Indium tin oxide (ITO) thin films are widely used as transparent electrodes in electronic devices. Many of those electronic devices are heat sensitive, thus their manufacturing process steps should not exceed 100 °C. Manufacturing competitive high-quality ITO films at low temperature at industrial scale is still a challenge. Magnetron sputtering technology is the most suitable technology fulfilling those requirements. However, ITO layer properties and the reproducibility of the process are extremely sensitive to process parameters. Here, morphological, structural, electrical, and optical characterization of the ITO layers deposited at low temperature has been successfully correlated to magnetron sputtering process parameters. It has been demonstrated that the oxygen flow controls and influences layer properties. For oxygen flow between 3–4 sccm, high quality crystalline layers were obtained with excellent optoelectronic properties (resistivity 80%). The optimized conditions were applied to successfully manufacture transparent ITO heaters on large area glass and polymeric components. When a low supply voltage (8 V) was applied to transparent heaters (THs), de-icing of the surface was produced in less than 2 min, showing uniform thermal distribution. In addition, both THs (glass and polycarbonate) showed a great stability when exposed to saline solution.

This paper presents a study on the development and optimisation of thin films of nickel-vanadium oxide (NiV_xO_y) deposited by DC reactive magnetron sputtering (RMS) controlled by P.E.M. (plasma emission monitoring). The hysteresis behaviour of the Ni emission signal as a function of oxygen incorporation was analysed using optical emission spectroscopy (OES), enabling the identification of critical working points along the hysteresis loop and their correlation with film growth mechanisms. Compared to the non-monotonic nature of the target discharge voltage signal, OES provided a simplified response for real-time process control. A set of coatings was deposited under various working pressures (0.6 and 2.0 Pa) and plasma emission monitoring (P.E.M.) conditions and was thoroughly characterised in terms of microstructure, composition, optical modulation, and electrochemical performance. Films deposited at high pressure and under 30% P.E.M. conditions showed an optimal balance between optical modulation (21%) and charge density (4 mC/cm²), which was attributed to the increased Ni³⁺ content and the surface cracks at low density.