Perovskite materials have emerged as one of the most promising classes of compounds in recent years due to their unique combination of electrical, dielectric, and magnetic properties, which make them ideal candidates for a wide range of advanced technological applications. This comprehensive review explores the latest developments in the electrical, dielectric, and magnetic behavior of perovskites, providing an in-depth analysis of the underlying mechanisms and their potential for improving device performance. The review covers the fundamental aspects of charge transport, polarization, and magnetic interactions in perovskite structures including the impact of crystal symmetry, ion migration, and external stimuli on their properties. Moreover, it highlights the various strategies used to tailor these properties through compositional engineering, doping, and structural modifications, resulting in enhanced efficiency, stability, and multifunctionality in applications such as photovoltaics, capacitors, dielectric resonators, and spintronic devices. Additionally, the paper addresses the challenges associated with the practical implementation of perovskite materials including stability issues under harsh environmental conditions and scalability for industrial applications. The review concludes with an outlook on future directions, emphasizing the need for further research to overcome these challenges and unlock the full potential of perovskite materials in next-generation electronics, energy storage, and magnetic devices.

Spintronics, an interdisciplinary field merging magnetism and electronics, has attracted considerable interest due to its potential to transform data storage, logic devices, and emerging quantum technologies. Among the materials explored for spintronic applications, metal oxide nanostructures synthesized via sol–gel methods offer a unique combination of low-cost processing, structural tunability, and defect-mediated magnetic control. This comprehensive review presents a critical overview of recent advances in sol–gel-derived magnetic oxides, such as Co-doped ZnO, La_1−xSr_xMnO₃, Fe₃O₄, NiFe₂O₄, and transition-metal-doped TiO₂, with emphasis on synthesis strategies, the dopant distribution, and room-temperature ferromagnetic behavior. Key spintronic functionalities, including magnetoresistance, spin polarization, and magnetodielectric effects, are systematically examined. Importantly, this review differentiates itself from the prior literature by explicitly connecting sol–gel chemistry parameters to spin-dependent properties and by offering a comparative analysis of multiple oxide systems. Critical challenges such as phase purity, reproducibility, and defect control are also addressed. This paper concludes by outlining future research directions, including green synthesis, the integration with 2D materials, and machine-learning-assisted optimization. Overall, this work bridges sol–gel synthesis and spintronic material design, offering a roadmap for advancing next-generation oxide-based spintronic devices.