A method of constructing radiomeasuring microelectronic transducers of physical quantities on the basis of thermoreactive, photoreactive, magneticreactive and tenzoreaktive effects in sensitive bipolar and field effect transistor elements that served as the basis of creation of radiomeasuring transducers with frequency output, microelectronic manufacturing technology and improved metrology and economic indicators.

In the paper the results of theoretical and experimental researches of the chaos oscillator with inertial non-linearity based on a bipolar transistor structure with negative resistance are given. The dynamic processes in such oscillator are shown to be described with the Anishchenko-Astakhov mathematical model. Numerical simulation results are confirmed with experimental data.

The opportunity of direct transformation of pressure in frequency is shown on the basis of the hybrid integrated circuit consisting of the two-collector tenzosensitive transistor and the field two-gate transistor with an active inductive element on the basis of the bipolar transistor with a phase-shifting RC chain. Analytical dependencies of transformation function and the equation of sensitivity are received. Theoretical and experimental researches have shown, that sensitivity of the transducer makes 1,55-1,10 kHz /kPa.

The experimental research of characteristics of the microwave oscillator based on the structure of static inductance transistor has been carried out and the model of its static and dynamic current-voltage characteristics has been improved. The results of the experimental research show that oscillating frequency changes from 770 to 900MHz, amplitude of generate oscillations changes from 5 to 22 V, average power of oscillations is 96mW, coefficient of efficiency is 80-85% when supply voltage variation is from 9 to 30 V. Calculation of characteristics by means of the simplified charge model of the structure of static inductance transistor gives quite accurate description of characteristics of the active element of the oscillator.

In the given article the possibility of making the microelectronic transducer of pressure with a frequency output signal is shown on the basis of the autogenerating arrangement which will consist of bipolar transistor and MOSFET transistor. The change of pressure of bipolar transistor is proportionally the frequency generation. Analytical dependencies of function transformation and sensitivity are received. The deformation changes of the parameters tensiosensitivity bipolar transistor are designed. Sensitivity of the arrangement 2,0-4,25 kHz / Pa·10⁵. Ill. 9, bibl. 14 (in English; abstracts in English and Lithuanian).DOI: http://dx.doi.org/10.5755/j01.eee.121.5.1661