- and p-type silicon with low and relatively high resistivity have also been investigated. The proposed scheme allows one to experiment with biological objects (for example, stem cells, neurons, and other objects) in a locally formed porous structure located in close proximity to the electronic periphery of sensor devices on a silicon wafer.

The effect of photon annealing on the occurrence of deformations in the crystal structure of boron−doped silicon wafers produced by the Czochralski (Cz−Si) was studied by the method of triple−X−ray diffraction. It was found that the traditional annealing of silicon wafers with polished surfaces on both sides by halogen lamps in Photonic Annealing (PA) and rapid thermal annealing modes (RTA) leads to compression deformation. The same process with the use of original photo− mask, which allows local processing produces multiple, spatially separated regions of the plate produced by Lосаl Photonic Annealing (LPA) at relatively low temperatures (less than 55 °C), gives rise to a tensile strain. This established effect is not observed if on the back side of the plates there is mechanical gettering layer. The mechanism explaining the experimental results can be used in the formation of the charge pump in the structure of the photo electric converters (PEC).

The results of the further development of the original charge-pumping concept in the structure of photoelectric converters are considered. Charge pumps arise due to the formation of spatial...