Yuki Fujio

Dr. Yuki Fujio

Sensing System Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Saga 841-0052, Japan
orcid

Research Focus & Metrics

Academic Career Length

19Years (2008-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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20 November 2015 in Light: Science & Applications
Verified
Journal Article
Open access
DTDong Tu
Dong Tu
CXChaonan Xu
Chaonan Xu
Yuki FujioYuki Fujio
Yuki Fujio
AYAkihito Yoshida
Akihito Yoshida
This article reports a new phosphorescent material, CaZnOS:Cu, that exhibits two types of mechano-optical conversion: mechanical quenching and mechanoluminescence. An intense mechanical quenching of phosphorescence corresponding to mechanical stimuli can be achieved in CaZnOS:Cu within a short decay time period. Over time, it gradually changes to mechanoluminescence when a mechanical load is applied. We propose that the mechanical quenching and mechanoluminescence arise from the different roles of shallow and deep traps in CaZnOS:Cu. CaZnOS:Cu has promising applications in monitoring mechanical stress in industrial plants, structures, and living bodies.

1 January 2016 in International Journal of Hydrogen Energy
Verified
Journal Article
Closed access
Yuki FujioYuki Fujio
Yuki Fujio
CXChaonan Xu
Chaonan Xu
YTYujin Terasawa
Yujin Terasawa
YSYoshitaro Sakata
Yoshitaro Sakata
JYJunichiro Yamabe
Junichiro Yamabe
YMYukitaka Murakami
Yukitaka Murakami

1 October 2009 in Electrochimica Acta
Verified
Journal Article
Closed access
VPVladimir V. Plashnitsa
Vladimir V. Plashnitsa
PEPerumal Elumalai
Perumal Elumalai
Yuki FujioYuki Fujio
Yuki Fujio
NMNorio Miura
Norio Miura

11 September 2017 in Applied Physics Letters
Verified
Journal Article
Closed access
PDF file
MUMasato Uehara
Masato Uehara
HSHokuto Shigemoto
Hokuto Shigemoto
Yuki FujioYuki Fujio
Yuki Fujio
TNToshimi Nagase
Toshimi Nagase
YAYasuhiro Aida
Yasuhiro Aida
MAMorito Akiyama
Morito Akiyama
Aluminum nitride (AlN) is one of piezoelectric materials, which are eagerly anticipated for use in microelectromechanical systems (MEMS) applications such as communication resonators, sensors, and energy harvesters. AlN is particularly excellent in generated voltage characteristics for the MEMS rather than oxide piezoelectric materials such as lead zirconium titanate Pb(Zr, Ti)O3. However, it is necessary to improve the piezoelectric properties of AlN in order to advance the performance of the MEMS. We dramatically increased the piezoelectric coefficient d33 of AlN films by simultaneously adding magnesium (Mg) and niobium (Nb). The d33 of Mg39.3Nb25.0Al35.7N is 22 pC/N, which is about four times that of AlN. The d33 is increased by Mg and Nb simultaneous addition, and is not increased by Mg or Nb single addition. Interestingly, the Nb has multiple chemical states, and which are influenced by the Mg concentration.

1 January 2008 in Electrochemical and Solid-State Letters
Verified
Journal Article
Closed access
PDF file
PEPerumal Elumalai
Perumal Elumalai
VPVladimir V. Plashnitsa
Vladimir V. Plashnitsa
Yuki FujioYuki Fujio
Yuki Fujio
NMNorio Miura
Norio Miura
A planar mixed-potential-type sensor using a yttria-stabilized zirconia and oxide-based sensing electrode (SE) was fabricated and the preliminary results on sensing characteristics were reported here. It was found that the sensor attached with exhibited good sensitivity and excellent selectivity to at under the wet condition ( ). While the cross sensitivities to the other examined gases were about or negligible, the sensitivity to was about . The of the sensor varied almost linearly with the concentration in the examined range of .

29 January 2010 in Sensors and Actuators B: Chemical
Verified
Journal Article
Closed access
PEPerumal Elumalai
Perumal Elumalai
VPVladimir V. Plashnitsa
Vladimir V. Plashnitsa
Yuki FujioYuki Fujio
Yuki Fujio
NMNorio Miura
Norio Miura