Supercapacitors, based on fast ion transportation, are among the most promising energy storage solutions that can deliver fast charging–discharging within seconds and exhibit excellent cycling stability. The development of a good electrode material is one of the key factors in enhancing supercapacitor performance. Graphene (G), an allotrope of carbon that consists of a single layer of carbon atoms arranged in a hexagonal lattice, elicits research attention among scientists in the field of energy storage due to its remarkable properties, such as outstanding electrical conductivity, good chemical stability, and excellent mechanical behavior. Furthermore, numerous studies focus on 2D materials that are analogous to graphene as electrode supercapacitors, including transition metal dichalcogenides (TMDs). Recently, scientists and researchers are exploring TMDs because of the distinct features that make 2D TMDs highly attractive for capacitive energy storage. This study provides an overview of the structure, properties, synthesis methods, and electrochemical performance of G/TMD supercapacitors. Furthermore, the combination of G and TMDs to develop a hybrid structure may increase their energy density by introducing an asymmetric supercapacitor system. We will also discuss the future prospect of this system in the energy field.

The conventional electron transport layer (ETL) TiO₂ has been widely used in perovskite solar cells (PSCs), which have produced exceptional power conversion efficiencies (PCE), allowing the technology to be highly regarded and propitious. Nevertheless, the recent high demand for energy harvesters in wearable electronics, aerospace, and building integration has led to the need for flexible solar cells. However, the conventional TiO₂ ETL layer is less preferred, where a crystallization process at a temperature as high as 450 °C is required, which degrades the plastic substrate. Zinc oxide nanorods (ZnO NRs) as a simple and low-cost fabrication material may fulfil the need as an ETL, but they still suffer from low PCE due to atomic defect vacancy. To delve into the issue, several dopants have been reviewed as an additive to passivate or substitute the Zn²⁺ vacancies, thus enhancing the charge transport mechanism. This work thereby unravels and provides a clear insight into dopant engineering in ZnO NRs ETL for PSC.