Feng Liu

Prof. Dr. Feng Liu

College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou, China
orcid

Research Focus & Metrics

Academic Career Length

15Years (2012-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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16 July 2018 in Nature Nanotechnology
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Journal Article
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Feng LiuFeng Liu
Feng Liu
ABAlistair J. Brash
Alistair J. Brash
JOJohn O’hara
John O’hara
LMLuis M. P. P. Martins
Luis M. P. P. Martins
CPCatherine L. Phillips
Catherine L. Phillips
AFA. Mark Fox
A. Mark Fox

10 February 2013 in Nature Nanotechnology
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Journal Article
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CJC. Javaux
C. Javaux
BMBenoit Mahler
Benoit Mahler
BDB. Dubertret
B. Dubertret
ASA. Shabaev
A. Shabaev
ARAnna V. Rodina
Anna V. Rodina
JHJ-P. Hermier
J-P. Hermier

30 March 2015 in Physical Review Letters
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Journal Article
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JQJ. H. Quilter
J. H. Quilter
ABA. J. Brash
A. J. Brash
Feng LiuFeng Liu
Feng Liu
MGM. Glässl
M. Glässl
ABA. M. Barth
A. M. Barth
AFA. M. Fox
A. M. Fox
We demonstrate a new method to realize the population inversion of a single InGaAs/GaAs quantum dot excited by a laser pulse tuned within the neutral exciton phonon sideband. In contrast to the conventional method of inverting a two-level system by performing coherent Rabi oscillation, the inversion is achieved by rapid thermalization of the optically dressed states via incoherent phonon-assisted relaxation. A maximum exciton population of 0.67±0.06 is measured for a laser tuned 0.83 meV to higher energy. Furthermore, the phonon sideband is mapped using a two-color pump-probe technique, with its spectral form and magnitude in very good agreement with the result of path-integral calculations.

12 December 2013 in Scientific Reports
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DSD. Sercombe
D. Sercombe
SSS. Schwarz
S. Schwarz
OPO. Del Pozo-Zamudio
O. Del Pozo-Zamudio
Feng LiuFeng Liu
Feng Liu
BRB. J. Robinson
B. J. Robinson
ATA. I. Tartakovskii
A. I. Tartakovskii
Two-dimensional (2D) compounds provide unique building blocks for novel layered devices and hybrid photonic structures. However, large surface-to-volume ratio in thin films enhances the significance of surface interactions and charging effects requiring new understanding. Here we use micro-photoluminescence (PL) and ultrasonic force microscopy to explore the influence of the dielectric environment on optical properties of a few monolayer MoS2 films. PL spectra for MoS2 films deposited on SiO2 substrates are found to vary widely. This film-to-film variation is suppressed by additional capping of MoS2 with SiO2 and SixNy, improving mechanical coupling of MoS2 with surrounding dielectrics. We show that the observed PL non-uniformities are related to strong variation in the local electron charging of MoS2 films. In completely encapsulated films, negative charging is enhanced leading to uniform optical properties. Observed great sensitivity of optical characteristics of 2D films to surface interactions has important implications for optoelectronics applications of layered materials.

25 February 2014 in Nano Letters
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LBLouis Biadala
Louis Biadala
Feng LiuFeng Liu
Feng Liu
MTMickael D. Tessier
Mickael D. Tessier
DYDmitri R. Yakovlev
Dmitri R. Yakovlev
BDBenoit Dubertret
Benoit Dubertret
MBManfred Bayer
Manfred Bayer

8 July 2013 in Physical Review B
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Feng LiuFeng Liu
Feng Liu
LBLouis Biadala
Louis Biadala
ARAnna V. Rodina
Anna V. Rodina
DYDmitri R. Yakovlev
Dmitri R. Yakovlev
DDDaniel Dunker
Daniel Dunker
MBManfred Bayer
Manfred Bayer
The spin dynamics in chemically synthesized CdSe/CdS core/shell nanocrystals (NCs) are studied by polarization- and time-resolved photoluminescence (PL) techniques in high magnetic fields and at low temperatures. Analysis of the recombination dynamics shows that the emission of thin-shell NCs is contributed by neutral excitons, while for thick-shell NCs it is dominated by charged excitons (trions). The sign of the PL polarization unambiguously demonstrates that these trions are negatively charged. A theoretical model of the PL polarization in an ensemble of randomly oriented NCs describes well magnetic field and time dependences of the PL polarization degree and allows us to determine the hole g factor in CdSe/CdS NCs, gh=−0.54. From direct measurements of the spin relaxation rate dependences on magnetic field and temperature, we identify the mechanism of the negative trion spin relaxation as two-phonon-assisted Raman scattering between the hole spin sublevels mixed by the applied magnetic field.