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Two-dimensional (2D) noble transition-metal dichalcogenides (NTMDs) have drawn widespread attention due to the promising applications in electronics and optoelectronics. Here, we studied and measured the thermal transport properties of few-layer PtSe2 and PtS2 using an optothermal Raman technique. First, we obtained the temperature- and laser-correlative Raman spectra of PtS2 and PtSe2 with disparate thicknesses. It is found that with the temperature and laser power increase, the A1g and Eg modes of all specimens show red shifts. The thermal conductivity values can be extracted from these data, which are correlated with the first-order coefficients of study on the relationship between temperature and laser power. The resulting thermal conductivities are 85.6 ± 7.70 and 40.4 ± 4.67 W/(m·K) for 4 nm PtS2 and 4.5 nm PtSe2 at room temperature, respectively. The results of this work help in the design of thermal management NTMD-based devices.
Shiqi Yin; Weitao Zhang; Chaoyang Tan; Lijie Chen; Jiawang Chen; Gang Li; Hanlin Zhang; Yu Zhang; Weike Wang; Liang Li. Thermal Conductivity of Few-Layer PtS2 and PtSe2 Obtained from Optothermal Raman Spectroscopy. The Journal of Physical Chemistry C 2021, 1 .
AMA StyleShiqi Yin, Weitao Zhang, Chaoyang Tan, Lijie Chen, Jiawang Chen, Gang Li, Hanlin Zhang, Yu Zhang, Weike Wang, Liang Li. Thermal Conductivity of Few-Layer PtS2 and PtSe2 Obtained from Optothermal Raman Spectroscopy. The Journal of Physical Chemistry C. 2021; ():1.
Chicago/Turabian StyleShiqi Yin; Weitao Zhang; Chaoyang Tan; Lijie Chen; Jiawang Chen; Gang Li; Hanlin Zhang; Yu Zhang; Weike Wang; Liang Li. 2021. "Thermal Conductivity of Few-Layer PtS2 and PtSe2 Obtained from Optothermal Raman Spectroscopy." The Journal of Physical Chemistry C , no. : 1.
PdSe2, a star photosensitive functional material, has been successfully used in photodetectors based on sensing mechanisms of photogating, photoconductive, and photovoltaic effects. Here, a photothermoelectric (PTE) effect is observed in photodetectors based on PdSe2 flakes grown by chemical vapor deposition. The unique photoresponse arises from an electron temperature gradient instead of electron–hole separation. Direct evidence of the PTE effect is confirmed by a nonlocal photoresponse under zero bias. Moreover, the PdSe2 photodetector shows high performance in terms of ultrafast response speed (4 µs), high air-stability, broadband spectrum photodetection, reasonable responsivity, and anisotropic optical response. This study paves a new way for developing high-performance photodetectors based on PdSe2 layered materials.
Gang Li; Shiqi Yin; Chaoyang Tan; Lijie Chen; Mengxi Yu; Liang Li; Feng Yan. Fast Photothermoelectric Response in CVD‐Grown PdSe 2 Photodetectors with In‐Plane Anisotropy. Advanced Functional Materials 2021, 2104787 .
AMA StyleGang Li, Shiqi Yin, Chaoyang Tan, Lijie Chen, Mengxi Yu, Liang Li, Feng Yan. Fast Photothermoelectric Response in CVD‐Grown PdSe 2 Photodetectors with In‐Plane Anisotropy. Advanced Functional Materials. 2021; ():2104787.
Chicago/Turabian StyleGang Li; Shiqi Yin; Chaoyang Tan; Lijie Chen; Mengxi Yu; Liang Li; Feng Yan. 2021. "Fast Photothermoelectric Response in CVD‐Grown PdSe 2 Photodetectors with In‐Plane Anisotropy." Advanced Functional Materials , no. : 2104787.
This work presents a systematic study of phonon modes in Indium tellurides (In2Te5), a member of Pentatelluride M2Te5, where M = Al, Ga, and In, by Raman spectroscopy. We demonstrated the strong anisotropic Raman response for linearly polarized excitation, and the eight detected Raman characteristic peaks were further revealed by density functional perturbation theory calculations. All Raman mode shifts exhibit a linear temperature dependence. The first-order temperature coefficient (χ) of the In2Te5 Raman mode ranges from –0.00444 to –0.01557 cm−1/K. Our results shed light on phonon vibrational properties of In2Te5, attracting future research interest in group III–VI layered semiconductors.
Yulan Zhou; Weike Wang; Liang Li; Penglai Gong; Dongsheng Tang. In-plane anisotropic Raman response of layered In2Te5 semiconductor. Applied Physics Letters 2021, 118, 182105 .
AMA StyleYulan Zhou, Weike Wang, Liang Li, Penglai Gong, Dongsheng Tang. In-plane anisotropic Raman response of layered In2Te5 semiconductor. Applied Physics Letters. 2021; 118 (18):182105.
Chicago/Turabian StyleYulan Zhou; Weike Wang; Liang Li; Penglai Gong; Dongsheng Tang. 2021. "In-plane anisotropic Raman response of layered In2Te5 semiconductor." Applied Physics Letters 118, no. 18: 182105.
Low-symmetry two-dimensional (2D) materials have exhibited novel anisotropic properties in optics, electronics, and mechanics. Such characteristics have opened up new avenues for fundamental research on nano-electronic devices. In-plane thermal conductivity plays a pivotal role in the electronic performance of devices. This article reports a systematic study of the in-plane anisotropic thermal conductivity of PdSe2 with a pentagonal, low-symmetry structure. An in-plane anisotropic ratio up to 1.42 was observed by the micro-Raman thermometry method. In the Raman scattering spectrum, we extracted a frequency shift from the
Lijie Chen; Weitao Zhang; Hanlin Zhang; Jiawang Chen; Chaoyang Tan; Shiqi Yin; Gang Li; Yu Zhang; Penglai Gong; Liang Li. In-Plane Anisotropic Thermal Conductivity of Low-Symmetry PdSe2. Sustainability 2021, 13, 4155 .
AMA StyleLijie Chen, Weitao Zhang, Hanlin Zhang, Jiawang Chen, Chaoyang Tan, Shiqi Yin, Gang Li, Yu Zhang, Penglai Gong, Liang Li. In-Plane Anisotropic Thermal Conductivity of Low-Symmetry PdSe2. Sustainability. 2021; 13 (8):4155.
Chicago/Turabian StyleLijie Chen; Weitao Zhang; Hanlin Zhang; Jiawang Chen; Chaoyang Tan; Shiqi Yin; Gang Li; Yu Zhang; Penglai Gong; Liang Li. 2021. "In-Plane Anisotropic Thermal Conductivity of Low-Symmetry PdSe2." Sustainability 13, no. 8: 4155.
Silicon‐based semiconductor materials dominate modern technology for more than half a century with extraordinary electrical‐optical performance and mutual processing compatibility. Now, 2D materials have rapidly established themselves as prospective candidates for the next‐generation semiconductor industry because of their novel properties. Considering chemical and processing compatibility, silicon‐based 2D materials possess significant advantages in integrating with silicon. Here, a systematic study is reported on the structural, electrical, and optical performance of silicon telluride (Si2Te3) 2D material, a IV−VI silicon‐based semiconductor with a layered structure. The ultrawide photoluminescence (PL) spectra in the range of 550–1050 nm reveals the intrinsic defects in Si2Te3. The Si2Te3‐based field‐effect transistors (FETs) and photodetectors show a typical p‐type behavior and a remarkable broadband spectral response in the range of 405–1064 nm. Notably, the photoresponsivity and detectivity of the photodetector device with 13.5 nm in thickness and upon 405 nm illumination can reach up to 65 A W−1 and 2.81 × 1012 Jones, respectively, outperforming many traditional broadband photodetectors. It is believed this work will excite interests in further exploring the practical application of 2D silicon‐based materials in the field of optoelectronics.
Jiawang Chen; Chaoyang Tan; Gang Li; Lijie Chen; Hanlin Zhang; Shiqi Yin; Ming Li; Liang Li; Guanghai Li. 2D Silicon‐Based Semiconductor Si 2 Te 3 toward Broadband Photodetection. Small 2021, 17, 2006496 .
AMA StyleJiawang Chen, Chaoyang Tan, Gang Li, Lijie Chen, Hanlin Zhang, Shiqi Yin, Ming Li, Liang Li, Guanghai Li. 2D Silicon‐Based Semiconductor Si 2 Te 3 toward Broadband Photodetection. Small. 2021; 17 (13):2006496.
Chicago/Turabian StyleJiawang Chen; Chaoyang Tan; Gang Li; Lijie Chen; Hanlin Zhang; Shiqi Yin; Ming Li; Liang Li; Guanghai Li. 2021. "2D Silicon‐Based Semiconductor Si 2 Te 3 toward Broadband Photodetection." Small 17, no. 13: 2006496.
Broken-gap van der Waals (vdW) heterojunctions based on 2D materials are promising structures to fabricate high-speed switching and low-power multifunctional devices thanks to its charge transport versus quantum tunneling mechanism. However, the tunneling current is usually generated under both positive and negative bias voltage, resulting in small rectification and photocurrent on/off ratio. In this paper, we report a broken-gap vdW heterojunction PtS2/WSe2 with a bilateral accumulation region design and a big band offset by utilizing thick PtS2 as an effective carrier-selective contact, which exhibits an ultrahigh reverser rectification ratio approaching 108 and on/off ratio over 108 at room temperature. We also find excellent photodetection properties in such a heterodiode with a large photocurrent on/off ratio over 105 due to its ultralow forward current and a comparable photodetectivity of 3.8 × 1010 Jones. In addition, the response time of such a photodetector reaches 8 μs owing to the photoinduced tunneling mechanism and reduced interface trapping effect. The proposed heterojunction not only demonstrates the high-performance broken-gap heterodiode but also provides in-depth understanding of the tunneling mechanism in the development of future electronic and optoelectronic applications.
Chaoyang Tan; Shiqi Yin; Jiawang Chen; Yuan Lu; Wensen Wei; Haifeng Du; Kailang Liu; Fakun Wang; Tianyou Zhai; Liang Li. Broken-Gap PtS2/WSe2 van der Waals Heterojunction with Ultrahigh Reverse Rectification and Fast Photoresponse. ACS Nano 2021, 15, 8328 -8337.
AMA StyleChaoyang Tan, Shiqi Yin, Jiawang Chen, Yuan Lu, Wensen Wei, Haifeng Du, Kailang Liu, Fakun Wang, Tianyou Zhai, Liang Li. Broken-Gap PtS2/WSe2 van der Waals Heterojunction with Ultrahigh Reverse Rectification and Fast Photoresponse. ACS Nano. 2021; 15 (5):8328-8337.
Chicago/Turabian StyleChaoyang Tan; Shiqi Yin; Jiawang Chen; Yuan Lu; Wensen Wei; Haifeng Du; Kailang Liu; Fakun Wang; Tianyou Zhai; Liang Li. 2021. "Broken-Gap PtS2/WSe2 van der Waals Heterojunction with Ultrahigh Reverse Rectification and Fast Photoresponse." ACS Nano 15, no. 5: 8328-8337.
Emerging classes of 2D noble‐transition‐metal dichalcogenides (NTMDs) stand out for their unique structure and novel physical properties in recent years. With the nearly full occupation of the d orbitals, 2D NTMDs are expected to be more attractive due to the unique interlayer vibrational behaviors and largely tunable electronic structures compared to most transition metal dichalcogenide semiconductors. The novel properties of 2D NTMDs have stimulated various applications in electronics, optoelectronics, catalysis, and sensors. Here, the latest development of 2D NTMDs are reviewed from the perspective of structure characterization, preparation, and application. Based on the recent research, the conclusions and outlook for these rising 2D NTMDs are presented.
Lejing Pi; Liang Li; Kailang Liu; Qingfu Zhang; Huiqiao Li; Tianyou Zhai. Recent Progress on 2D Noble‐Transition‐Metal Dichalcogenides. Advanced Functional Materials 2019, 29, 1 .
AMA StyleLejing Pi, Liang Li, Kailang Liu, Qingfu Zhang, Huiqiao Li, Tianyou Zhai. Recent Progress on 2D Noble‐Transition‐Metal Dichalcogenides. Advanced Functional Materials. 2019; 29 (51):1.
Chicago/Turabian StyleLejing Pi; Liang Li; Kailang Liu; Qingfu Zhang; Huiqiao Li; Tianyou Zhai. 2019. "Recent Progress on 2D Noble‐Transition‐Metal Dichalcogenides." Advanced Functional Materials 29, no. 51: 1.
Wentao Gong; Liang Li; Penglai Gong; Yulan Zhou; Zhitao Zhang; Weichang Zhou; Weike Wang; Ziran Liu; Dongsheng Tang. Raman investigation of layered ZrGeTe4 semiconductor. Applied Physics Letters 2019, 114, 172104 .
AMA StyleWentao Gong, Liang Li, Penglai Gong, Yulan Zhou, Zhitao Zhang, Weichang Zhou, Weike Wang, Ziran Liu, Dongsheng Tang. Raman investigation of layered ZrGeTe4 semiconductor. Applied Physics Letters. 2019; 114 (17):172104.
Chicago/Turabian StyleWentao Gong; Liang Li; Penglai Gong; Yulan Zhou; Zhitao Zhang; Weichang Zhou; Weike Wang; Ziran Liu; Dongsheng Tang. 2019. "Raman investigation of layered ZrGeTe4 semiconductor." Applied Physics Letters 114, no. 17: 172104.
Van der Waals (vdW) heterostructures based on atomically thin 2D materials have led to a new era in next‐generation optoelectronics due to their tailored energy band alignments and ultrathin morphological features, especially in photodetectors. However, these photodetectors often show an inevitable compromise between photodetectivity and photoresponsivity with one high and the other low. Herein, a highly sensitive WSe2/SnS2 photodiode is constructed on BN thin film by exfoliating each material and manually stacking them. The WSe2/SnS2 vdW heterostructure shows ultralow dark currents resulting from the depletion region at the junction and high direct tunneling current when illuminated, which is confirmed by the energy band structures and electrical characteristics fitted with direct tunneling. Thus, the distinctive WSe2/SnS2 vdW heterostructure exhibits both ultrahigh photodetectivity of 1.29 × 1013 Jones (Iph/Idark ratio of ≈106) and photoresponsivity of 244 A W−1 at a reverse bias under the illumination of 550 nm light (3.77 mW cm−2).
Xing Zhou; Xiaozong Hu; Shasha Zhou; Hong-Yue Song; Qi Zhang; Lejing Pi; Liang Li; Huiqiao Li; Jing-Tao Lu; Tianyou Zhai. Tunneling Diode Based on WSe2 /SnS2 Heterostructure Incorporating High Detectivity and Responsivity. Advanced Materials 2018, 30, 1 .
AMA StyleXing Zhou, Xiaozong Hu, Shasha Zhou, Hong-Yue Song, Qi Zhang, Lejing Pi, Liang Li, Huiqiao Li, Jing-Tao Lu, Tianyou Zhai. Tunneling Diode Based on WSe2 /SnS2 Heterostructure Incorporating High Detectivity and Responsivity. Advanced Materials. 2018; 30 (7):1.
Chicago/Turabian StyleXing Zhou; Xiaozong Hu; Shasha Zhou; Hong-Yue Song; Qi Zhang; Lejing Pi; Liang Li; Huiqiao Li; Jing-Tao Lu; Tianyou Zhai. 2018. "Tunneling Diode Based on WSe2 /SnS2 Heterostructure Incorporating High Detectivity and Responsivity." Advanced Materials 30, no. 7: 1.
We exfoliated bulk GaGeTe crystals down to ultrathin flakes using the scotch tape method and fabricated field effect transistors (FETs). The GaGeTe FETs display a p-type behavior with drain current modulation on the order of 103, hole mobility of 0.45 cm2 V−1 s−1, and photoresponsivity of 3.6 A W−1 at room temperature. These findings suggest that the layered GaGeTe is a promising 2D semiconductor for fabricating devices, such as transistors and photodetectors.
Weike Wang; Liang Li; Zhitao Zhang; Jiyong Yang; Dongsheng Tang; Tianyou Zhai. Ultrathin GaGeTe p-type transistors. Applied Physics Letters 2017, 111, 203504 .
AMA StyleWeike Wang, Liang Li, Zhitao Zhang, Jiyong Yang, Dongsheng Tang, Tianyou Zhai. Ultrathin GaGeTe p-type transistors. Applied Physics Letters. 2017; 111 (20):203504.
Chicago/Turabian StyleWeike Wang; Liang Li; Zhitao Zhang; Jiyong Yang; Dongsheng Tang; Tianyou Zhai. 2017. "Ultrathin GaGeTe p-type transistors." Applied Physics Letters 111, no. 20: 203504.
An interesting in-plane anisotropic layered dimetal chalcogenide Ta2NiS5 is introduced, and the optical and electrical properties with respect to its in-plane anisotropy are systematically studied. The Raman vibration modes have been identified by Raman spectra measurements combined with calculations of phonon-related properties. Importantly, the Ta2NiS5 flakes exhibit strong anisotropic Raman response under the angle-resolved polarized Raman spectroscopy measurements. We found that Raman intensities of the Ag mode not only depend on rotation angle but are also related to the sample thickness. In contrast, the infrared absorption with light polarized along the a axis direction is always larger than that in the c axis direction regardless of thickness under the polarization-resolved infrared spectroscopy measurements. Remarkably, the first-principles calculations combined with angle-resolved conductance measurements indicate strong anisotropic conductivity of Ta2NiS5. Our results not only prove Ta2NiS5 is a promising in-plane anisotropic 2D material but also provide an interesting platform for future functionalized electronic devices.
Liang Li; Penglai Gong; Weike Wang; Bei Deng; Lejing Pi; Jing Yu; Xing Zhou; Xingqiang Shi; Huiqiao Li; Tianyou Zhai. Strong In-Plane Anisotropies of Optical and Electrical Response in Layered Dimetal Chalcogenide. ACS Nano 2017, 11, 10264 -10272.
AMA StyleLiang Li, Penglai Gong, Weike Wang, Bei Deng, Lejing Pi, Jing Yu, Xing Zhou, Xingqiang Shi, Huiqiao Li, Tianyou Zhai. Strong In-Plane Anisotropies of Optical and Electrical Response in Layered Dimetal Chalcogenide. ACS Nano. 2017; 11 (10):10264-10272.
Chicago/Turabian StyleLiang Li; Penglai Gong; Weike Wang; Bei Deng; Lejing Pi; Jing Yu; Xing Zhou; Xingqiang Shi; Huiqiao Li; Tianyou Zhai. 2017. "Strong In-Plane Anisotropies of Optical and Electrical Response in Layered Dimetal Chalcogenide." ACS Nano 11, no. 10: 10264-10272.
The very recently rediscovered group-10 transition metal dichalcogenides (TMDs) such as PtS2 and PtSe2, have joined the 2D material family as potentially promising candidates for electronic and optoeletronic applications due to their theoretically high carrier mobility, widely tunable bandgap, and ultrastability. Here, the first exploration of optoelectronic application based on few-layered PtS2 using h-BN as substrate is presented. The phototransistor exhibits high responsivity up to 1.56 × 103 A W−1 and detectivity of 2.9 × 1011 Jones. Additionally, an ultrahigh photogain ≈2 × 106 is obtained at a gate voltage Vg = 30 V, one of the highest gain among 2D photodetectors, which is attributed to the existence of trap states. More interestingly, the few-layered PtS2 phototransistor shows a back gate modulated photocurrent generation mechanism, that is, from the photoconductive effect dominant to photogating effect dominant via tuning the gate voltage from the OFF state to the ON state. Such good properties combined with gate-controlled photoresponse of PtS2 make it a competitive candidate for future 2D optoelectronic applications.
Liang Li; Weike Wang; Yang Chai; Huiqiao Li; Mingliang Tian; Tianyou Zhai. Few-Layered PtS2Phototransistor on h-BN with High Gain. Advanced Functional Materials 2017, 27, 1 .
AMA StyleLiang Li, Weike Wang, Yang Chai, Huiqiao Li, Mingliang Tian, Tianyou Zhai. Few-Layered PtS2Phototransistor on h-BN with High Gain. Advanced Functional Materials. 2017; 27 (27):1.
Chicago/Turabian StyleLiang Li; Weike Wang; Yang Chai; Huiqiao Li; Mingliang Tian; Tianyou Zhai. 2017. "Few-Layered PtS2Phototransistor on h-BN with High Gain." Advanced Functional Materials 27, no. 27: 1.
Multielemental systems enable the use of multiple degrees of freedom for control of physical properties by means of stoichiometric variation. This has attracted extremely high interest in the field of 2D optoelectronics in recent years. Here, for the first time, multilayer 2D ternary Ta2NiSe5 flakes are successfully fabricated using a mechanical exfoliation method from chemical vapor transport synthesized high quality bulk and the optoelectronic properties are systematically investigated. Importantly, a high responsivity of 17.21 A W−1 and high external quantum efficiency of 2645% are recorded from an as-fabricated photodetector at room temperature in air; this is superior to most other 2D materials-based photodetectors that have been reported. More intriguingly, a usual sublinear and an unusual superlinear light-intensity-dependent photocurrent are observed under air and vacuum, respectively. These excellent and special properties make multilayer ternary Ta2NiSe5 a highly competitive candidate for future infrared optoelectronic applications and an interesting platform for photophysics studies.
Liang Li; Weike Wang; Lin Gan; Nan Zhou; Xiangde Zhu; Qi Zhang; Huiqiao Li; Mingliang Tian; Tianyou Zhai. Ternary Ta 2 NiSe 5 Flakes for a High‐Performance Infrared Photodetector. Advanced Functional Materials 2016, 26, 8281 -8289.
AMA StyleLiang Li, Weike Wang, Lin Gan, Nan Zhou, Xiangde Zhu, Qi Zhang, Huiqiao Li, Mingliang Tian, Tianyou Zhai. Ternary Ta 2 NiSe 5 Flakes for a High‐Performance Infrared Photodetector. Advanced Functional Materials. 2016; 26 (45):8281-8289.
Chicago/Turabian StyleLiang Li; Weike Wang; Lin Gan; Nan Zhou; Xiangde Zhu; Qi Zhang; Huiqiao Li; Mingliang Tian; Tianyou Zhai. 2016. "Ternary Ta 2 NiSe 5 Flakes for a High‐Performance Infrared Photodetector." Advanced Functional Materials 26, no. 45: 8281-8289.
Superlattice nanowires are expected to show further enhanced thermoelectric performance compared with conventional nanowires or superlattice thin films. We report the epitaxial growth of high density Bi2Te3/Sb superlattice nanowire arrays with a very small bilayer thickness by pulse electrodeposition. Transmission electron microscopy, selected area electron diffraction and high resolution transmission electron microscopy were used to characterize the superlattice nanowires, and Harman technique was employed to measure the figure of merit (ZT) of the superlattice nanowire array in high vacuum condition. The superlattice nanowire arrays exhibit a ZT of 0.15 at 330 K, and a temperature difference of about 6.6 K can be realized across the nanowire arrays.
Liang Li; Si-Chao Xu. Epitaxial Growth and Thermoelectric Measurement of Bi2Te3/Sb Superlattice Nanowires. Chinese Journal of Chemical Physics 2016, 29, 365 -368.
AMA StyleLiang Li, Si-Chao Xu. Epitaxial Growth and Thermoelectric Measurement of Bi2Te3/Sb Superlattice Nanowires. Chinese Journal of Chemical Physics. 2016; 29 (3):365-368.
Chicago/Turabian StyleLiang Li; Si-Chao Xu. 2016. "Epitaxial Growth and Thermoelectric Measurement of Bi2Te3/Sb Superlattice Nanowires." Chinese Journal of Chemical Physics 29, no. 3: 365-368.
Liang Li; Sichao Xu; Guanghai Li. Enhancement of Thermoelectric Properties in Bi-Sb-Te Alloy Nanowires by Pulsed Electrodeposition. Energy Technology 2015, 3, 825 -829.
AMA StyleLiang Li, Sichao Xu, Guanghai Li. Enhancement of Thermoelectric Properties in Bi-Sb-Te Alloy Nanowires by Pulsed Electrodeposition. Energy Technology. 2015; 3 (8):825-829.
Chicago/Turabian StyleLiang Li; Sichao Xu; Guanghai Li. 2015. "Enhancement of Thermoelectric Properties in Bi-Sb-Te Alloy Nanowires by Pulsed Electrodeposition." Energy Technology 3, no. 8: 825-829.
S. C. Xu; L. Li; S. S. Pan; Y. Y. Luo; Y. X. Zhang; G. H. Li. Reversible modulated mid-infrared absorption of Ag/TiO2 by photoinduced interfacial charge transfer. Applied Physics Letters 2014, 105, 141902 .
AMA StyleS. C. Xu, L. Li, S. S. Pan, Y. Y. Luo, Y. X. Zhang, G. H. Li. Reversible modulated mid-infrared absorption of Ag/TiO2 by photoinduced interfacial charge transfer. Applied Physics Letters. 2014; 105 (14):141902.
Chicago/Turabian StyleS. C. Xu; L. Li; S. S. Pan; Y. Y. Luo; Y. X. Zhang; G. H. Li. 2014. "Reversible modulated mid-infrared absorption of Ag/TiO2 by photoinduced interfacial charge transfer." Applied Physics Letters 105, no. 14: 141902.
Single-crystalline Bi₀.₅Sb₁.₅Te₃ nanowires were fabricated by a template-assisted pulsed electrodeposition technique; the thermal conductivity of a single Bi₀.₅Sb₁.₅Te₃ nanowire of different diameters was characterized through a self-heating 3 ω method. The temperature-dependent resistance measurements prove the semiconductor behavior of the nanowires. The extremely low thermal conductivity of the nanowires was found compared with the corresponding bulk, and the Umklapp peaks shift to a higher temperature as the decreasing nanowire's diameter decreases, which qualitatively agrees with the theoretical calculations based on the Callaway model. The boundary scattering plays an important role in the reduction of the thermal conductivity and in the shift of the Umklapp peak of the Bi₀.₅Sb₁.₅Te₃ nanowires.
Liang Li; Chiming Jin; Sichao Xu; Jiyong Yang; Haifeng Du; Guanghai Li. Thermal conductivity of a single Bi0.5Sb1.5Te3single-crystalline nanowire. Nanotechnology 2014, 25, 415704 .
AMA StyleLiang Li, Chiming Jin, Sichao Xu, Jiyong Yang, Haifeng Du, Guanghai Li. Thermal conductivity of a single Bi0.5Sb1.5Te3single-crystalline nanowire. Nanotechnology. 2014; 25 (41):415704.
Chicago/Turabian StyleLiang Li; Chiming Jin; Sichao Xu; Jiyong Yang; Haifeng Du; Guanghai Li. 2014. "Thermal conductivity of a single Bi0.5Sb1.5Te3single-crystalline nanowire." Nanotechnology 25, no. 41: 415704.
This paper reports the phase transition temperature regulation of VO2 (M) nanoparticles using interfacial defects and size effect other than the traditional doping routine. The nanoparticles exhibit excellent thermochromic performance and a low threshold voltage.
Ming Li; Xing Wu; Liang Li; Yuxi Wang; Dengbing Li; Jing Pan; Sijia Li; Litao Sun; Guanghai Li. Defect-mediated phase transition temperature of VO2 (M) nanoparticles with excellent thermochromic performance and low threshold voltage. Journal of Materials Chemistry A 2014, 2, 4520 .
AMA StyleMing Li, Xing Wu, Liang Li, Yuxi Wang, Dengbing Li, Jing Pan, Sijia Li, Litao Sun, Guanghai Li. Defect-mediated phase transition temperature of VO2 (M) nanoparticles with excellent thermochromic performance and low threshold voltage. Journal of Materials Chemistry A. 2014; 2 (13):4520.
Chicago/Turabian StyleMing Li; Xing Wu; Liang Li; Yuxi Wang; Dengbing Li; Jing Pan; Sijia Li; Litao Sun; Guanghai Li. 2014. "Defect-mediated phase transition temperature of VO2 (M) nanoparticles with excellent thermochromic performance and low threshold voltage." Journal of Materials Chemistry A 2, no. 13: 4520.
The influence of Sb doping on the structural and optical properties of the SnO2 nanocrystals and films were investigated. An unusual enhancement in near infrared absorption was found in the SnO2 nanocrystals with increasing Sb doping content, and the maximum absorption shifted to shorter wavelength.
J. M. Xu; Liang Li; S. Wang; H. L. Ding; Y. X. Zhang; G. H. Li. Influence of Sb doping on the structural and optical properties of tin oxide nanocrystals. CrystEngComm 2013, 15, 3296 -3300.
AMA StyleJ. M. Xu, Liang Li, S. Wang, H. L. Ding, Y. X. Zhang, G. H. Li. Influence of Sb doping on the structural and optical properties of tin oxide nanocrystals. CrystEngComm. 2013; 15 (17):3296-3300.
Chicago/Turabian StyleJ. M. Xu; Liang Li; S. Wang; H. L. Ding; Y. X. Zhang; G. H. Li. 2013. "Influence of Sb doping on the structural and optical properties of tin oxide nanocrystals." CrystEngComm 15, no. 17: 3296-3300.