Today, the optimum material systems for photoconductive emitters and receivers are different. In THz reflection measurements, this leads to complicated optics or performance compromises. We present photoconductive emitters and detectors fabricated from molecular beam epitaxy (MBE) grown iron (Fe) doped InGaAs, which are well suited for a THz time-domain spectroscopy as both emitters and detectors. As a photoconductive emitter, 75 μW ± 5 μW of radiated THz power was measured. As a detector, THz pulses with a bandwidth of up to 6 THz and a peak dynamic range of 95 dB could be detected. These results are comparable to state-of-the-art THz photoconductors, which allows for simple reflection measurements without a performance decrease. The incorporation of Fe in InGaAs during MBE growth is investigated by secondary ion mass spectroscopy, Hall, and transient differential transmission measurements. Growth temperatures close to 400 °C allow for homogeneous Fe doping concentrations up to 5 × 10²⁰cm⁻³ and result in a photoconductor with an electron lifetime of 0.3 ps, a resistivity of 2 kΩ cm, and an electron mobility higher than 900 cm² V⁻¹ s⁻¹. We show that iron dopants are incorporated up to a maximum concentration of 1 × 10¹⁷cm⁻³ into substitutional lattice sites. The remaining dopants are electrically inactive and form defects that are anneal-stable up to a temperature of 600 °C. The fast recombination center in Fe-doped InGaAs is an unidentified defect, representing ≈0.5% of the nominal iron concentration. The electron and hole capture cross section of this defect is determined as ${\sigma }_e$ = 3.8 × 10⁻¹⁴ cm² and ${\sigma }_h$ = 5.5 × 10⁻¹⁵ cm², respectively.

We investigate photoconductive terahertz (THz) emitters compatible with 1550 nm excitation for THz time-domain spectroscopy (TDS). The emitters are based on rhodium (Rh) doped InGaAs grown by molecular beam epitaxy. InGaAs:Rh exhibits a unique combination of ultrashort trapping time, high electron mobility, and high resistivity. THz emitters made of InGaAs:Rh feature an emitted THz power of 637 μW at 28 mW optical power and 60 kV/cm electrical bias field. In particular for a fiber coupled photoconductive emitter, this is an outstanding result. When these emitters are combined with InGaAs:Rh based receivers in a THz TDS system, 6.5 THz bandwidth and a record peak dynamic range of 111 dB can be achieved for a measurement time of 120 s.

Continuous wave THz (cw THz) systems define the state-of-the-art in terms of spectral resolution in THz spectroscopy. Hitherto, acquisition of broadband spectra in a cw THz system was always connected with slow operation. Therefore, high update rate applications like inline process monitoring and non-destructive testing are served by time domain spectroscopy (TDS) systems. However, no fundamental restriction prevents cw THz technology from achieving faster update rates and be competitive in this field. In this paper, we present a fully fiber-coupled cw THz spectrometer. Its sweep speed is two orders of magnitude higher compared to commercial state-of-the-art systems and reaches a record performance of 24 spectra per second with a bandwidth of more than 2 THz. In the single-shot mode, the same system reaches a peak dynamic range of 67 dB and exceeds a value of 100 dB with averaging of 7 min, which is among the highest values ever reported. The frequency steps can be as low as 40 MHz. Due to the fully homodyne detection, each spectrum contains full amplitude and phase information. This demonstration of THz-spectroscopy at video-rate is an essential step towards applying cw THz systems in non-destructive, in line testing.

We report on, to the best of our knowledge, the first absolute terahertz (THz) power measurement of a photoconductive emitter developed for time-domain spectroscopy (TDS). The broadband THz radiation emitted by a photoconductor optimized for the excitation with 1550-nm femtosecond pulses was measured by an ultrathin pyroelectric thin-film (UPTF) detector. We show that this detector has a spectrally flat transmission between 100 GHz and 5 THz due to special conductive electrodes on both sides of the UPTF. Its flat responsivity allows the calibration with a standard detector that is traceable to the International System of Units (SI) at the THz detector calibration facility of PTB. Absolute THz power in the range from below 1 μW to above 0.1 mW was measured.

The increasing demand for high-capacity wireless communication requires data links at millimeter waves and terahertz frequencies, respectively. At those frequencies, electronic and photonic technologies compete to prove powerful transmitters and receivers. In this work, we demonstrate a wireless link at 300 GHz using a fiber-coupled PIN photodiode as the transmitter. Thus, the whole emitter side is based on components and techniques from standard fiber-optical communication, which inherently enable broadband data channels. We investigated two antenna designs with amplitude modulated and coherent data signals. Despite similar characteristics in terms of output power and carrier bandwidth, the quality of the data signals differed significantly. In addition, we found that the bit-error ratio (BER) scales non-monotonically with the optical input power of the photodiode, which is proportional to the terahertz output power. Depending on the modulation format and the symbol rate, we identified the optimal driving conditions of the photodiode. For amplitude modulation at 5 Gbit/s, we achieved error-free transmission with a BER of 7.5 × 10 ⁻¹³ . QPSK modulation was error-free up to 64 Gbit/s. The highest line rate of 160 Gbit/s was achieved with 32QAM modulation. This corresponds to 133 Gbit/s net data rate after forward-error correction with 20% overhead. The highest spectral efficiency was achieved with 64QAM at 8 GBaud, i.e., 48 Gbit/s line rate. The presented results highlight the high bandwidth of photonic wireless THz links. Furthermore, the carefully analysis helps to improve the quality of future wireless links in the 300 GHz band.

The properties of rhodium (Rh) as a deep-level dopant in InGaAs lattice matched to InP grown by molecular beam epitaxy are investigated. When InGaAs:Rh is used as an ultrafast photoconductor, carrier lifetimes as short as 100 fs for optically excited electrons are measured. Rh doping compensates free carriers so that a near intrinsic carrier concentration can be achieved. At the same time, InGaAs:Rh exhibits a large electron mobility of 1000 cm²/V s. Therefore, this material is a very promising candidate for application as a semi-insulating layer, THz antenna, or semiconductor saturable absorber mirror.