We report on comparative optical studies of InAs/Al_0.44Ga_0.56As quantum dots (QDs) grown by molecular beam epitaxy either with or without a thin GaAs interlayer inserted between the AlGaAs barrier and InAs QDs. Emission properties of individual QDs are investigated by micro-photoluminescence spectroscopy using 500-nm-size etched cylindric mesa structures. The single-photon statistics of the QDs of both types, emitting in the red spectral range between 636 and 750 nm, is confirmed by the measurements of the second-order correlation function. A negligibly small exciton fine structure splitting is detected in the majority of the QDs grown with the GaAs interlayer that implies the possibility of generating pairs of entangled photons with high entanglement fidelity.

We report on single photon emitters for the green-yellow spectral range, which comprise a CdSe/ZnSe quantum dot placed inside a semiconductor tapered nanocolumn acting as a multimode nanoantenna. Despite the presence of many optical modes inside, such a nanoantenna is able to collect the quantum dot radiation and ensure its effective output. We demonstrate periodic arrays of such emitters, which are fabricated by focused ion beam etching from a II-VI/III-V heterostructure grown using molecular beam epitaxy. With non-resonant optical pumping, the average count rate of emitted single photons exceeds 5 MHz with the second-order correlation function $g^{\left(2\right)}$(0) = 0.25 at 220 K. Such single photon emitters are promising for secure free space optical communication lines.

InSe is a promising material for next-generation two-dimensional electronic and optical devices, the characteristics of which are largely determined by the type of band structure, direct or indirect. In general, atomic force microscopy and optical methods can be sensitive to peculiarities of the electronic structure, leading to different results. In this work we will focus on the luminescent properties of few-layer $\beta$-InSe with a thickness of 6–75 monolayers (MLs). Low-temperature micro-photoluminescence ($\mu$-PL) studies show a sharp increase in PL intensity in the range of thicknesses from 16 to 20 monolayers, where, in addition, there is a singularity in the dependence of the work function on the thickness. Time-resolved photoluminescence spectroscopy reveals three characteristic PL decay times that differ from each other by about an order of magnitude. We associate the processes underlying the two faster decays with the recombination of electrons and holes between the band extrema, either directly or through the interband relaxation of holes. Their contributions to the total PL intensity increase significantly in the same thickness range, 16–20 MLs. On the contrary, the slowest contribution, which we attribute mainly to the defect-assisted recombination, prevails at a smaller number of monolayers and then noticeably decreases. These results indicate the indirect-to-direct band-gap transition near 16–20 MLs, which determines the range of applicability of few-layer $\beta$-InSe for efficient light emitters.

We measure low-temperature micro-photoluminescence spectra along a MoS ${}_2$ nanotube, which exhibit the peaks of the optical whispering gallery modes below the exciton resonance. The energy fluctuation and width of these peaks are determined by the changes of the nanotube wall thickness and propagation of the optical modes along the nanotube axis, respectively. We demonstrate the potential of the high-quality nanotubes for realization of the strong coupling between exciton and optical modes when the Rabi splitting can reach 400 meV. We show how the formation of exciton-polaritons in such structures will be manifested in the micro-photoluminescence spectra and analyze the conditions needed to realize that.