A 1.5-V 100-mA capacitor-free CMOS low-dropout regulator (LDO) for system-on-chip applications to reduce board space and external pins is presented. By utilizing damping-factor-control frequency compensation on the advanced LDO structure, the proposed LDO provides high stability, as well as fast line and load transient responses, even in capacitor-free operation. The proposed LDO has been implemented in a commercial 0.6-μm CMOS technology, and the active chip area is 568 μm×541 μm. The total error of the output voltage due to line and load variations is less than ±0.25%, and the temperature coefficient is 38 ppm/°C. Moreover, the output voltage can recover within 2 μs for full load-current changes. The power-supply rejection ratio at 1 MHz is -30 dB, and the output noise spectral densities at 100 Hz and 100 kHz are 1.8 and 0.38 μV//spl radic/Hz, respectively.

An output-capacitorless low-dropout regulator (LDO) compensated by a single Miller capacitor is implemented in a commercial 90-nm CMOS technology. The proposed LDO makes use of the small transistors realized in nano-scale technology to achieve high stability, fast transient performance and small voltage spikes under rapid load-current changes without the need of an off-chip capacitor connected at the LDO output. Experimental result verifies that the proposed LDO is stable for a capacitive load from 0 to 50 pF (estimated equivalent parasitic capacitance from load circuits) and with load capability of 100 mA. Moreover, the gain-enhanced structure provides sufficient loop gain to improve line regulation to 3.78 mV/V and load regulation to 0.1 mV/mA, respectively. The embedded voltage-spike detection circuit enables pseudo Class-AB operation to drive the embedded power transistor promptly. The measured power consumption is only 6 μW under a 0.75-V supply. The maximum overshoot and undershoot under a 1.2-V supply are less than 66 mV for full load current changes within 100-ns edge time, and the recovery time is less than 5 μs.

Frequency-compensation techniques of single-, two- and three-stage amplifiers based on Miller pole splitting and pole-zero cancellation are re-analyzed. The assumptions made, transfer functions, stability criteria, bandwidths, and important design issues of most of the reported topologies are included. Several proposed methods to improve the published topologies are given. In addition, simulations and experimental results are provided to verify the analysis and to prove the effectiveness of the proposed methods.

An output-capacitorless low-dropout regulator (LDO) with a direct voltage-spike detection circuit is presented in this paper. The proposed voltage-spike detection is based on capacitive coupling. The detection circuit makes use of the rapid transient voltage at the LDO output to increase the bias current momentarily. Hence, the transient response of the LDO is significantly enhanced due to the improvement of the slew rate at the gate of the power transistor. The proposed voltage-spike detection circuit is applied to an output-capacitorless LDO implemented in a standard 0.35-¿m CMOS technology (where V_THN ¿ 0.5 V and V_THP ¿ -0.65 V). Experimental results show that the LDO consumes 19 ¿A only. It regulates the output at 0.8 V from a 1-V supply, with dropout voltage of 200 mV at the maximum output current of 66.7 mA. The voltage spike and the recovery time of the LDO with the proposed voltage-spike detection circuit are reduced to about 70 mV and 3 ¿s, respectively, whereas they are more than 420 mV and 30 ¿s for the LDO without the proposed detection circuit.

A novel damping-factor-control frequency compensation (DFCFC) technique is presented in this paper with detailed theoretical analysis, This compensation technique improves frequency response, transient response, and power supply rejection for amplifiers, especially when driving large capacitive loads, Moreover, the required compensation capacitors are small and can be easily integrated in commercial CMOS process. Amplifiers using DFCPC and nested Miller compensation (NMC) driving two capacitive loads, 100 and 1000 pF, were fabricated using a 0.8-/spl mu/m CMOS process with V/sub tn/=0.72 V and V/sub tp/=-0.75 V. For the DFCFC amplifier driving a 1000-pF load, a 1-MHz gain-bandwidth product, 51/spl deg/ phase margin, 0.33-V//spl mu/s slew rate, 3.54-/spl mu/s settling time, and 426-/spl mu/W power consumption are obtained with integrated compensation capacitors. Compared to the NMC amplifier, the frequency and transient responses of the DFCFC amplifier are improved by one order of magnitude with insignificant increase of the power consumption.

A high-order curvature-compensated CMOS bandgap reference, which utilizes a temperature-dependent resistor ratio generated by a high-resistive poly resistor and a diffusion resistor, is presented in this paper. Implemented in a standard 0.6-μm CMOS technology with V/sub thn//spl ap/|V/sub thp/|/spl ap/0.9 V at 0°C, the proposed voltage reference can operate down to a 2-V supply and consumes a maximum supply current of 23 μA. A temperature coefficient of 5.3 ppm/°C at a 2-V supply and a line regulation of ±1.43 mV/V at 27°C are achieved. Experimental results show that the temperature drift is reduced by approximately five times when compared with a conventional bandgap reference in the same technology.