Ki Seok Kim

Dr. Ki Seok Kim

Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA

Research Focus & Metrics

Academic Career Length

26Years (2001-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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10 December 2013 in Physical Review Letters
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Journal Article
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HKHeon-Jung Kim
Heon-Jung Kim
KKKi Seok Kim
Ki Seok Kim
JWJ.-F. Wang
J.-F. Wang
MSM. Sasaki
M. Sasaki
NSN. Satoh
N. Satoh
LLL. Li
L. Li
Dirac metals (gapless semiconductors) are believed to turn into Weyl metals when perturbations, which break either time reversal symmetry or inversion symmetry, are employed. However, no experimental evidence has been reported for the existence of Weyl fermions in three dimensions. Applying magnetic fields near the topological phase transition from a topological insulator to a band insulator in Bi1−xSbx we observe not only the weak antilocalization phenomenon in magnetoconductivity near zero magnetic fields (B<0.4  T), but also its upturn above 0.4 T only for E//B. This “incompatible” coexistence between weak antilocalization and “negative” magnetoresistivity is attributed to the Adler-Bell-Jackiw anomaly (“topological” E·B term) in the presence of weak antilocalization corrections.

1 July 2024 in Nature Nanotechnology
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KKKi Seok Kim
Ki Seok Kim
JKJunyoung Kwon
Junyoung Kwon
HRHuije Ryu
Huije Ryu
CKChanghyun Kim
Changhyun Kim
HKHyunseok Kim
Hyunseok Kim
JKJeehwan Kim
Jeehwan Kim

22 January 2016 in Nature Communications
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Journal Article
Open access
DCDoohee Cho
Doohee Cho
SCSangmo Cheon
Sangmo Cheon
KKKi Seok Kim
Ki Seok Kim
SLSung-Hoon Lee
Sung-Hoon Lee
YCYong-Heum Cho
Yong-Heum Cho
HYHan Woong Yeom
Han Woong Yeom
The controllability over strongly correlated electronic states promises unique electronic devices. A recent example is an optically induced ultrafast switching device based on the transition between the correlated Mott insulating state and a metallic state of a transition metal dichalcogenide 1T-TaS2. However, the electronic switching has been challenging and the nature of the transition has been veiled. Here we demonstrate the nanoscale electronic manipulation of the Mott state of 1T-TaS2. The voltage pulse from a scanning tunnelling microscope switches the insulating phase locally into a metallic phase with irregularly textured domain walls in the charge density wave order inherent to this Mott state. The metallic state is revealed as a correlated phase, which is induced by the moderate reduction of electron correlation due to the charge density wave decoherence.

31 July 2018 in Nano Letters
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Journal Article
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GDGanbat Duvjir
Ganbat Duvjir
BCByoung Ki Choi
Byoung Ki Choi
IJIksu Jang
Iksu Jang
SUSøren Ulstrup
Søren Ulstrup
SKSoonmin Kang
Soonmin Kang
YCYoung Jun Chang
Young Jun Chang

27 November 2023 in Nature Materials
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JKJi-Hoon Kang
Ji-Hoon Kang
HSHeechang Shin
Heechang Shin
KKKi Seok Kim
Ki Seok Kim
MSMin-Kyu Song
Min-Kyu Song
DLDoyoon Lee
Doyoon Lee
SBSang-Hoon Bae
Sang-Hoon Bae

30 May 2017 in RSC Advances
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ESEric Singh
Eric Singh
KKKi Seok Kim
Ki Seok Kim
GYGeun Young Yeom
Geun Young Yeom
HNHari Singh Nalwa
Hari Singh Nalwa
Dye-sensitized solar cells (DSSCs) are gaining considerable interest as alternatives to semiconductor-based thin film solar cells. The noble metal platinum (Pt) is conventionally used as a counter electrode (CE) material for fabricating DSSCs, since Pt is expensive and scarce, therefore, new materials have been explored to develop cost-effective Pt-free counter electrodes. Two-dimensional (2D) graphene-based counter electrodes have achieved the highest power conversion efficiency (PCE, η) of 13%, which has stimulated research activities in 2D layered transition metal dichalcogenides (TMDs) for developing Pt-free DSSCs. In this review, progress made on alternative counter electrodes for fabricating low-cost Pt-free DSSCs, based on earth-abundant 2D TMDs including MoS2, WS2, TiS2, FeS2, CoS2, NiS2, SnS2, MoSe2, NbSe2, TaSe2, NiSe2, FeSe2, CoSe2, Bi2Se3 and their based composites, are discussed and summarized. Also, the considerable progress made on thin films of MoS2 and MoS2 based carbon, graphene, carbon nanotubes (CNTs), carbon nanofibers (CNFs), and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) composites as efficient counter electrodes (CEs) for DSSCs are discussed, in terms of their electrochemical and photovoltaic properties. At present, PCE values higher than that of standard Pt CE have been recorded for a number of TMD-based CEs, which include MoS2 and MoSe2/thin films deposited on Mo foil, MoS2/CNTs, MoS2/graphene, MoS2/carbon, MoSe2/PEDOT:PSS, NbSe2, FeS2, FeSe2 nanosheets, TiS2/graphene, and NiS2/graphene hybrid systems in DSSCs, for the reduction of triiodide (I3 −) to iodide (I−). The highest PCE (η = 10.46%) versus Pt CE (η = 8.25%) at 1 Sun (100 mW cm−2, AM 1.5G) was measured for DSSCs having a low cost and flexible CoSe2/carbon-nanoclimbing wall counter electrode deposited on a nickel foam. Though TMD-based materials show great potential for solar cell devices, their long-term stability is equally important. The DSSCs with a TiS2/graphene hybrid, and TiS2/PEDOT:PSS composite CEs, showed stability up to 20 to 30 days, respectively, without any measurable degradation in the photovoltaic performance. The long-term stability of TMDs-based DSSCs under different environmental conditions is also described in view of their commercial applications.