In the race towards high-performance ultra-scaled devices, two-dimensional materials offer an alternative paradigm thanks to their atomic thickness suppressing short-channel effects. It is thus urgent to study the most promising candidates in realistic configurations, and here we present detailed multiscale simulations of field-effect transistors based on arsenene and antimonene monolayers as channels. The accuracy of first-principles approaches in describing electronic properties is combined with the efficiency of tight-binding Hamiltonians based on maximally localized Wannier functions to compute the transport properties of the devices. These simulations provide for the first time estimates on the upper limits for the electron and hole mobilities in the Takagi’s approximation, including spin–orbit and multi-valley effects, and demonstrate that ultra-scaled devices in the sub-10-nm scale show a performance that is compliant with industry requirements.

A set of design criteria for the radio-frequency (RF) section of long-range passive RF identification (RFID) transponders operating in the 2.45-GHz or 868-MHz industrial, scientific, and medical (ISM) frequency ranges is derived in this paper, focusing in particular on the voltage multiplier, the power-matching network, and the backscatter modulation. The paper discusses the design tradeoffs between the error probability at the reader receiver and the converted RF-dc power at the transponder, determining the regions of the design space that allow optimization of the operating range and the data rate of the RFID system.

We present an atomistic 3-D simulation of graphene nanoribbon field-effect transistors (GNR-FETs), based on the self consistent solution of the 3-D Poisson and Schrodinger equations with open boundary conditions within the nonequilibrium Green's function formalism and a tight-binding Hamiltonian. With respect to carbon nanotube FETs, GNR-FETs exhibit comparable performance, reduced sensitivity to the variability of channel chirality, and similar leakage problems due to band-to-band tunneling. Acceptable transistor performance requires prohibitive effective nanoribbon width of 1-2 nm and atomistic precision that could in principle be obtained with periodic etch patterns or stress patterns.