Halide ion exchange seen in metal halide perovskites provide a substantial opportunity to control their halide composition and corresponding optoelectronic properties. Halide ion mixing across colloidal 3D perovskite nanocrystals have been extensively studied while the mixing within colloidal 2D counterparts remain underexplored. In this study, the halide ion exchange kinetics across colloidally stable 2D Ruddlesden‐Popper layered bromide (Br) and iodide (I) perovskites using two different spacer ligands such as aromatic phenethylammonium (PEA) versus linear butyammonium (BA) is demonstrated. The halide exchange kinetic rate constant (k), as determined by tracking time‐dependent absorbance changes, indicates that Br/I halide mixing in 2D PEA‐based perovskites (2.7 × 10⁻³ min⁻¹) occurs at an order of magnitude slower than in 2D BA‐based perovskites (3.3 × 10⁻² min⁻¹). Concentration (≈1 mM to 100 mM) and temperature‐dependent (50 to 80 °C) kinetic studies further allow for the determination of activation barrier for halide ion mixing across the 2D layered perovskites with 75.2 ± 4.4 kJ mol⁻¹ (2D PEA) and 57.8 ± 7.8 kJ mol⁻¹ (2D BA), respectively. The activation energy reveals that the type of spacer cations plays a crucial role in controlling the halide ion mobility and halide stability due mainly to the internal ligand chemical interaction within 2D structures.

Control over the magnetic interactions in magnetic nanoparticles (MNPs) is a crucial issue to the future development of nanometer-sized integrated “spintronic” applications. Here, we have developed a nanohybrid structure to achieve room temperature ferromagnetism, via a facile, effective, and reproducible solvothermal synthesis method. The plan has been put onto cobalt (Co) NPs, where the growth of Co NPs on the surface of reduced graphene oxide (rGO) nanosheets switches the magnetic interactions from superparamagnetic to ferromagnetic at room temperature. Switching-on ferromagnetism in this nanohybrid may be due to the hybridization between unsaturated 2p_z orbitals of graphene and 3d orbitals of Co, which promotes ferromagnetic long-range ordering. The ferromagnetic behavior of Co-rGO nanohybrid makes it excellent material in the field of spintronics, catalysis, and magnetic resonance imaging.

The present work reports nanocomposite of CdSe/V ₂ O ₅ core–shell quantum dots with reduced graphene oxide (rGO-V-CdSe), as an efficient lightweight electromagnetic wave shielding material, synthesized by a simplistic solvothermal approach. The as-synthesized nanocomposite was analyzed for its structural, compositional and morphological features by x-ray diffraction (XRD), transmission electron microscopy (TEM), Raman spectroscopy and x-ray photoelectron spectroscopy (XPS). The measurement of complex permittivity/permeability and total shielding efficiency of the as-synthesized samples has been done in a wide frequency range of 8–12 GHz (X-band). Compared to rGO and rGO-CdSe, rGO-V-CdSe nanocomposite exhibits significantly enhanced EMI shielding properties in terms of both dielectric loss and total shielding SE _T . The high value of real permittivity (average ε ′∼70) and the overall shielding effectiveness up to ∼38 dB have been recorded for rGO-V-CdSe nanocomposite. The studies also infer that the absorption contributes more in total shielding than reflection. The high value of dielectric loss and shielding effectiveness could also be attributed to the presence of various defects leading to dipolar and interfacial polarizations. The excellent EMI shielding properties of the nanocomposite in GHz frequency range (X-band) pave an intuitive way for fabricating a versatile EMI shielding nanocomposite material for applications.

Highly luminescent ternary Zn–Ga–S quantum dots (QDs) were synthesized via a noninjection method by varying Zn/Ga ratios. X-ray diffraction and Raman investigations demonstrate composition-dependent changes with multiple phases including ZnGa₂S₄, ZnS, and Ga₂S₃ in all samples. Two distinct excitation pathways were identified from absorption and photoluminescence excitation spectra; among them, one is due to the band-gap transition appearing at around 375 and 395 nm, whereas another one observed nearby 505 nm originates from sub-band-gap defect states. Photoluminescence (PL) spectra of these QDs depict multiple emission noticeable at around 410, 435, 461, and 477 nm arising from crystallographic point defects formed within the band gap. The origin of these defects including zinc interstitials (I_Zn), zinc vacancies (V_Zn), sulfur interstitials (I_S), sulfur vacancies (V_S), and gallium vacancies (V_Ga) has been discussed in detail by proposing an energy-level diagram. Further, the time-dependent PL decay curve strongly suggests that the tail emission (appear around 477 nm) in these ternary QDs arises due to donor–acceptor pair recombination. This study enables us to understand the PL mechanism in new series of Zn–Ga–S ternary QDs and can be useful for the future utilization of these QDs in photovoltaic and display devices.