Optical resonators with high quality factors ($Q$s) are promising for a variety of applications due to the enhanced nonlinearity and increased photonic density of states at resonances. In particular, frequency combs (FCs) can be generated through four-wave mixing in high-$Q$ microresonators made from Kerr nonlinear materials such as silica, silicon nitride, magnesium fluoride, and calcium fluoride. These devices have potential for on-chip frequency metrology and high-resolution spectroscopy, high-bandwidth radiofrequency information processing, and high-data-rate telecommunications. Silicon nitride microresonators are attractive due to their compatibility with integrated circuit manufacturing; they can be cladded with silica for long-term stable yet tunable operation, and allow multiple resonators to be coupled together to achieve novel functionalities. Despite previous demonstrations of high-$Q$ silicon nitride resonators, FC generation using silicon nitride microresonator chips still requires pump power significantly higher than those in whispering gallery mode resonators made from silica, magnesium, and calcium fluorides, which all have shown resonator $Q$s between 0.1 and 100 billion. Here, we report on a fabrication procedure that leads to the demonstration of “finger-shaped” ${\mathrm{Si}}_3{\mathrm{N}}_4$ microresonators with intrinsic $Q$s up to 17 million at a free spectrum range (FSR) of 24.7 GHz that are suitable for telecommunication and microwave photonics applications. The frequency comb onset power can be as low as 2.36 mW and broad, single FSR combs can be generated at a low pump power of 24 mW, both within reach of on-chip semiconductor lasers. Our demonstration is an important step toward a fully integrated on-chip FC source.

Kerr nonlinearity-based frequency combs and solitons have been generated from on-chip microresonators. The initiation of the combs requires global or local anomalous dispersion which leads to many limitations, such as material choice, film thickness, and spectral ranges where combs can be generated, as well as fabrication challenges. Using a concentric racetrack-shaped resonator, we show that such constraints can be lifted and resonator dispersion can be engineered to be anomalous over moderately broad bandwidth. We demonstrate anomalous dispersion in a 300 nm thick silicon nitride film, suitable for semiconductor manufacturing but previously thought to result in waveguides with high normal dispersion. Together with a mode-selective, tapered coupling scheme, we generate coherent mode-locked frequency combs. Our method can realize anomalous dispersion for resonators at almost any wavelength and simultaneously achieve material and process compatibility with semiconductor manufacturing.

Ultra-compact, densely integrated optical components manufactured on a CMOS-foundry platform are highly desirable for optical information processing and electronic-photonic co-integration. However, the large spatial extent of evanescent waves arising from nanoscale confinement, ubiquitous in silicon photonic devices, causes significant cross-talk and scattering loss. Here, we demonstrate that anisotropic all-dielectric metamaterials open a new degree of freedom in total internal reflection to shorten the decay length of evanescent waves. We experimentally show the reduction of cross-talk by greater than 30 times and the bending loss by greater than 3 times in densely integrated, ultra-compact photonic circuit blocks. Our prototype all-dielectric metamaterial-waveguide achieves a low propagation loss of approximately 3.7±1.0 dB/cm, comparable to those of silicon strip waveguides. Our approach marks a departure from interference-based confinement as in photonic crystals or slot waveguides, which utilize nanoscale field enhancement. Its ability to suppress evanescent waves without substantially increasing the propagation loss shall pave the way for all-dielectric metamaterial-based dense integration.

Devices based on spectroscopy of atomic vapors can measure physical quantities such as magnetic fields, RF electric fields, time and length, and rotation and have applications in a broad range of fields including communications, medicine, and navigation. We present a type of photonic device that interfaces single-mode silicon nitride optical waveguides with warm atomic vapors, enabling precision spectroscopy in an extremely compact ($<1{\mathrm{cm}}^3$) package. We perform precision spectroscopy of rubidium confined in a micro-machined, $27{\mathrm{mm}}^3$ volume, vapor cell using a collimated free-space 120 μm diameter laser beam derived directly from a single-mode silicon nitride waveguide. With this optical-fiber integrated photonic spectrometer, we demonstrate an optical frequency reference at 780 nm with a stability of ${10}^{-11}$ from 1 to ${10}^4\mathrm{s}$. This device harnesses the benefits of both photonic integration and precision spectroscopy for the next generation of quantum sensors and devices based on atomic vapors.

Integration of photonic chips with millimeter-scale atomic, micromechanical, chemical, and biological systems can advance science and enable new miniaturized hybrid devices and technology. Optical interaction via small evanescent volumes restricts performance in applications such as gas spectroscopy, and a general ability to photonically access optical fields in large free-space volumes is desired. However, conventional inverse tapers and grating couplers do not directly scale to create wide, high-quality collimated beams for low-loss diffraction-free propagation over many millimeters in free space, necessitating additional bulky collimating optics and expensive alignment. Here, we develop an extreme mode converter, which is a compact planar photonic structure that efficiently couples a 300 nm × 250 nm silicon nitride high-index single-mode waveguide to a well-collimated near surface-normal Gaussian beam with an ≈160 µm waist, which corresponds to an increase in the modal area by a factor of >10⁵. The beam quality is thoroughly characterized, and propagation over 4 mm in free space and coupling back into a single-mode photonic waveguide with low loss via a separate identical mode converter is demonstrated. To achieve low phase error over a beam area that is >100× larger than that of a typical grating coupler, our approach separates the two-dimensional mode expansion into two sequential separately optimized stages, which create a fully expanded and well-collimated Gaussian slab mode before out-coupling it into free space. Developed at 780 nm for integration with chip-scale atomic vapor cell cavities, our design can be adapted for visible, telecommunication, or other wavelengths. The technique can be expanded to more arbitrary phase and intensity control of both large-diameter, free-space optical beams and wide photonic slab modes.

Electromagnetic coupling is ubiquitous in photonic systems and transfers optical signals from one device to the other, creating crosstalk between devices. While this allows the functionality of some photonic components such as couplers, it limits the integration density of photonic chips, and many approaches have been proposed to reduce the crosstalk. However, due to the wave nature of light, complete elimination of crosstalk between closely spaced, identical waveguides is believed to be impossible and has not been observed experimentally. Here we show an exceptional coupling that can completely suppresses the crosstalk utilizing highly anisotropic photonic metamaterials. The anisotropic dielectric perturbations in the metamaterial mutually cancel the couplings from different field components, resulting in an infinitely long coupling length. We demonstrate the extreme suppression of crosstalk via exceptional coupling on a silicon-on-insulator platform, which is compatible with a complementary metal-oxide-semiconductor process. The idea of exceptional coupling with anisotropic metamaterials can be applied to many other electromagnetic devices, and it could drastically increase the integration density of photonic chips.