We demonstrate record direct modulation bandwidths from MBE-grown In/sub 0.35/Ga/sub 0.65/As-GaAs multiple-quantum-well lasers with undoped active regions and with the upper and lower cladding layers grown at different growth temperatures. Short-cavity ridge waveguide lasers achieve CW direct modulation bandwidths up to 40 GHz for 6/spl times/130 /spl mu/m/sup 2/ devices at a bias current of 155 mA, which is the damping limit for this structure. We further demonstrate large-signal digital modulation up to 20 Gb/s (limited by the measurement setup) and linewidth enhancement factors of 1.4 at the lasing wavelength at threshold of /spl sim/1.1 /spl mu/m for these devices.

A visible light communication (VLC) system using an organic bulk heterojunction photodetector (OPD) is presented. The system has been successfully proven indoors with an audio signal. The emitter consists of three commercial high-power white LEDs connected in parallel. The receiver is based on an organic photodetector having as active layer a blend of poly(3-hexylthiophene) (P3HT) and phenyl C61-butyric acid methyl ester (PCBM). The OPD is opto-electrically characterized, showing a responsivity of 0.18 A/W and a modulation response of 790 kHz at −6 V.

We have developed a simple model for the carrier capture and escape processes in quantum-well (QW) lasers, which yields an analytical expression for the ratio of the carrier capture and escape times. It predicts a decrease in the escape time with injected carrier density due to the state filling effect. It also shows an exponential dependence of the escape time on the effective barrier height and on the inverse of the temperature. A comparison between experimental and calculated values for InGaAs/GaAs QW lasers is presented showing a good agreement.

Visible light communication systems can be used in a wide variety of applications, from driving to home automation. The use of wearables can increase the potential applications in indoor systems to send and receive specific and customized information. We have designed and developed a fully organic and flexible Visible Light Communication system using a flexible OLED, a flexible P3HT:PCBM-based organic photodiode (OPD) and flexible PCBs for the emitter and receiver conditioning circuits. We have fabricated and characterized the I-V curve, modulation response and impedance of the flexible OPD. As emitter we have used a commercial flexible organic luminaire with dimensions 99 × 99 × 0.88 mm, and we have characterized its modulation response. All the devices show frequency responses that allow operation over 40 kHz, thus enabling the transmission of high quality audio. Finally, we integrated the emitter and receiver components and its electronic drivers, to build an all-organic flexible VLC system capable of transmitting an audio file in real-time, as a proof of concept of the indoor capabilities of such a system.

Halide perovskites (HPs) are promising materials for memristor devices because of their unique characteristics. In this study, nonvolatile resistive switching memory devices based on thick MAPbI₃ perovskite (800 nm) films with structure FTO/MAPbI₃/polymethyl methacrylate (PMMA)/Ag are presented. Reproducible and reliable bipolar switching characteristics are demonstrated with an ultra‐low operating voltage (−0.1 V), high ON/OFF ratio (10⁶), endurance (>2 × 10³ times) and a record retention time (>10⁵ s). The I–V curve of the first cycle exhibits self‐formed conductive filaments. These are attributed to the presence of metallic Pb resulting from an excess of PbI₂ in the perovskite film. The subsequent activation process involves the formation of conductive filaments, consisting of either iodide vacancies or migrated charged metals. Numerical simulations are then carried out to understand the nature of these conductive filaments and the role of the internal electric field in the migration of iodide ions, iodide vacancies, and Ag cations. Finally, an exhaustive model is proposed that explains the set and reset processes governing the first voltage cycle and the steady state, at different voltage ranges. In summary, this work offers a novel and thorough perspective of the complete resistive switching (RS) behavior in a MAPbI₃/buffer/Ag memristor, supported by numerical simulations.