High-harmonic generation (HHG) in crystals offers a simple, affordable and easily accessible route to carrier-envelope phase (CEP) measurements, which scales favorably towards longer wavelengths. We present measurements of HHG in ZnO using few-cycle pulses at 3.1µm. Thanks to the broad bandwidth of the driving laser pulses, spectral overlap between adjacent harmonic orders is achieved. The resulting spectral interference pattern provides access to the relative harmonic phase, and hence, the CEP.

The generation of high order harmonics from femtosecond mid-IR laser pulses in ZnO has shown great potential to reveal new insight into the ultrafast electron dynamics on a few femtosecond timescale. In this work we report on the experimental investigation of photoluminescence and high-order harmonic generation (HHG) in a ZnO single crystal and polycrystalline thin film irradiated with intense femtosecond mid-IR laser pulses. The ellipticity dependence of the HHG process is experimentally studied up to the 17th harmonic order for various driving laser wavelengths in the spectral range 3–4 µm. Interband Zener tunneling is found to exhibit a significant excitation efficiency drop for circularly polarized strong-field pump pulses. For higher harmonics with energies larger than the bandgap, the measured ellipticity dependence can be quantitatively described by numerical simulations based on the density matrix equations. The ellipticity dependence of the below and above ZnO band gap harmonics as a function of the laser wavelength provides an efficient method for distinguishing the dominant HHG mechanism for different harmonic orders.

We present a detailed investigation of X-ray emission from both flat and nanowire zinc oxide targets irradiated by 60 fs 5 × 10¹⁶ W/cm² intensity laser pulses at a 0.8 µm wavelength. It is shown that the fluence of the emitted hard X-ray radiation in the spectral range 150–800 keV is enhanced by at least one order of magnitude for nanowire targets compared to the emission from a flat surface, whereas the characteristic K_α line emission (8.64 keV) is insensitive to the target morphology. Furthermore, we provide evidence for a dramatic increase of the fast electron flux from the front side of the nanostructured targets. We suggest that targets with nanowire morphology may advance development of compact ultrafast X-ray sources with an enhanced flux of hard X-ray emission that could find wide applications in highenergy density (HED) physics.

We present a simple non-destructive approach for studying the polarization dependence of nonlinear absorption processes in semiconductors. The method is based on measuring the yield of the near UV photoluminescence as a function of polarization and intensity of femtosecond laser pulses. In particular, we investigated the polarization dependence of three photon laser absorption in intrinsic and Al-doped ZnO thin films. Both specimen show stronger emission for linearly polarized excitation compared to circular polarization. The ratios for the three-photon absorption coefficients are about 1.8 and independent of the doping. It is shown that Al-doped films have lower threshold for stimulated emission in comparison to the intrinsic films.

Semiconductor nanowire (NW) lasers attract a lot of attention as potential elements of nanophotonic circuits and lab-on-a chip devices. Here, we report on the experimental investigation of stimulated near ultraviolet (NUV) emission, pumped by three-photon absorption from near infrared femtosecond laser pulses, from ZnO NW arrays of different morphologies and compare it to the bulk. The spectrally and temporally resolved measurements of the NUV emission show both strong enhancements in the absorption and emission properties of the nanowire arrays compared to bulk samples. Thus, we determine a many times higher three-photon absorption in the nanostructure morphology compared to the bulk material. Furthermore, the threshold pumping intensity for stimulated emission in a vertically oriented nanowire array is twice lower and the emission onset time is shorter than in randomly oriented arrays, revealing strong influence of the macroscopic nanowire arrangement.