High-power two-stage cascade GaSb-based type-I quantum well diode lasers emitting near 2 μm were designed and fabricated. Coated devices with cavity length of 3 mm generated about 2 W of continuous wave power from 100-μm-wide aperture at the current of 6 A. The power conversion efficiency peaked at 20%. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Design optimization eliminated parasitic optical absorption and thermionic emission, and included modification of the InAs quantum wells of electron and composition and doping profile of hole injectors. Utilization of the cascade pumping scheme yielded 2 μm lasers with improved output power and efficiency compared to existing state-of-the-art diodes.

The passively mode-locked type-I quantum well cascade diode lasers operating near 2.7 and 3.2 μm generated trains of the ∼10 ps long pulses with average power up to 10 mW. The devices based on laser heterostructures with reinforced carrier confinement required increased reverse bias voltages applied to absorber sections to operate in mode-locked regime. The autocorrelation measurements showed that lasers generated strongly chirped pulses with temporal width an order of magnitude above transform limit. The application of the external feedback led to narrowing of the laser emission spectra accompanied by an order of magnitude reduction of the intermodal beat note linewidth. The multiheterodyne beat notes have been observed for devices stabilized by external feedback.

A three-stage cascade GaSb-based diode laser heterostructure with an enhanced optical gain spectral bandwidth was designed and fabricated. The gain broadening was achieved by varying the thickness of the type-I quantum wells in different stages of the cascade active region from 10 to 14 nm. The structures were processed into bent ridge gain chips with virtually eliminated feedback from the anti-reflection-coated angled facet. The external cavity devices based on a novel gain chip design demonstrated a record wide tuning range from 2.79 to 3.23 μm in a Littrow cavity configuration at 20°C.

The laterally coupled distributed feedback (LC-DFB) GaSb-based type-I quantum well cascade diode lasers using the second- and the sixth-order gratings to stabilize the output spectrum near 3.22 μm were designed and fabricated. The laser heterostructure contained three cascades. The devices were manufactured using a single dry etching step defining the $\sim 5\text{-}\mathrm{\mu m}$-wide ridge with $\sim 5\text{-}\mathrm{\mu m}$-wide gratings sections adjacent to the ridge sides. The grating coupling coefficients were estimated to be about $1{\mathrm{cm}}^{-1}$. The stability of the single-frequency operation was ensured by alignment of the DFB mode to the relatively wide gain peak. The 2-mm-long second-order LC-DFB lasers generated above 10 mW of continuous-wave (CW) output power at 20°C in epi-side-up configuration and demonstrated power conversion efficiency above 2%. The sixth-order LC-DFB lasers showed lower efficiency but still generated several milliwatts of CW output power. The devices demonstrated a CW current tuning range of about 3.5 nm at the temperature of 20°C.

Nearly diffraction limited GaSb-based type-I quantum well cascade diode lasers emitting in the spectral region 1.95-2 μm were designed and fabricated. Two-step 5.5-μm-wide shallow and 14-μm-wide deep etched ridge waveguide design yielded devices generating stable single lobe beams with 250 mW of continuous wave output power at 20 °C. Quantum well radiative recombination current contributes about 13% to laser threshold as estimated from true spontaneous emission and modal gain analysis. Recombination at etched sidewalls of the 14-μmwide deep ridges controls about 30% of the threshold.