Single indistinguishable photons at telecom C-band wavelengths are essential for quantum networks and the future quantum internet. However, high-throughput technology for single-photon generation at 1550 nm remained a missing building block to overcome present limitations in quantum communication and information technologies. Here, we demonstrate the high-throughput fabrication of quantum-photonic integrated devices operating at C-band wavelengths based on epitaxial semiconductor quantum dots. Our technique enables the deterministic integration of single pre-selected quantum emitters into microcavities based on circular Bragg gratings. Respective devices feature the triggered generation of single photons with ultra-high purity and record-high photon indistinguishability. Further improvements in yield and coherence properties will pave the way for implementing single-photon non-linear devices and advanced quantum networks at telecom wavelengths.
The authors demonstrate pure triggered single‐photon emission from quantum dots (QDs) around the telecommunication C‐band window, with characteristics preserved under non‐resonant excitation at saturation, that is, the highest possible, lifetime‐limited emission rates. The direct measurement of emission dynamics reveals photoluminescence decay times in the range of (1.7–1.8) ns corresponding to maximal photon generation rates exceeding 0.5 GHz. The measurements of the second‐order correlation function exhibit, for the best case, a lack of coincidences at zero time delay—no multiple photon events are registered within the experimental accuracy. This is achieved by exploiting a new class of low‐density and in‐plane symmetric InAs/InP QDs grown by molecular beam epitaxy on a distributed Bragg reflector, perfectly suitable for non‐classical light generation for quantum optics experiments and quantum‐secured fiber‐based optical communication schemes.
Semiconductor quantum dots (QDs) enable the generation of single and entangled photons, which are useful for various applications in photonic quantum technologies. Specifically for quantum communication via fiber-optical networks, operation in the telecom C-band centered around 1550 nm is ideal. The direct generation of QD-photons in this spectral range with high quantum-optical quality, however, remained challenging. Here, we demonstrate the coherent on-demand generation of indistinguishable photons in the telecom C-band from single QD devices consisting of InAs/InP QD-mesa structures heterogeneously integrated with a metallic reflector on a silicon wafer. Using pulsed two-photon resonant excitation of the biexciton-exciton radiative cascade, we observe Rabi rotations up to pulse areas of 4π and a high single-photon purity in terms of g(2)(0) = 0.005(1) and 0.015(1) for exciton and biexciton photons, respectively. Applying two independent experimental methods, based on fitting Rabi rotations in the emission intensity and performing photon cross-correlation measurements, we consistently obtain preparation fidelities at the π-pulse exceeding 80%. Finally, performing Hong-Ou-Mandel-type two-photon interference experiments, we obtain a photon-indistinguishability of the full photon wave packet of up to 35(3)%, representing a significant advancement in the photon-indistinguishability of single photons emitted directly in the telecom C-band.
A user‐friendly, fiber‐coupled, single‐photon source operating at telecom wavelengths is a key component of photonic quantum networks providing long‐haul, ultra‐secure data exchange. To take full advantage of quantum‐mechanical data protection and to maximize the transmission rate and distance, a true quantum source providing single photons on demand is highly desirable. This great challenge is tackled by developing a ready‐to‐use semiconductor quantum‐dot‐based device that launches single photons at a wavelength of 1.3 µm directly into a single‐mode optical fiber. In the proposed approach, the quantum dot is deterministically integrated into a nanophotonic structure to ensure efficient on‐chip coupling into a fiber. The whole arrangement is integrated into a 19ʺ compatible housing to enable stand‐alone operation by cooling via a compact Stirling cryocooler. The realized source delivers single photons with a multiphoton events probability as low as 0.15 and a single‐photon emission rate of up to 73 kHz into a standard telecom single‐mode fiber.
Deterministic solid state quantum light sources are considered key building blocks for future communication networks. While several proof-of-principle experiments of quantum communication using such sources have been realized, most of them required large setups—often involving liquid helium infrastructure or bulky closed-cycle cryotechnology. In this work, we report on the first quantum key distribution (QKD) testbed using a compact benchtop quantum dot single-photon source operating at telecom wavelengths. The plug&play device emits single-photon pulses at O-band wavelengths (1321 nm) and is based on a directly fiber-pigtailed deterministically fabricated quantum dot device integrated into a compact Stirling cryocooler. The Stirling is housed in a 19 in. rack module including all accessories required for stand-alone operation. Implemented in a simple QKD testbed emulating the BB84 protocol with polarization coding, we achieve an multiphoton suppression of and a raw key rate of up to kHz using an external pump laser. In this setting, we further evaluate the performance of our source in terms of the quantum bit error ratios, secure key rates, and tolerable losses expected in full implementations of QKD while accounting for finite key size effects. Furthermore, we investigate the optimal settings for a two-dimensional temporal acceptance window applied on the receiver side, resulting in predicted tolerable losses up to 23.19 dB. Not least, we compare our results with previous proof-of-concept QKD experiments using quantum dot single-photon sources. Our study represents an important step forward in the development of fiber-based quantum-secured communication networks exploiting sub-Poissonian quantum light sources.
Whereas the Si photonic platform is highly attractive for scalable optical quantum information processing, it lacks practical solutions for efficient photon generation. Self-assembled semiconductor quantum dots (QDs) efficiently emit photons in the telecom bands (1460-1625 nm) and allow for heterogeneous integration with Si. In this work, we report on a novel, robust, and industry-compatible approach for achieving single-photon emission from InAs/InP QDs heterogeneously integrated with a Si substrate. As a proof of concept, we demonstrate a simple vertical emitting device, employing a metallic mirror beneath the QD emitter, and experimentally obtained photon extraction efficiencies of ∼10%. Nevertheless, the figures of merit of our structures are comparable with values previously only achieved for QDs emitting at shorter wavelength or by applying technically demanding fabrication processes. Our architecture and the simple fabrication procedure allows for the demonstration of high-purity single-photon generation with a second-order correlation function at zero time delay, g(2)(τ = 0) < 0.02, without any corrections at continuous wave excitation at the liquid helium temperature and preserved up to 50 K. For pulsed excitation, we achieve the as-measured g(2)(0) down to 0.205 ± 0.020 (0.114 ± 0.020 with background coincidences subtracted).