We report the investigation of a strong interband photon drag effect in multilayer graphene leading to efficient emission of terahertz radiation. The obtained terahertz photoresponse of graphene layers exhibits peculiarities fundamentally predicted for free carrier transport in two-dimensional electronic systems. Owing to significant light absorption in gapless graphene, where each absorbed photon produces an electron-hole pair with the highest possible kinetic energy, the photon drag mechanism provides a possibility to achieve efficient conversion of light into broadband terahertz radiation as well as new ways towards vectorial control of the generated terahertz radiation in graphene-based materials.

Graphene has recently become a unique playground for studying light-matter interaction effects in low-dimensional electronic systems. Being of strong fundamental importance, these effects also open a wide range of opportunities in photonics and optoelectronics. In particular, strong and broadband light absorption in graphene allows one to achieve high carrier densities essential for observation of nonlinear optical phenomena. Here, we make use of strong photon-drag effect to generate and optically manipulate ultrafast photocurrents in graphene at room temperature. In contrast to the recent reports on injection of photocurrents in graphene due to external or built-in electric field effects and by quantum interference, we force the massless charge carriers to move via direct transfer of linear momentum from photons of incident laser beam to excited electrons in unbiased sample. Direction and amplitude of the drag-current induced in graphene are determined by polarization, incidence angle and intensity of the obliquely incident laser beam. We also demonstrate that the irradiation of graphene with two laser beams of the same wavelength offers an opportunity to manipulate the photocurrents in time domain. The obtained all-optical control of the photocurrents opens new routes towards graphene based high-speed and broadband optoelectronic devices.

We report stable, passive, continuous-wave (CW) mode-locking of a compact diode-pumped waveguide Nd:YAG laser with a single-layer graphene saturable absorber. The depressed cladding waveguide in the Nd:YAG crystal is fabricated with an ultrafast laser inscription method. The saturable absorber is formed by direct deposition of CVD single-layer graphene on the output coupler. The few millimeter-long cavity provides generation of 16-ps pulses with repetition rates in the GHz range (up to 11.3 GHz) and 12 mW average power. Stable CW mode-locking operation is achieved by controlling the group delay dispersion in the laser cavity with a Gires–Tournois interferometer.

It has been experimentally shown that water vapor thermal treatment of silicate glasses with silver ions introduced by ion exchange leads to the formation of a silver nanoparticle layer with a high packing density on the glass surface. The results of studying the morphology of samples by atomic force and electron microscopy and X-ray spectral analysis of the composition of nanoparticles, as well as the optical density and luminescence spectra in different stages of the treatment, are presented. Mechanisms explaining the processes responsible for silver nanoparticle formation upon water vapor thermal treatment on the glass surface after ion exchange are proposed.