In this letter, we report on accurate comparative measurements of Raman scattering from bulk crystalline Si and from hydrogenated amorphous Si thin films before and after their pulse laser annealing, performed for the purpose of Si crystalline grain formation. Being accompanied by the respective optical transmittance/reflectance measurements, these data allowed us to estimate the integrated Raman scattering cross section ratios of crystalline and microcrystalline Si to hydrogenated amorphous Si and to compare the results with those known from the literature. For crystalline Si, the obtained ratio is equal to 0.75, while for microcrystalline Si, it is equal to at least 2. Our results are found to contradict the proposed earlier exponential decay dependence of the integrated Raman scattering cross section ratio of microcrystalline to amorphous Si on the crystalline grain size. The physical reasons, which support our findings, are discussed.

Solution-processed furan/phenylene co-oligomer single crystals combine high photoluminescence quantum yield (>65%) and efficient charge transport (mobility 0.12 cm² V⁻¹ s⁻¹) making them promising materials for printable organic optoelectronics.

The p-Si(or n-Si)/GeO[SiO₂] (or GeO[SiO])/indium-tin-oxide (ITO) structures were fabricated by simultaneous evaporation of GeO₂ and SiO₂ (or SiO) powders in high vacuum and further deposition of ITO contacts using the magnetron sputtering technique. The structural properties of the GeO[SiO₂] and GeO[SiO] films were studied using FTIR and Raman spectroscopy. According to Raman data, the GeO[SiO] films deposited at a temperature of 100 °C contain amorphous Ge clusters. Their current-voltage characteristics were measured in the air atmosphere, and resistive switching (memristor effect) was observed in structures without a preliminary forming procedure. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport in the high-resistive state and the low-resistive state of memristors based on GeO[SiO₂] or GeO[SiO] films.

THe memristor is a key memory element for neuromorphic electronics and new generation flash memories. One of the most promising materials for memristor technology is silicon oxide SiO _x , which is compatible with silicon-based technology. In this paper, the electronic structure and charge transport mechanism in a forming-free SiO _x -based memristor fabricated with the plasma enhanced chemical vapor deposition method is investigated. The experimental current-voltage characteristics measured at different temperatures in high-resistance, low-resistance and intermediate states are compared with various charge transport theories. The charge transport in all states is limited by the space charge-limited current model. The trap parameters, responsible for the charge transport in a SiO _x -based memristor in different states, are determined.

Metal–insulator–semiconductor (MIS) structures based on thin GeO[SiO₂] and GeO[SiO] films on Si substrates were fabricated with indium-tin-oxide as a top electrode. The samples were divided it two series: one was left as deposited, while the second portion of MIS structures was annealed at 500 °C in argon for 20 min. The structural properties of as-deposited and annealed non-stoichiometric germanosilicate (GeSi_xO_y) films were studied using X-ray photoelectron spectroscopy, electron microscopy, Raman and infrared absorption spectroscopy, spectral ellipsometry, and transmittance and reflectance spectroscopy. It was found that the as-deposited GeO[SiO] film contained amorphous Ge clusters. Annealing led to the formation of amorphous Ge nanoclusters in the GeO[SiO₂] film and an increase of amorphous Ge volume in the GeO[SiO] film. Switching from a high resistance state (HRS OFF) to a low resistance state (LRS ON) and vice versa was detected in the as-deposited and annealed MIS structures. The endurance studies showed that slight degradation of the memory window occurred, mainly caused by the decrease of the ON state current. Notably, intermediate resistance states were observed in almost all MIS structures, in addition to the HRS and LRS states. This property can be used for the simulation of neuromorphic devices and related applications in data science.