Downscaling, miniaturization and 3D staking of the micro/nano devices are burgeoning phenomena in the semiconductor industry which have posed sophisticated challenges in the critical dimension (CD) metrology. Over the past few years, atomic force microscopy (AFM) has emerged as an important CD metrology technique in meeting these challenges because of its high accuracy, 3D imaging capability, high spatial resolution and non-destructive nature. In this article, advances in the AFM based critical dimension (CD) metrology are systematically reviewed and discussed. CD metrology AFM techniques, strengths, limitations and scanning algorithms are described. Developments towards accurate measurements such as creep and hysteresis compensation of the piezoelectric scanners, their calibration and tip characterization are discussed. In addition, image reconstruction and measures for achieving high accuracy CD measurements with hybrid metrology technique are also discussed. CD metrology challenges offered by the next generation lithography (NGL) techniques such as those associated with the 3D nanodevices of 10 nm node and beyond have been highlighted.