Ionic transport in solids parallel to grain or phase boundaries is usually strongly enhanced compared to the bulk. Transport perpendicular to an interface (across an interface) is often much slower. Therefore in modern micro- and nanoscaled devices, a severe influence on the ionic/atomic transport properties can be expected due to the high density of interfaces. Transport processes in boundaries of ionic materials are still not understood on an atomic scale. In most of the studies on ionic materials the interfacial transport properties are explained by the influence of space charge regions. Here we discuss the influence of interfacial strain at semicoherent or coherent heterophase boundaries on ionic transport along these interfaces in ionic materials. A qualitative model is introduced for (untilted and untwisted) hetero phase boundaries. For experimental verification, the interfacial oxygen ionic conductivity of different multilayer systems consisting of cubic ZrO₂ stabilised by aliovalent dopands (YSZ, CSZ) and an insulating oxide is investigated as a function of structural mismatch. Recent results on extremely fast ionic conduction in YSZ/SrTiO₃ thin film systems (“colossal ionic concuctivity at interfaces”) is discussed from the viewpoint of strain effects.

The oxygen ion conductivity of YSZ (ZrO₂ + 9.5 mol% Y₂O₃)/Y₂O₃ multilayer systems is measured parallel to the interfaces as a function of temperature between 350 and 700 °C. The multilayer samples are prepared by pulsed laser deposition (PLD). The film thicknesses, the crystallinity, the texture and the microstructure are investigated by SEM, XRD, HRTEM and SAED. To separate the interface contribution of the total conductivity from the bulk contribution the thickness of the YSZ and Y₂O₃ layers is varied systematically. The total conductivity of the YSZ films increases when their thickness is decreased from 0.53 μm to 24 nm. It depends linearly on the reciprocal thickness of the individual layers, thus on the number of YSZ/Y₂O₃ interfaces. This behaviour results from the parallel connection between individual conduction paths in the bulk and the interfacial regions. The activation energy for the ionic conductivity decreases from 1.13 to 0.99 kJ mol⁻¹ by decreasing the thicknesses of the individual YSZ layers. HRTEM studies show that the YSZ/Y₂O₃ interfaces are semicoherent. The correlation between interface structure and ionic conduction is discussed.

Internal and external interfaces in solids exhibit completely different transport properties compared to the bulk. Transport parallel to grain or phase boundaries is usually strongly enhanced. Transport perpendicular to an interface is usually blocked, i.e., transport across an interface is often much slower. Due to the high density of interfaces in modern micro- and nanoscaled devices, a severe influence on the total transport properties can be expected. In contrast to diffusion in metal grain boundaries, transport phenomena in boundaries of ionic materials are still less understood. The specific transport properties along metal grain boundaries are explained by structural factors like packing densities or dislocation densities in the interface region. In most studies dealing with ionic materials, the interfacial transport properties are merely explained by the influence of space charge regions. In this study the influence of the interface structure on the interfacial transport properties of ionic materials is discussed in analogy to metallic materials. A qualitative model based on the density of misfit dislocations and on interfacial strain is introduced for (untilted and untwisted) phase boundaries. For experimental verification, the interfacial ionic conductivity of different multilayer systems consisting of stabilised ZrO₂ and an insulating oxide is investigated as a funtion of structural mismatch. As predicted by the model, the interfacial conductivity increases when the lattice mismatch is increased.

First-ever lifetime test of a DMFC system lasting 25 600 h with a dynamic load profile of a material handling vehicle.

A phenomenological and analytical model for the influence of strain effects on atomic transport in columnar thin films is presented. A model system consisting of two types of crystalline thin films with coherent interfaces is assumed. Biaxial mechanical strain ε₀ is caused by lattice misfit of the two phases. The conjoined films consist of columnar crystallites with a small diameter l. Strain relaxation by local elastic deformation, parallel to the hetero-interface, is possible along the columnar grain boundaries. The spatial extent δ₀ of the strained hetero-interface regions can be calculated, assuming an exponential decay of the deformation-forces. The effect of the strain field on the local ionic transport in a thin film is then calculated by using the thermodynamic relation between (isostatic) pressure and free activation enthalpy ΔG^#. An expression describing the total ionic transport relative to bulk transport of a thin film or a multilayer as a function of the layer thickness is obtained as an integral average over strained and unstrained regions. The expression depends only on known material constants such as Young modulus Y, Poisson ratio ν and activation volume ΔV^#, which can be combined as dimensionless parameters. The model is successfully used to describe own experimental data from conductivity and diffusion studies. In the second part of the paper a comprehensive literature overview of experimental studies on (fast) ion transport in thin films and multilayers along solid–solid hetero-interfaces is presented. By comparing and reviewing the data the observed interface effects can be classified into three groups: (i) transport along interfaces between extrinsic ionic conductors (and insulator), (ii) transport along an open surface of an extrinsic ionic conductor and (iii) transport along interfaces between intrinsic ionic conductors. The observed effects in these groups differ by about five orders of magnitude in a very consistent way. The modified interface transport in group (i) is most probably caused by strain effects, misfit dislocations or disordered transition regions.