A compensation method for nonlinear vibration of a silicon micro resonant sensor is proposed and evaluated to be effective through simulation and experimental analysis. Firstly, the parameter characterization model of the silicon micro resonant sensor is established, which presents significant nonlinearity because of the nonlinear vibration of the resonant beam. A verification circuit is devised to imitate the nonlinear behavior of the model by matching the simulation measurement error of the frequency offset produced by the circuit block with the theoretical counterparts obtained from the model. Secondly, the principle of measurement error compensation is studied, and the compensation method dealing with nonlinear characteristics of the resonant beam is proposed by introducing a compensation beam and corresponding differential operations. The measurement error, compensation rate, and measurement residual between the two scenarios that use single beam and double beams, respectively, are derived and are compared with their simulation and experimental counterparts. The results coincide with the predicted trend, which verifies the effectiveness of the compensation method.

In this study, a comb-type capacitive accelerometer based on a silicon carbide (SiC) microstructure is presented and investigated by the finite element method (FEM). It has the advantages of low weight, small volume, and low cross-coupling. Compared with silicon(111) accelerometers with the same structure, it has a higher natural frequency. When the accelerometer vibrates, its resistive force consists of two main components: a viscous damping and an elastic damping force. It was found that viscous damping dominates at low frequency, and elastic damping dominates at high frequency. The second-order linear system of the accelerometer was analyzed in the time-frequency domain, and its dynamic characteristics were best when the gap between the capacitive plates was 1.23 μm. The range of this accelerometer was 0–100 g, which is 1.64 times that of a silicon(111) accelerometer with the same structure. In addition, the accelerometer could work normally at temperatures of up to 1200 °C, which is much higher than the working temperatures of silicon devices. Therefore, the proposed accelerometer showed superior performance compared to conventional silicon-based sensors for inertial measurements.