Prof. Dr. Perlin Piotr

Optoelectronic Devices Laboratory (ODL), Institute of High Pressure Physics "UNIPRESS", The Polish Academy of Sciences, Warsaw, Poland

Prof. Dr. Perlin Piotr

Optoelectronic Devices Laboratory (ODL), Institute of High Pressure Physics "UNIPRESS", The Polish Academy of Sciences, Warsaw, Poland

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Academic Career Length

38Years (1989-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 January 1992 in Physical Review B

Journal Article

Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressure

Perlin Piotr

Claude Jauberthie-Carillon

Jean Paul Itie

Alfonso San-Miguel

Izabella GRZEGORY

Alain Polian

Gallium nitride was studied by Raman scattering and x-ray-absorption spectroscopy up to 60 GPa. A high-pressure structural phase transition was observed in gallium nitride at 47 GPa by means of Raman scattering and x-ray-absorption spectroscopy. We also report the direct determination of the bulk modulus

B_{0}

of this compound (245 GPa). Grüneisen parameters of the four observed phonon modes were established. The transition pressure is compared with existing calculations.

10 July 1995 in Physical Review Letters

Journal Article

Towards the Identification of the Dominant Donor in GaN

Perlin Piotr

T. Suski

Teisseyre Henryk

M. Leszczynski

Izabella GRZEGORY

T. D. Moustakas

We analyze optical absorption, transmission, luminescence, and Raman scattering in

n

-type GaN at hydrostatic pressures up to 30 GPa. The results show freeze-out of free electrons above

\sim 20 GPa

due to trapping at levels that are resonant at ambient pressure but become gap states at high pressures. Ab initio calculations show that both the N vacancy and the Ga interstitial undergo this transition at

\sim 20 GPa

, but the vacancy should be more abundant. The pressure dependence of the yellow luminescence indicates that a transition between a shallow donor and a deep acceptor is involved.

19 May 1997 in Physical Review Letters

Journal Article

Pressure Induced Deep Gap State of Oxygen in GaN

C. Wetzel

T. Suski

J. W. Ager Iii

E. R. Weber

E. E. Haller

Perlin Piotr

O and Si donors in GaN are studied by Raman spectroscopy under hydrostatic pressure

p

. The ground state of O is found to transfer from a shallow level to a deep gap state at

p > 20 GPa

reminiscent of DX centers in GaAs. Transferred to

{Al}_{x} {Ga}_{1 - x} N

we predict that O induces a deep gap state for

x > 0.40

. In GaN:Si no such state is induced up to the highest pressure obtained

(p = 25 GPa)

equivalent to

x = 0.56

{Al}_{x} {Ga}_{1 - x} N

and possibly higher. We attribute this distinction to the lattice sites of the dopants. O substituting for N is found to be the origin of high free electron concentration in bulk GaN crystals.

15 October 1994 in Journal of Applied Physics

Journal Article

Thermal expansion of gallium nitride

M. Leszczynski

T. D. Moustakas

Lattice constants of gallium nitride (wurzite structure) have been measured at temperatures 294–753 K. The measurements were performed by using x-ray diffractometry. Two kinds of samples were used: (1) bulk monocrystal grown at pressure of 15 kbar, (2) epitaxial layer grown on a sapphire substrate. The latter had a smaller lattice constant in a direction parallel to the interface plane by about 0.03%. This difference was induced by a higher thermal expansion of the sapphire with respect to the GaN layer. However, this thermal strain was created mainly at temperatures below 500–600 K. Above these temperatures the lattice mismatch in parallel direction diminished to zero at a temperature of about 800 K.

23 October 1995 in Applied Physics Letters

Journal Article

Investigation of longitudinal-optical phonon-plasmon coupled modes in highly conducting bulk GaN

J. Camassel

J. C. Chervin

We report a cross‐correlated investigation, performed by means of Raman scattering and infrared spectroscopy, of coupled LO phonon‐plasmon modes in bulk GaN. Using different samples with different (high) residual concentrations of free carriers, we find that the high‐energy Raman mode follows closely the plasma frequency resolved from the infrared data. On the opposite, the low‐frequency modes appears down shifted, with respect to the standard TO phonon frequency, by about 11 cm⁻¹. Both findings agree satisfactorily with predictions of the linear response theory for undamped phonon‐plasmon modes and establish Raman scattering as a powerful and nondestructive tool to investigate the residual doping level of GaN up to about 10²⁰ cm⁻³ .

9 October 1995 in Applied Physics Letters

Journal Article

Mechanism of yellow luminescence in GaN

T. Suski

Perlin Piotr

Teisseyre Henryk

M. Leszczyński

Izabella GRZEGORY

T. D. Moustakas

We investigated the pressure behavior of yellow luminescence in bulk crystals and epitaxial layers of GaN. This photoluminescence band exhibits a blueshift of 30±2 meV/GPa for pressures up to about 20 GPa. For higher pressure we observe the saturation of the position of this luminescence. Both effects are consistent with the mechanism of yellow luminescence caused by electron recombination between the shallow donor (or conduction band) and a deep gap state of donor or acceptor character.

About Me

Piotr Perlin graduated from the Department of Physics, University of Warsaw, in 1984. Since 1985, he has been employed as a research associate at the Center for High Pressure Research of the Polish Academy of Sciences. He received his PhD degree from the Institute of Physics, Polish Academy of Sciences, in 1993. From 1995 to 1997, he was employed by the University of New Mexico, USA, as a research associate and senior research engineer, studying the physics of GaN-based optoelectronic devices. From 1997 to 1998, he worked at the University of California at Berkeley. He has been an assistant professor at the Center for High Pressure Research in Warsaw since 1999. In 2002, he received his habilitation from the Institute of Physics Polish Academy of Sciences. In 2010, he has rewarded the title of full professor of physics at the Institute of High Pressure Physics. He is also the CTO of TopGaN Ltd. His research topics mainly include nitride-based laser diodes, laser diode arrays, superluminescent diodes, and physics carrier recombination in nitride quantum structures.

Prof. Dr. Perlin Piotr

Prof. Dr. Perlin Piotr

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