Surface plasmons are coherent and collective electron oscillations confined at the dielectric–metal interface. Benefitting from the inherent subwavelength nature of spatial profile, surface plasmons can greatly accumulate the optical field and energy on the nanoscale and dramatically enhance various light–matter interactions. The properties of surface plasmons are strongly related to materials and structures, so that metals, semiconductors and two-dimensional materials with various morphologies and structures can have alternating plasmonic wavelengths ranging from ultraviolet, visible, near infrared to far infrared. Because the electric field can be enhanced by orders of magnitude within plasmonic structures, various light–matter interaction processes including fluorescence, Raman scattering, heat generation, photoacoustic effects, photocatalysis, nonlinear optical conversion, and solar energy conversion, can be significantly enhanced and these have been confirmed by both theoretical, computational and experimental studies. In this review, we present a concise introduction and discussion of various plasmon-enhanced light–matter interaction processes. We discuss the physical and chemical principles, influencing factors, computational and theoretical methods, and practical applications of these plasmon-enhanced processes and phenomena, with a hope to deliver guidelines for constructing future high-performance plasmonic devices and technologies.

Recent achievements in semiconductor surface‐enhanced Raman scattering (SERS) substrates have greatly expanded the application of SERS technique in various fields. However, exploring novel ultra‐sensitive semiconductor SERS materials is a high‐priority task. Here, a new semiconductor SERS‐active substrate, Ta₂O₅, is developed and an important strategy, the “coupled resonance” effect, is presented, to optimize the SERS performance of semiconductor materials by energy band engineering. The optimized Mo‐doped Ta₂O₅ substrate exhibits a remarkable SERS sensitivity with an enhancement factor of 2.2 × 10⁷ and a very low detection limit of 9 × 10⁻⁹ m for methyl violet (MV) molecules, demonstrating one of the highest sensitivities among those reported for semiconductor SERS substrates. This remarkable enhancement can be attributed to the synergistic resonance enhancement of three components under 532 nm laser excitation: i) MV molecular resonance, ii) photoinduced charge transfer resonance between MV molecules and Ta₂O₅ nanorods, and iii) electromagnetic enhancement around the “gap” and “tip” of anisotropic Ta₂O₅ nanorods. Furthermore, it is discovered that the concomitant photoinduced degradation of the probed molecules in the time‐scale of SERS detection is a non‐negligible factor that limits the SERS performance of semiconductors with photocatalytic activity.

The outbreak of coronavirus disease 2019 has seriously threatened human health. Rapidly and sensitively detecting SARS-CoV-2 viruses can help control the spread of viruses. However, it is an arduous challenge to apply semiconductor-based substrates for virus SERS detection due to their poor sensitivity. Therefore, it is worthwhile to search novel semiconductor-based substrates with excellent SERS sensitivity. Herein we report, for the first time, Nb₂C and Ta₂C MXenes exhibit a remarkable SERS enhancement, which is synergistically enabled by the charge transfer resonance enhancement and electromagnetic enhancement. Their SERS sensitivity is optimized to 3.0 × 10⁶ and 1.4 × 10⁶ under the optimal resonance excitation wavelength of 532 nm. Additionally, remarkable SERS sensitivity endows Ta₂C MXenes with capability to sensitively detect and accurately identify the SARS-CoV-2 spike protein. Moreover, its detection limit is as low as 5 × 10⁻⁹ M, which is beneficial to achieve real-time monitoring and early warning of novel coronavirus. This research not only provides helpful theoretical guidance for exploring other novel SERS-active semiconductor-based materials but also provides a potential candidate for the practical applications of SERS technology.