Snezana Djoric-Veljkovic

Prof. Snezana Djoric-Veljkovic

Department of Mathematics, Physics and Informatics, Faculty of Civil Engineering and Architecture, University of Niš, Niš, Serbia
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Research Focus & Metrics

Academic Career Length

33Years (1994-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 September 2005 in Microelectronics Reliability
Verified
Journal Article
Closed access
NSN. Stojadinović
N. Stojadinović
DDD. Danković
D. Danković
Snezana Djoric-VeljkovicSnezana Djoric-Veljkovic
Snezana Djoric-Veljkovic
VDV. Davidović
V. Davidović
IMI. Manić
I. Manić
SGS. Golubović
S. Golubović

1 July 2014 in Energy and Buildings
Verified
Journal Article
Closed access
AJA. Jovanović
A. Jovanović
PPP. Pejić
P. Pejić
Snezana Djoric-VeljkovicSnezana Djoric-Veljkovic
Snezana Djoric-Veljkovic
JKJ. Karamarković
J. Karamarković
MDM. Djelić
M. Djelić

1 March 1995 in Microelectronics Reliability
Verified
Journal Article
Closed access
NSN. Stojadinović
N. Stojadinović
SGS. Golubović
S. Golubović
Snezana Djoric-VeljkovicSnezana Djoric-Veljkovic
Snezana Djoric-Veljkovic
Sima DimitrijevSima Dimitrijev
Sima Dimitrijev

1 September 2001 in Microelectronics Reliability
Verified
Journal Article
Closed access
NSN. Stojadinovic
N. Stojadinovic
IMI. Manic
I. Manic
Snezana Djoric-VeljkovicSnezana Djoric-Veljkovic
Snezana Djoric-Veljkovic
VDV. Davidovic
V. Davidovic
SGS. Golubovic
S. Golubovic
Sima DimitrijevSima Dimitrijev
Sima Dimitrijev

1 September 2006 in Microelectronics Reliability
Verified
Journal Article
Closed access
DDD. Danković
D. Danković
IMI. Manić
I. Manić
Snezana Djoric-VeljkovicSnezana Djoric-Veljkovic
Snezana Djoric-Veljkovic
VDV. Davidović
V. Davidović
SGS. Golubović
S. Golubović
NSN. Stojadinović
N. Stojadinović

20 April 2016 in IEEE Transactions on Nuclear Science
Verified
Journal Article
Closed access
VDVojkan Davidovic
Vojkan Davidovic
DDDanijel Dankovic
Danijel Dankovic
AIAleksandar Ilic
Aleksandar Ilic
IMIvica Manic
Ivica Manic
SGSnezana Golubovic
Snezana Golubovic
NSNinoslav Stojadinovic
Ninoslav Stojadinovic
In this paper, we report the results of consecutive irradiation and negative bias temperature (NBT) stress experiments performed on p-channel power vertical double-diffused metal-oxide semiconductor transistors. The purpose is to examine the effects of a specific kind of stress in devices previously subjected to the other kind of stress, as well as to assess if possible the behavior of devices subjected to simultaneous irradiation and NBT stressing. It is shown that irradiation of previously NBT stressed devices leads to a further increase of negative threshold voltage shift due to additional build-up of both oxide trapped charge and interface traps. NBT stress effects in previously irradiated devices may, however, depend on gate bias applied during irradiation and on the total dose received: in the cases of low-dose irradiation or irradiation without gate bias, the subsequent NBT stress seems to lead to further device degradation, whereas in the cases of devices previously irradiated to high doses or with gate bias applied during irradiation, NBT stress seems to have a positive role since it practically anneals a part of radiation-induced degradation.