Sulfur defective V₅S₈/CNFs is synthesized by an electrospinning method, followed by sulfuration treatment. The obtained composite exhibits attractive capacities and ultra-stable cycling performances when using as anode materials for sodium-ion and potassium-ion batteries.

A first-principles investigation of the topological quantum phase transition of AEIn ₂ As ₂ (AE = Ca, Sr, Ba) under pressure.

The inverse spin Hall effect is a critical method for detecting spin Hall conductivity. Unearthing the physical relationship between electronic structure and spin Hall conductivity is conducive to establishing an intrinsic link between microstructure and macroscopic phenomena. Here, we report MnBi₂Te₄ as an ideal candidate: a stable, inversion symmetry-broken magnetic topological insulator for investigating the intrinsic correlation between spin Hall conductivity signal reversal and electronic structure. The valence band exhibits a significant Rashba spin splitting, with a magnitude reaching up to 4.61 eV/Å. We identify robust topological properties independent of Rashba and Lifshitz spin-splitting types. Moreover, transitioning the spin-splitting type not only widens the bulk band gap, enhancing the spin Hall conductivity plateau, but also triples the intrinsic spin Hall conductivity value. We propose the inverse spin Hall effect that is tunable by spin-splitting types, thereby advancing the research on the microscopic electronic mechanisms of spin current detection.

Topological phase transition processes in FM-z order FeBi₂Te₄ under pressure are determined and topologically classified.

In recent years, the discovery of ‘magic angle’ graphene has given new inspiration to the formation of heterojunctions. Similarly, the use of hexagonal boron nitride, known as white graphene, as a substrate for graphene devices has more aroused great interest in the graphene/hexagonal boron nitride heterostructure system. Based on the first principles method of density functional theory, the band structure, density of states, Mulliken population, and differential charge density of a tightly packed model of twisted graphene/hexagonal boron nitride/graphene sandwich structure have been studied. Through the establishment of heterostructure models twisted bilayer-graphene inserting hBN with different twisted angles, it was found that the band gap, Mulliken population, and charge density, exhibited specific evolution regulars with the rotation angle of the upper graphene, showing novel electronic properties and realizing metal–insulator phase transition. We find that the particular value of the twist angle at which the metal–insulator phase transition occurs and propose a rotational regulation mechanism with angular periodicity. Our results have guiding significance for the practical application of heterojunction electronic devices.