Thin metal films have recently attracted large interest due to their practical application in photo-detectors, solar cells and quantum electronics. It is known that thin films of noble metals such as Au, Ag, and Cu have a maximum optical transmittance in the shorter part of spectrum.In our work, optical properties of thin metals films deposited by thermal evaporation and low pressure (1.33·10-5 - 1.33·10-4 Pa) DC plasma sputtering were investigated. Such low pressure is provided by triode sputtering method which supports a ballistic type of mass transfer between the sputtering target and the substrate. This method enables fine control of the film thickness and its density. Comparison of the films deposited by mentioned above two methods on glass substrates shows significant differences in their optical and electrical properties. Thin films of following metals: Sn, Al, V, Ti, Ni, Mo, Ta, W, Au, Ag, and Cu were deposited on glass and their optical and electrical properties were studied. The transmission spectra of thin films of various metals have significant differences. In our paper we discuss the causes of these differences

Localized surface plasmons-polaritons represent collective behavior of free electrons confined to metal particles. This effect may be used for enhancing efficiency of solar cells and for other opto-electronic applications. Plasmon resonance strongly affects optical properties of ultra-thin, island-like, metal films. In the present work, the Finite Difference Time Domain (FDTD) method is used to model transmittance spectra of thin gold island films grown on a glass substrate. The FDTD calculations were performed for island structure, corresponding to the Volmer-Weber model of thin film growth. The proposed simulation model is based on fitting of experimental data on nanostructure of ultra-thin gold films, reported in several independent studies, to the FDTD simulation setup. The results of FDTD modeling are then compared to the experimentally measured transmittance spectra of prepared thin gold films and found to be in a good agreement with experimental data.

Various topological modifications of diode–capacitor voltage multipliers are considered. All the topologies are based on two known schemes: Cockcroft–Walton and Dickson. These topologies are built combined with a boost-converter, operating at a high switching frequency. Such a solution allows reducing the values of the capacitors. The proposed topologies can also be used by feeding them directly from a three-phase network through the regular rectifier; in this case the influence of such circuits on a supply network is reduced. A number of novel modifications of multipliers, having their specific features, are obtained. The procedure of calculating the output voltage, depending on the capacitor values and load parameters is proposed and the design formulas for the output voltage of some of the schemes are developed. It is shown that a decrease in the output voltage is caused by some sort of internal resistance. The essentially similar operating modes of different topologies are characterised by a different value of such a resistance, and accordingly by a different internal voltage drop. Dynamic models for some of the proposed topologies are also developed. The computer simulation and the experimental results proved the theoretical expectations.

Physical properties of thin films significantly differ from those of bulk materials. Also, these properties are influenced from the technological parameters of the films deposition technique. Therefore, characterization methods for evaluation of thin film properties become of high importance. A novel approach to the well-known "Hot-Probe" method is proposed and applied in our work. The conventional Hot Probe characterization method enables only the definition of a semiconductor type, P or N, by identifying the majority of the charged carriers. According to the new Hot Probe technique, one can measure and calculate the impurities concentration and charged carriers dynamic parameters. Feasibility proof of the upgraded Hot Probe method was done in Si and Ge bulk, and in thin film semiconductor samples of In2O3 and VO2.