Many speech processing systems struggle in conditions with low signal-to-noise ratios and in changing acoustic environments. Adaptation at the transduction level with integrated signal processing could help to address this; in human hearing, transduction and signal processing are integrated and can be adaptively tuned for noisy conditions. Here we report a microelectromechanical cochlea as a bio-inspired acoustic sensor with integrated signal processing functionality. Real-time feedback is used to tune the sensing and processing properties, and dynamic switching between linear and nonlinear characteristics improves the detection of signals in noisy conditions, increases the sensor dynamic range and enables adaptation to changing acoustic environments. The transition to nonlinear behaviour is attributed to a Hopf bifurcation and we experimentally validate its dependence on sensor and feedback parameters. We also show that output-signal coupling between two coupled sensors can increase the frequency coverage.

With the recent advances in the field of nanotechnology, measurement and manipulation requirements at the nanoscale have become more stringent than ever before. In atomic force microscopy, high-speed performance alone is not sufficient without considerations of other aspects of the measurement task, such as the feature aspect ratio, required range, or acceptable probe-sample interaction forces. In this paper, the authors discuss these requirements and the research directions that provide the highest potential in meeting them. The authors elaborate on the efforts toward the downsizing of self-sensed and self-actuated probes as well as on upscaling by active cantilever arrays. The authors present the fabrication process of active probes along with the tip customizations carried out targeting specific application fields. As promising application in scope of nanofabrication, field emission scanning probe lithography is introduced. The authors further discuss their control and design approach. Here, microactuators, e.g., multilayer microcantilevers, and macroactuators, e.g., flexure scanners, are combined in order to simultaneously meet both the range and speed requirements of a new generation of scanning probe microscopes.

Single-electron devices operating at room temperature require sub-5 nm quantum dots having tunnel junctions of comparable dimensions. Further development in nanoelectronics depends on the capability to generate mesoscopic structures and interfacing these with complementary metal–oxide–semiconductor devices in a single system. The authors employ a combination of two novel methods of fabricating room temperature silicon single-electron transistors (SETs), Fowler–Nordheim scanning probe lithography (F-N SPL) with active cantilevers and cryogenic reactive ion etching followed by pattern-dependent oxidation. The F-N SPL employs a low energy electron exposure of 5–10 nm thick high-resolution molecular resist (Calixarene) resulting in single nanodigit lithographic performance [Rangelow et al., Proc. SPIE 7637, 76370V (2010)]. The followed step of pattern transfer into silicon becomes very challenging because of the extremely low resist thickness, which limits the etching depth. The authors developed a computer simulation code to simulate the reactive ion etching at cryogenic temperatures (−120 °C). In this article, the authors present the alliance of all these technologies used for the manufacturing of SETs capable to operate at room temperatures.

Electrical operation of room-temperature (RT) single dopant atom quantum dot (QD) transistors, based on phosphorous atoms isolated within nanoscale SiO₂ tunnel barriers, is presented. In contrast to single dopant transistors in silicon, where the QD potential well is shallow and device operation limited to cryogenic temperature, here, a deep (∼2 eV) potential well allows electron confinement at RT. Our transistors use ∼10 nm size scale Si/SiO₂/Si point-contact tunnel junctions, defined by scanning probe lithography and geometric oxidation. “Coulomb diamond” charge stability plots are measured at 290 K, with QD addition energy ∼0.3 eV. Theoretical simulation gives a QD size of similar order to the phosphorous atom separation ∼2 nm. Extraction of energy states predicts an anharmonic QD potential, fitted using a Morse oscillator-like potential. The results extend single-atom transistor operation to RT, enable tunneling spectroscopy of impurity atoms in insulators, and allow the energy landscape for P atoms in SiO₂ to be determined.

More than 40 years after its invention, the atomic force microscopy (AFM) can be integrated with scanning electron microscope (SEM) instruments as an increasingly capable and productive characterization tool with sub-nanometer spatial resolution. The authors have designed and developed an AFM instrument capable to be integrated into any SEM or in a combination of SEM with a focused ion-beam (FIB) tool. The combination of two or more different types of techniques like SEM, energy dispersive x-ray spectroscopy, and AFM is called correlative microscopy because analytical information from the same place of the sample can be obtained and correlated. For the first time, they introduced to the SEM/FIB tool correlative nanofabrication methods like field-emission scanning probe lithography, tip-based electron beam induced deposition, and nanomachining. The combination of all these methods provides a completely new nanotechnology instrument, which should be seen as a tool for correlative nanofabrication and microscopy. Thus, it provides for the first time the capabilities of a stand-alone instrument with the capabilities of nondestructive three-dimensional tip-based metrology and nanofabrication into the combined SEM/FIB tool. In this article, the authors describe all these methods in detail and present a brief example of the results obtained. They demonstrate that the self-sensing, self-actuating cantilevers (called active cantilevers) equipped with Diamond tip are a versatile toolkit for fast imaging and emerging nanofabrication. The AFM integrated into SEM is using active cantilevers that can characterize and generate nanostructures all in situ without the need to break-vacuum or contaminate the sample.

In this work, the fabrication and operation of an active parallel cantilever device integrating four self-sensing and self-actuating probes in an array is presented. The so called “Quattro” cantilever system is controlled by a multichannel field programmable gate array (FPGA) controller. The integrated cantilever devices are fabricated on the basis of a silicon-on-insulator wafer using surface micromachining and gas chopping plasma-etching processes [I. W. Rangelow, J. Vac. Sci. Technol., A 21, 1550 (2003)]. The unique design of the active cantilever probes provides both patterning and readout capabilities [Kaestner et al., J. Micro-Nanolithogr. MEMS 14, 031202 (2015)]. The thermomechanical actuation allows the individually operation of each cantilever in static and dynamic modes. This enables a simultaneous atomic force microscopy operation of all cantilevers in an array, while the piezoresistive read-out of the cantilever bending routinely ensures atomic resolution at a high imaging speed. The scanning probe lithography capabilities of the active cantilevers are based on the utilization of a Fowler–Nordheim field emission process of low-energy electrons (20–50 eV) for direct writing maskless lithography. The cantilever in the Quattro active cantilever array have a pitch of 125 μm (tip-to-tip distance), which allows an image size of 0.5 × 0.2 mm to be acquired within a single scan with 0.2 nm resolution in the vertical direction. Using parallel imaging, an effective scanning speed of 5.6 mm/s is achieved. The multichannel, scalable controller architecture allows four FPGA channels to scan and collect data simultaneously. A data buffer of 128 Mbits for a single frame of 4096 × 1024 pixels is applied. The designed data transfer system allows a packet size of 128 pixels to be transmitted within less than 10 μs, respectively. Thus, the entire image frame is transferred in less than 280 ms, which exceeds the required throughput in the practical cases like critical dimension-metrology and inspection. In this article, the authors are presenting the concept of the system, which combines imaging, metrology, and lithography capabilities with a low-cost of ownership. In this context, the authors are investigating the throughput capability, reproducibility, resolution, and positioning accuracy of the Quattro active cantilever system.