Xiangchao Zhang

Prof. Xiangchao Zhang

Fudan University
orcid

Research Focus & Metrics

Academic Career Length

19Years (2008-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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13 January 2016 in RSC Advances
Verified
Journal Article
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BPBo Peng
Bo Peng
Hao ZhangHao Zhang
Hao Zhang
HSHezhu Shao
Hezhu Shao
YXYuchen Xu
Yuchen Xu
Xiangchao ZhangXiangchao Zhang
Xiangchao Zhang
HZHeyuan Zhu
Heyuan Zhu
Our work shows that the thermal conductivityκof MoS2is largest among the three materials (Fig. a and b) due to largest Debye temperature. WS2has stronger bonding (Fig. e) and lower anharmonicity (Fig. h), leading to a much largerκcompared to MoSe2.

3 February 2016 in Scientific Reports
Verified
Journal Article
Open access
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BPBo Peng
Bo Peng
Hao ZhangHao Zhang
Hao Zhang
HSHezhu Shao
Hezhu Shao
YXYuchen Xu
Yuchen Xu
Xiangchao ZhangXiangchao Zhang
Xiangchao Zhang
HZHeyuan Zhu
Heyuan Zhu
A fundamental understanding of phonon transport in stanene is crucial to predict the thermal performance in potential stanene-based devices. By combining first-principle calculation and phonon Boltzmann transport equation, we obtain the lattice thermal conductivity of stanene. A much lower thermal conductivity (11.6 W/mK) is observed in stanene, which indicates higher thermoelectric efficiency over other 2D materials. The contributions of acoustic and optical phonons to the lattice thermal conductivity are evaluated. Detailed analysis of phase space for three-phonon processes shows that phonon scattering channels LA + LA/TA/ZA ↔ TA/ZA are restricted, leading to the dominant contributions of high-group-velocity LA phonons to the thermal conductivity. The size dependence of thermal conductivity is investigated as well for the purpose of the design of thermoelectric nanostructures.

16 March 2016 in Annalen der Physik
Verified
Journal Article
Closed access
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BPBo Peng
Bo Peng
Hao ZhangHao Zhang
Hao Zhang
HSHezhu Shao
Hezhu Shao
YXYuanfeng Xu
Yuanfeng Xu
Xiangchao ZhangXiangchao Zhang
Xiangchao Zhang
HZHeyuan Zhu
Heyuan Zhu

27 February 2019 in Optics Express
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Journal Article
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XXXueyang Xu
Xueyang Xu
Xiangchao ZhangXiangchao Zhang
Xiangchao Zhang
ZNZhenqi Niu
Zhenqi Niu
WWWei Wang
Wei Wang
YZYifan Zhu
Yifan Zhu
MXMin Xu
Min Xu
Accurate in situ measurement of complex optical surfaces is desired for precision manufacturing, and deflectometry is a promising measuring method. However, deflectometry’s measurement accuracy depends heavily on the geometric calibration’s reliability. Existing calibration methods suffer from the limitations of low efficiency, complicated operations, and expensive equipment. Therefore, a self-calibration method is proposed for the monoscopic deflectometry in order to determine the the camera and screen positions. A flat mirror without markers, rather than high-precision metrological instruments, is employed to assist with the self-calibration work, and a re-projection model is adopted in order to trace the rays from the screen to the camera. Numerical optimization is performed on the global parameters—including the camera intrinsic parameters, the screen intrinsic parameters, and the geometric transformations—in order to improve the geometric calibration’s reliability. This self-calibration method only requires that four images be captured, hereby reducing the operating complexity and improving the measuring efficiency. Experiments demonstrate that the re-projection error can be significantly decreased, and also that the measuring accuracy of specular surfaces is comparable to high-precision interferometry.

1 January 2018 in Precision Engineering
Verified
Journal Article
Closed access
SWSonglin Wan
Songlin Wan
Xiangchao ZhangXiangchao Zhang
Xiangchao Zhang
HZHao Zhang
Hao Zhang
MXMin Xu
Min Xu
XJXiangqian Jiang
Xiangqian Jiang

28 September 2017 in RSC Advances
Verified
Journal Article
Open access
PDF file
YXYuanfeng Xu
Yuanfeng Xu
ZNZeyu Ning
Zeyu Ning
Hao ZhangHao Zhang
Hao Zhang
GNGang Ni
Gang Ni
HSHezhu Shao
Hezhu Shao
HZHeyuan Zhu
Heyuan Zhu
At room temperature, the uniaxial strain ( ε x = −8%) can enhance the hole mobility of monolayer penta-SiC2 along the b -direction by almost three orders of magnitude up to 1.14 × 10 6 cm 2 V −1 s −1 , which is much larger than that of graphene.