Straining Graphene's Electronic States: The conduction electrons in graphene, single sheets of graphite, can have very high mobilities. Under the influence of an applied magnetic field, a series of energy steps, or Landau levels, can be observed that correspond to the conduction electrons traveling in cyclotron orbits. Recent theoretical work has indicated that if graphene layers are strained, the strain field creates a pseudomagnetic field that should also lead to observable Landau levels. Levy et al. (p. 544 ) used scanning tunneling microscopy to probe the energy levels of graphene grown on a platinum surface, which forms highly strained “nanobubbles.” The strain is equivalent to applying very high magnetic fields (in excess of 300 tesla). Thus, the electronic properties of graphene can indeed be modified using applied strain.

Watching Organic Reactions: Single-molecule studies can overcome the difficulty of inferring the various outcomes of reactions in ensemble measurements. De Oteyza et al. (p. 1434 , published online 30 May; see the Perspective by Giessibl ) used a variation of noncontact atomic force microscopy in which the imaging tip was derivatized with a single CO molecule to obtain subnanometer-resolution images of conjugated organic molecules undergoing reaction on a silver surface. Different thermally induced cyclization reactions of oligo- (phenylene-1,2-ethynylenes) were observed.

Chalcogen vacancies are generally considered to be the most common point defects in transition metal dichalcogenide (TMD) semiconductors because of their low formation energy in vacuum and their frequent observation in transmission electron microscopy studies. Consequently, unexpected optical, transport, and catalytic properties in 2D-TMDs have been attributed to in-gap states associated with chalcogen vacancies, even in the absence of direct experimental evidence. Here, we combine low-temperature non-contact atomic force microscopy, scanning tunneling microscopy and spectroscopy, and state-of-the-art ab initio density functional theory and GW calculations to determine both the atomic structure and electronic properties of an abundant chalcogen-site point defect common to MoSe₂ and WS₂ monolayers grown by molecular beam epitaxy and chemical vapor deposition, respectively. Surprisingly, we observe no in-gap states. Our results strongly suggest that the common chalcogen defects in the described 2D-TMD semiconductors, measured in vacuum environment after gentle annealing, are oxygen substitutional defects, rather than vacancies.