A novel design of a two-mode de/multiplexer (DE/MUX) based on multimode interference (MMI) couplers is presented. Instead of the phase shifter (PS) in the shape of a narrow strip waveguide, which needs tight design and fabrication requirements, a tilted joint is used as a PS in the proposed device, so that the effects of the fabrication errors of the PS on the performance of the device can be reduced greatly. Simulations show that while the size of the device is as small as 39.54 μm, which is more compact than other MMI-based DE/MUX, the fabrication tolerance is larger than $\pm 25\mathrm{nm}$. Within the entire C-band wavelength range, the de-multiplexing crosstalk of the device is lower than $-28\mathrm{dB}$ and the insertion loss is below 1.0 dB.

We present an InP based distributed Bragg reflector (DBR) laser transmitter which has a wide wavelength tuning range and a high chip output power for wavelength division multiplexing passive optical network (WDM-PON) applications. By butt-jointing InGaAsP with 1.45 µm emission wavelength as the material of the grating section, the laser wavelength can be tuned for over 13 nm by the DBR current. Accompanied by varying the chip temperature, the tuning range can be further enlarged to 16 nm. With the help of the integrated semiconductor optical amplifier (SOA), the largest chip output power is over 30 mW. The electroabsorption modulator (EAM) is integrated into the device by the selective-area growth (SAG) technique. The 3 dB small signal modulation bandwidth of the EAM is over 13 GHz. The device has both a simple tuning scheme and a simple fabrication procedure, making it suitable for low cost massive production which is desirable for WDM-PON uses.

An eight-channel monolithically integrated complex-coupled distributed-feedback laser array based on sampled gratings has been designed and fabricated. Selective lasing at different wavelengths is obtained. The frequency separation between each adjacent channel is about 200 GHz. The typical threshold current is between 30 and 40 mA. The optical output power of each channel is about 10 mW at an injection current of 100 mA. The continuous tuning of emission wavelength with injected currents is also demonstrated.

We report widely tunable two-section distributed Bragg reflector (DBR) lasers, which have InGaAlAs multiple quantum wells (MQWs) as the gain material. By butt-jointing InGaAsP, which has a photoluminescence wavelength of 1.4 μm as the material of the DBR section, a wavelength tuning range of 12 nm can be obtained by current injection into the DBR section. The direct modulation bandwidth of the lasers is greater than 10 GHz over the entire wavelength tuning range up to 40°C. Compared with InGaAsP DBR lasers having the same structure, the InGaAlAs lasers have smaller variations in both the threshold current and slope efficiency with the temperature because of the better electron confinement in the InGaAlAs MQWs. Moreover, the DBR-current-induced decreases in the modulation bandwidth and side mode suppression ratio (SMSR) of the optical spectra are notably smaller for the InGaAlAs lasers than for the InGaAsP lasers.

Multiwavelength laser arrays (MWLAs) fabricated by a novel upper separate confinement heterostructure (SCH) layer selective area growth (SAG) technique are studied in comparison with laser arrays fabricated by the conventional multiquantum well (MQW) SAG technique. For MWLAs by the MQW SAG, the range of the laser emission of the array is smaller than the span of the PL wavelengths of the MQW active layers. In addition, the material quality of the MQW layer degrades greatly as the width of the SAG strips is increased. Thus, the MWLAs fabricated by the method have scattered L-I characters and large fluctuation of wavelength spacings. In contrast, the MWLAs fabricated by the novel SAG method have much better wavelength spacing uniformity than those by MQW SAG, which is comparable to or better than the MWLAs fabricated by E-beam direct writing. Furthermore, the upper SCH layer SAG technique is suitable for the fabrication of MWLAs with wavelength interval, which is a challenge even for E-beam technique. In the SCH layer SAG, the MQW layer is untouched, and the same is true for all the laser elements in an array. The metal organic vapor phase epitaxies ability to control the material properties with high accuracy can be fully utilized for the fabrication of MWLAs. Combined with partially gain-coupled distributed feedback structures, the technique is promising for the fabrication of low-cost, high-quality MWLAs.

A modified selective area growth (SAG) technique, in which the effective index of only the upper separate confinement heterostructure (SCH) layer are modulated to obtain different emission wavelengths, is reported for the fabrication of dense wavelength division multiplexing (DWDM) multi-wavelength laser arrays (MWLAs). InP based 1.5 μm distributed feedback (DFB) laser arrays with 0.8 nm, 0.42 nm, and 0.19 nm channel separations are demonstrated, all showing highly uniform wavelength spacings. The standard deviation of the distribution of the wavelength residues with respect to the corresponding linear fitting values is 0.0672 nm, which is a lot smaller than those of the MWLAs fabricated by other techniques including electron beam lithography. These results indicate that our SAG technique which needs only a simple procedure is promising for the fabrication of low cost DWDM MWLAs.