In this article, an ultrahigh repetition frequency sub-nanosecond pulse generator based on vanadium-compensated semi-insulating (VCSI) 4H-SiC photoconductive semiconductor switch (PCSS) under high bias electric field is presented. In this work, the 0.8 mm-thick 4H-SiC PCSS was found to work with electric fields up to 200 kV/cm and power capacity of 176 kW. The VCSI 4H-SiC PCSS response test was performed with a 1 MHz, 1030 nm laser cluster driver with configurable optical pulsewidth and current viewing resistor (CVR) high frequency response circuit. In the experiment, the laser pulsewidth was varied between 300 and 500 ps, and 1.5 ns. The system generated a 1 MHz repetition frequency pulse with a minimum half-width of 365 ps and less than 100 ps of jitter. The results revealed higher response performance for single/continuous pulse triggered light of various pulsewidths. Due to the low absorption efficiency of 4H-SiC for non-intrinsic light, an axial optical reflection trap structure was utilized to boost the light absorption efficiency of PCSS. The proposed structure significantly improved the light absorption performance of PCSS devices. The photocurrent increase ratio of roughly 115% was obtained. This study presents the first results of MHz re-frequency high-power switching in bulk semi-insulating 4H-SiC.

A frequency-agile microwave generating system is examined in this letter. Vanadium-compensated semi-insulation (VCSI) 4H-SiC photoconductive semi- conductor switch (PCSS) has been introduced to achieve wide-range frequency tuning. The output microwave frequency is tuned by adjusting the pulse width of the laser. Both the simulation and the experimental results show a tuning frequency range of 0.5 GHz to 10.0 GHz. The maximum operating output power of the system at 10 GHz is 1.13 W, equivalent to a charging voltage of 1.5 kV and a modulated light wavelength of 1064 nm. Further experiment revealed that with 355 nm laser and charging voltage of 5 kV, the output power could be increased to 86.5 kW.

The competitive relationship between the surface flashover of the coplanar electrodes and the body current channel was investigated. Breakdown behavior of GaAs photo-conductive semiconductor switch (PCSS) with a backside-light-receiving coplanar electrode structure was studied in this paper. GaAs PCSS was triggered by the laser pulse with an extrinsic absorption wavelength of 1064 nm. Special insulating construction was designed for GaAs PCSS, while the surface of the electrodes was encapsulated with transparent insulating adhesive. Our first set of experiments was at a bias voltage of 8 kV, and the surface flashover breakdown of GaAs PCSS was observed with 10 Hz triggering laser pulse. In the second experiment, at a bias voltage of 6 kV, the body current channel breakdown appeared on the backside of the GaAs PCSS. Compared with these results, the existence of a competitive relationship between the surface flashover breakdown and the body current channel breakdown of the GaAs PCSS was confirmed. When the bias voltage is set within a certain range (just reaching avalanche mode), GaAs PCSS with a backside-light-receiving coplanar electrode structure will undergo the body current channel breakdown. This finding is also consistent with the simulation results.

Photoconductive semiconductors operating in linear mode can be used for adaptive high-power microwave (HPM) generators by modulating incident light. This paper presents the design scheme and preliminary test results of a narrowband kW class adaptive photonic microwave generator by employing a wide-bandgap semi-insulating 6H-SiC photoconductive semiconductor and a burst-mode laser. The experimental scheme of the generator is described along with the circuit simulation of the radio frequency generator. The laser operated at a wavelength of 532 nm with a pulse width of 100 ns and a repetition rate of 100 Hz. The laser modulates the frequencies of the generated microwave, and preliminary tests are conducted in the frequency range of 0.8 - 1.2 GHz. The maximum output microwave power of the designed scheme reaches up to 2.6 kW when the bias voltage is 10 kV. The results confirm that this method can be used for high-power frequency-adjustable microwave signal generation. The microwave source system presented in this paper has continuously adjustable frequency and flexible waveform control.

Vanadium-compensated semi-insulating 4H–SiC photoconductive semiconductor switch (PCSS) has been a promising candidate for frequency-agile microwave generation. This application usually requires the PCSS to operate in linear mode so that a short carrier lifetime is required. However, in our experiment, some samples showed a long tail of photocurrent when illuminated with 532 nm light. To investigate the cause of the tail, we performed photocurrent tests at 532 and 1064 nm for two 4H–SiC samples with different doping. From the experimental results, we deduce that the cause is a hole trap that was not investigated previously. To verify it, we constructed a versatile transient simulation model of 4H–SiC triggered at sub-bandgap light. The model can deal with amphoteric V in steady state, the extrinsic light absorption and recombination process with more than one trap level. The simulation results agree well with the experiments. By characterizing the properties of the trap, we deduce that the unintentional doping of aluminum’s shallow acceptor level functions as the hole trap.

The SiC vertical photoconductive switch with an axial optical internal reflection trap to improve the ON-state performance is presented. The extrinsic light absorption of vanadium (V)-doped SiC photoconductive switch is low. As such an axial optical reflection trap is used to increase the optical path and total optical absorption. The trap consists of a convex lens, a silver mirror electrode with a hole, and a transparent electrode to create a quasi-total internal reflection structure. Simulation and experimental evaluation reveal that both the device’s light absorption and output current have been improved significantly. Compared with regular axial illumination without the reflective trapping arrangement, the structure fabricated on a V-doped 4H-SiC device demonstrates a $2.5\times $ improvement in photoelectric conversion responsivity.