In the present study, results of the ⁶⁰ Co gamma-ray irradiation effect on the structural properties of the PMMA/PbO composite nanomaterial are presented. In order to explore the ⁶⁰ Co gamma-ray irradiation effect on PMMA/PbO thin film, the dielectric parameters have been calculated before and after two higher irradiation doses at room temperature in the frequency value of 1 MHz and 500 kHz. The important changes caused by the higher radiation in the dielectric properties in the depletion and accumulation regions have been attributed to the restructuring and reordering of the charges at the interface states.

Gamma-ray and neutron shielding properties of the AA6082 + TiO ₂ (0–50 wt%) functionally graded composite materials (FGCMs) were investigated using the PSD software. The values of the mean free path ( MFP ), half-value layer ( HVL ), linear attenuation coefficients ( LAC ), mass attenuation coefficient ( MAC ), tenth-value layer ( TVL ), exposure buildup factors ( EBF ), effective atomic number ( Z _eff ), effective conductivity ( C _eff ), and fast neutron removal cross-sections ( FNRC ) were found for the energy range between 0.015–15 MeV. The increase in the TiO ₂ content in the AA6082 composite material has raised the values of MAC and LAC . The calculations for the EBF s were carried out using the G-P fitting method for the energy range between 0.015–15 MeV and penetration depth of up to 40 mfp. The results revealed that HVL values ranged between 0.01–0.116 cm, TVL values ranged between 0.01–0.385 cm, FNRC values ranged between 7.918–10.017 cm ⁻¹ , and C _eff values ranged between 5.67 × 10 ¹⁰ and 9.85 × 10 ¹⁰ S m ⁻¹ . The AA6082 + TiO ₂ (50%) composite material was observed to provide the maximum photon and neutron shielding capacity since it offered the highest Z _eff , MAC , and FNRC values, and the lowest HVL value. In terms of several aspects, the research is considered original. Besides contributing to several technologies including nanotechnology and space technologies, present research’s results may contribute to nuclear technology.

We have investigated the effects of ⁶⁰ Co gamma-ray irradiation on the electrical properties of an Al/C ₂₄ H ₁₂ /p-Si metal-polymer-semiconductor (MPS) Schottky diode such as series resistance (R _s ), ideality factor (n) and barrier height (Φ _B ). The samples have been prepared using an evaporation technique and irradiated with a total dose range of 0–90 kGy at room temperature. Current-voltage (I–V) measurements have been performed before and after irradiation in the dark and at room temperature. It has been observed that the barrier height and series resistance values are decreased after irradiation while ideality factor is increased. Decreasing in R _s indicates that the product of the mobility and the free carrier concentration has increased due to the radiation defects. Experimental results show that this material can be modified using ⁶⁰ Co gamma-ray irradiation.

This research reveals the results of a comprehensive analysis of the optical and structural features of zinc selenide (ZnSe) thin film. The studied film was synthesized using the thermal evaporation method after preparation on the glass substrate. The film’s structural characteristics, which have been determined by using scanning electron microscopy (SEM), energy dispersive X-ray (EDX), and X-ray diffraction (XRD), confirm the polycrystalline nature of the films with a predominant cubic zinc-blende structure. The surface morphology investigated through SEM reveals a uniform grain distribution with minimal surface defects, indicating high-quality film formation. In order to examine the optical characteristics, the ultraviolet–visible spectroscopy method is used in a spectral range between 300 and 900 nm. In this way, the ultraviolet–visible spectroscopy data are utilized to obtain optical features such as extinction coefficient (k), optical band gap (E_g), refractive index (n), absorption coefficient (α), and optical conductivity (σ_opt). These optical properties are assessed using ultraviolet–visible spectroscopy, revealing a direct band gap of approximately 2.88 eV, which is consistent with the bulk properties of ZnSe and suitable for optoelectronic applications. The results of this study clearly show that the studied ZnSe film can be used for optoelectronic device applications.