In this study, a fabrication method of tapered microstructures with high aspect ratio was proposed by deep X-ray lithography. Tapered microstructures with several hundred micrometers and high aspect ratio are demanded owing to the high applicability in the fields of various microelectromechanical systems (MEMS) such as optical components and microfluidic channels. However, as the pattern and gap size were downsized to smaller micro-scale with higher aspect ratio over 5, microstructures were easily deformed or clustered together due to capillary force during the drying process. Here, we describe a novel manufacturing process of tapered microstructures with high aspect ratio. To selectively block the deep X-ray irradiation, an X-ray mask was prepared via conventional ultraviolet (UV) lithography. A double X-ray exposure process with and without X-ray mask was applied to impose a two-step dose distribution on a photoresist. For the clear removal of the exposed region, the product was developed in the downward direction, which encourages a gravity-induced pulling force as well as a convective transport of the developer. After a drying process with the surface additive, tapered microstructures were successfully fabricated with a pattern size of 130 μm, gap size of 40 μm, and aspect ratio over 7.

Microwave absorbers using conductive ink are generally fabricated by printing an array pattern on a substrate to generate electromagnetic fields. However, screen printing processes are difficult to vary the sheet resistance values for different regions of the pattern on the same layer, because the printing process deposits materials at the same height over the entire surface of substrate. In this study, a promising manufacturing process was suggested for engraved resistive double square loop arrays with ultra-wide bandwidth microwave. The developed manufacturing process consists of a micro-end-milling, inking, and planing processes. A 144-number of double square loop array was precisely machined on a polymethyl methacrylate workpiece with the micro-end-milling process. After engraving array structures, the machined surface was completely covered with the developed conductive carbon ink with a sheet resistance of 15 Ω/sq. It was cured at room temperature. Excluding the ink that filled the machined double square loop array, overflowed ink was removed with the planing process to achieve full filled and isolated resistive array patterns. The fabricated microwave absorber showed a small radar cross-section with reflectance less than − 10 dB in the frequency band range of 8.0–14.6 GHz.

In this study, two kinds of copper micro-patterned surfaces with different heights were fabricated by using a powder injection molding (PIM) process. The micro-pattern’s size was 100 μm, and the gap size was 50 μm. The short micro-pattern’s height was 100 μm, and the height of the tall one was 380 μm. A copper powder and wax-polymer-based binder system was used to fabricate the micro-patterned surfaces. The critical heat flux (CHF) and heat transfer coefficient (HTC) during pool-boiling tests were measured with the micro-patterned surfaces and a reference plain copper surface. The CHF of short and tall micro-patterned surfaces were 1434 and 1444 kW/m², respectively, and the plain copper surface’s CHF was 1191 kW/m². The HTC of the plain copper surface and the PIM surface with short and tall micro-patterned surfaces were similar in value up to a heat flux 1000 kW/m². Beyond that value, the plain surface quickly reached its CHF, while the HTC of the short micro-patterned surface achieved higher values than that of the tall micro-patterned surface. At CHF, the maximum values of HTC for the short micro-pattern, tall micro-pattern, and the plain copper surface were 68, 58, and 57 kW/m² K.