Cheng-Liang Huang

Prof. Dr. Cheng-Liang Huang

Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan

Research Focus & Metrics

Academic Career Length

32Years (1995-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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10 May 2007 in Journal of the American Ceramic Society
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Journal Article
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Cheng-Liang HuangCheng-Liang Huang
Cheng-Liang Huang
JWJun‐Jie Wang
Jun‐Jie Wang
CHChi‐Yuen Huang
Chi‐Yuen Huang

9 February 2007 in Journal of the American Ceramic Society
Verified
Journal Article
Closed access
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Cheng-Liang HuangCheng-Liang Huang
Cheng-Liang Huang
JWJun‐Jie Wang
Jun‐Jie Wang
YCYu‐Pin Chang
Yu‐Pin Chang

1 October 2008 in Journal of the American Ceramic Society
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Journal Article
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Cheng-Liang HuangCheng-Liang Huang
Cheng-Liang Huang
SLShih‐Sheng Liu
Shih‐Sheng Liu

13 February 2009 in Journal of the American Ceramic Society
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Cheng-Liang HuangCheng-Liang Huang
Cheng-Liang Huang
JCJhih‐Yong Chen
Jhih‐Yong Chen

16 March 2009 in Journal of the American Ceramic Society
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Journal Article
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Cheng-Liang HuangCheng-Liang Huang
Cheng-Liang Huang
JCJhih‐Yong Chen
Jhih‐Yong Chen

5 January 2009 in Journal of the American Ceramic Society
Verified
Journal Article
Open access
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Cheng-Liang HuangCheng-Liang Huang
Cheng-Liang Huang
TYTung‐Jung Yang
Tung‐Jung Yang
CHChung‐Chia Huang
Chung‐Chia Huang
The microstructure and microwave dielectric properties of a (1− x )ZnAl 2 O 4 – x TiO 2 ceramic system prepared by the mixed oxide route have been investigated. The phases of ZnAl 2 O 4 and TiO 2 co‐exist with each other and form a two‐phase system, which is confirmed by the X‐ray diffraction patterns and the energy dispersive X‐ray spectrometer analysis. The microwave dielectric properties of the specimens are strongly related to the sintering temperature, the density, and the mole ratio of ZnAl 2 O 4 /TiO 2 . The sintering temperature of the specimen can be effectively lowered by increasing the TiO 2 content. The Q u × f values of the ceramics can be significantly boosted by adding an appropriate amount of TiO 2 and by sintering at a suitable temperature. Consequently, a very high Q u × f of 277 000 GHz associated with an ɛ r of 25.2 and a large resonant frequency (τ f ) of 177 ppm/°C are obtained using 0.5ZnAl 2 O 4 –0.5TiO 2 ceramics at 1390°C/4 h. These unique properties can be utilized as a τ f compensator for dielectrics that would require extremely low loss. The MgTiO 3 and Mg 4 Nb 2 O 9 having negative τ f were mixed with 0.5ZnAl 2 O 4 –0.5TiO 2 ceramics to achieve dielectrics with a low ɛ r , a high Q u × f , and a nearly‐zero τ f . In addition, a circle dual‐mode microstrip bandpass filter is designed and fabricated using the proposed dielectric to study its performance.