This paper first presents a switchable photonic nanojet (PNJ) generated by a polystyrene (PS) microsphere immersed in nematic liquid crystals (NLCs). The PNJ is switched by applying external voltage, which originates from the refractive index change in the surrounding medium caused by the field-induced realignment of liquid crystal molecules. By tuning the refractive index of NLCs larger or smaller than that of the PS microsphere, the PNJ can be switched off or on. Moreover, we present an optimization study to seek a better electric energy focusing property of the PNJ. Our results reveal that the switchability of PNJ can be optimized by applying a shorter incident wavelength, a double-layer microsphere, and a PS ellipsoid. The full width at half-maximum (FWHM) generated by the PS ellipsoid is narrower than that generated by the microsphere with a shorter incident wavelength. The intensity contrast of the PS ellipsoid is higher than that of the double-layer microsphere. As a whole, the switchability of PNJ can be best optimized by a PS ellipsoid. This should open the way for the development of integrated photonic devices.

Polarization splitter–rotators (PSRs) are an essential component in on-chip polarization-sensitive and polarization–division multiplexing systems. In this work, we propose an ultracompact and high-performance silicon-based polarization splitter–rotator utilizing anisotropic metasurfaces, which is the first to combine the two, to our knowledge. The tilted periodic metasurface structure has different modulation effects on different polarized light fields, such as the transverse–electric (TE) mode and the transverse–magnetic (TM) mode, which are beneficial for designing polarization management devices. According to the results, the entire length of the silicon PSR was ~13.5 μm. The TE-to-TM conversion loss and polarization conversion ratio ere −0.154 dB and 96.5% at 1.55 μm, respectively. In the meanwhile, the cross talk and reflection loss were −27.0 dB and −37.3 dB, when the fundamental TE mode was input. The insertion loss and cross talk were −0.19 dB and −25.01 dB at the central wavelength when the fundamental TM mode was input. In addition, the bandwidth reached up to ~112 nm with polarization conversion loss and insertion loss higher than −0.46 dB and −0.36 dB. The simulations also show that the designed devices had good fabrication tolerance.