Jean-Claude De Jaeger was born in Lille, France, in1952. He received a third-cycle Doctorate degree and the a Doctorate in physics degree from the University of Lille, Villeneuve d’Ascq, France, in 1977 and 1985, respectively. In 1974, he joined the Active Components Group of the Centre Hyperfréquences et Semiconducteurs, University of Lille. From 1990 to 1999, he was the head of the Physical Simulation Devices Group, Institut d’Electronique et de Microélectronique du Nord (IEMN), University of Lille. He worked on physical modeling and analysis of III–V field-effect transistors for power applications and mixers. Since 1999, he has been the head of the Microwave Power Devices Research Group, IEMN. From 2002 to 2007, he was the deputy manager of Thales IEMN GaN Electronics Research, a common laboratory between the IEMN and the Alcatel-Thales III–V Lab, where he worked on wide bandgap semiconductors for microwave power applications. Since 1991, he has been a professor of electronics. He has authored or coauthored about 270 publications and communications. His current research and developed projects concern the simulation, design, fabrication, and measurement of microwave-power HEMTs based on GaAs, InP, and mainly GaN, working from3 to 94 GHz as well as devices based on wide bandgap semiconductors such asBN, AlN, and diamond.