Most photovoltaic absorbers are identified using the standard Shockley-Queisser selection principle which relies on optimal band-gap values. However, this criterion has been shown to be insufficient, as many materials with appropriate values still perform badly. Here, we have employed calculations based on the density functional theory to assess three copper oxides as potential photovoltaic materials: ${\mathrm{Cu}}_2\mathrm{O}$, ${\mathrm{Cu}}_4{\mathrm{O}}_3$, and $\mathrm{CuO}$. Despite their promising theoretical solar power conversion efficiency of over 20%, experimental values are found to be far lower. Theoretical evaluation of the electronic and optical properties reveals that certain transitions within the band structures are dipole forbidden, whereas the fundamental band gaps of ${\mathrm{Cu}}_4{\mathrm{O}}_3$ and $\mathrm{CuO}$ are of indirect nature. These findings correlate to the weak and shifted absorption properties found experimentally, which underpin the inefficient light capture by copper oxides. Based on these results and an applied extended selection metric, we can explain why copper oxides are unable to reach the efficiencies previously proposed theoretically and why we need to revise their maximum conversion values.

CuO (cupric oxide) is a well-known $p$-type semiconductor, suitable for solar cell photovoltaic applications. However, due to the easy formation of defects and Cu-rich layers at the copper(II) oxide heterointerface, commercial application is yet to be successfully implemented. Density functional theory calculations have been employed to study the formation of intrinsic defects and their effect on the electronic properties of CuO. Native impurities were observed, depending on the synthesis conditions, to render the conductivity to $p$-type or $n$-type at a low energetic cost, yet with states embedded deep in the electronic band gap. Respective defect pairs, effectively determining the majority charge carriers, were observed to cluster in near proximity of each other, lowering the formation energy substantially. Hydrogen passivation was illustrated to have a positive effect on deep defect states in $p$-type CuO, without affecting the $n$-type counterpart. Outlined results were found to support the experimentally observed low photoresponse of CuO and further illustrate some of the difficulties related with achieving high-performance samples.

Photocatalysis, a promising solution to environmental challenges, relies on the generation and utilization of photogenerated charge carriers within photocatalysts. However, the recombination of these carriers often limits efficiency. Heterostructures, especially Cu₂O/TiO₂, have emerged as effective solutions to enhance charge separation. This study systematically explores the effect of interfacial morphologies on the band bending within Cu₂O/TiO₂ anatase heterostructures by employing density functional theory. Through this study, eight distinct interfaces are identified and analyzed, revealing a consistent staggered-type band alignment. Despite variations in band edge positions, systematic charge transfer from Cu₂O to TiO₂ is observed across all interfaces. The proposed band bending configurations would suggest enhanced charge separation and photocatalytic activity under ultraviolet illumination due to a Z-scheme configuration. This theoretical investigation provides valuable insights into the interplay between interfacial morphology, band bending, and charge transfer for advancing the understanding of fundamental electronic mechanisms in heterostructures.

Metal sulphides, including zinc sulphide (ZnS), are semiconductor photocatalysts that have been investigated for the photocatalytic degradation of organic pollutants as well as their activity during the hydrogen evolution reaction and water splitting. However, devising ZnS photocatalysts with a high overall quantum efficiency has been a challenge due to the rapid recombination rates of charge carriers. Various strategies, including the control of size and morphology of ZnS nanoparticles, have been proposed to overcome these drawbacks. In this work, ZnS samples with different morphologies were prepared from zinc and sulphur powders via a facile hydrothermal method by varying the amount of sodium borohydride used as a reducing agent. The structural properties of the ZnS nanoparticles were analysed by X-ray diffraction (XRD), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS) techniques. All-electron hybrid density functional theory calculations were employed to elucidate the effect of sulphur and zinc vacancies occurring in the bulk as well as (220) surface on the overall electronic properties and absorption of ZnS. Considerable differences in the defect level positions were observed between the bulk and surface of ZnS while the adsorption of NaBH₄ was found to be highly favourable but without any significant effect on the band gap of ZnS. The photocatalytic activity of ZnS was evaluated for the degradation of rhodamine B dye under UV irradiation and hydrogen generation from water. The ZnS nanoparticles photo-catalytically degraded Rhodamine B dye effectively, with the sample containing 0.01 mol NaBH₄ being the most efficient. The samples also showed activity for hydrogen evolution, but with less H₂ produced compared to when untreated samples of ZnS were used. These findings suggest that ZnS nanoparticles are effective photocatalysts for the degradation of rhodamine B dyes as well as the hydrogen evolution, but rapid recombination of charge carriers remains a factor that needs future optimization.

Well designed and optimized epitaxial heterostructures lie at the foundation of materials development for photovoltaic, photocatalytic, and photoelectrochemistry applications. Heterostructure materials offer tunable control over charge separation and transport at the same time preventing recombination of photogenerated excitations at the interface. Thus, it is of paramount importance that a detailed understanding is developed as the basis for further optimization strategies and design. Oxides of copper are nontoxic, low cost, abundant materials with a straightforward and stable manufacturing process. However, in individual applications, they suffer from inefficient charge transport of photogenerated carriers. Hence, in this work, we investigate the role of the interface between epitaxially aligned CuO and Cu₂O to explore the potential benefits of such an architecture for more efficient electron and hole transfer. The CuO/Cu₂O heterojunction nature, stability, bonding mechanism, interface dipole, electronic structure, and band bending were rationalized using hybrid density functional theory calculations. New electronic states are identified at the interface itself, which are originating neither from lattice mismatch nor strained Cu-O bonds. They form as a result of a change in coordination environment of CuO surface Cu²⁺ cations and an electron transfer across the interface Cu¹⁺-O bond. The first process creates occupied defect-like electronic states above the valence band, while the second leaves hole states below the conduction band. These are constitutional to the interface and are highly likely to contribute to recombination effects competing with the improved charged separation from the suitable band bending and alignment and thus would limit the expected output photocurrent and photovoltage. Finally, a favorable effect of interstitial oxygen defects has been shown to allow for band gap tunability at the interface but only to the point of the integral geometrical contact limit of the heterostructure itself.