Short channel device performance of deep-submicron gate length oxide thin film transistor (TFT) with amorphous InGaZnO (a-IGZO) active semiconductor is presented. Remarkable electrical properties of short channel oxide TFT were achieved utilizing crucial structure and material optimization such as self aligned gate structure with homo junction, multi-channel with rounded corners, and high-κ gate dielectric. It was found that various device performance parameters of short channel-oxide TFTs were significantly influenced by materials, processes, and structural geometry, which should be more carefully designed.

This study proposes a non-enzymatic glucose sensor fabricated by synthesizing high-purity TiO₂ nanoparticles in thermal plasma and depositing it directly on a substrate and then depositing chitosan–polypyrrole (CS-PPy) conductive polymer films by electrochemical method. The structural properties of the deposited TiO₂ nanoparticles were analyzed by X-ray diffraction (XRD) and dynamic light scattering (DLS) system. The chemical composition and structural properties of the TiO₂ nanoparticle layer and the conductive polymer films were confirmed by X-ray photoelectron spectroscopy (XPS) spectra and scanning electron microscope (SEM). The glucose detection characteristics of the fabricated biosensor were determined by cyclic voltammetry (CV). CS-PPy/TiO₂ biosensor showed high sensitivity of 302.0 µA mM⁻¹ cm⁻² (R² = 0.9957) and low detection limit of 6.7 μM. The easily manufactured CS-PPy/TiO₂ biosensor showed excellent selectivity and reactivity.

Bioelectrodes mediated by metal oxide nanoparticles have facilitated the development of new sensors in medical diagnosis. High-purity TiO₂ nanoparticles (NPs) were synthesized through thermal plasma and deposited directly on an interdigitated electrode. The surface of the TiO₂-deposited electrode was activated with (3-aminopropyl) triethoxysilane (APTES) followed by fixing the single-stranded probe deoxyribonucleic acid (DNA) to fabricate the DNA biosensor. The structural properties of the deposited TiO₂ nanoparticles were analyzed using a transmission electron microscope (TEM), X-ray diffraction (XRD), and a dynamic light scattering (DLS) system. The chemical composition and structural properties of the TiO₂ nanoparticle layer and the fixed layer were analyzed by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). E. coli O157:H7, a well-known pernicious pathogenic bacterial species, was detected as a target DNA of the prepared DNA biosensor, and the characteristics of DNA detection were determined by the current change using a picoammeter. The degree of binding between the probe DNA and the target DNA was converted into an electrical signal using the picoammeter method to quantitatively analyze the concentration of the target DNA. With the specificity experiment, it was confirmed that the biosensor was able to discriminate between nucleotides with mismatched, non-complementary, or complementary sequences.

In recent years, MoS₂ has emerged as a prime material for photodetector as well as phototransistor applications. Usually, the higher density of state and relatively narrow bandgap of multi-layer MoS₂ give it an edge over monolayer MoS₂ for phototransistor applications. However, MoS₂ demonstrates thickness-dependent energy bandgap properties, with multi-layer MoS₂ having indirect bandgap characteristics and therefore possess inferior optical properties. Herein, we investigate the electrical as well as optical properties of single-layer and multi-layer MoS₂-based phototransistors and demonstrate improved optical properties of multi-layer MoS₂ phototransistor through the use of see-through metal electrode instead of the traditional global bottom gate or patterned local bottom gate structures. The see-through metal electrode utilized in this study shows transmittance of more than 70% under 532 nm visible light, thereby allowing the incident light to reach the entire active area below the source and drain electrodes. The effect of contact electrodes on the MoS₂ phototransistors was investigated further by comparing the proposed electrode with conventional opaque electrodes and transparent IZO electrodes. A position-dependent photocurrent measurement was also carried out by locally illuminating the MoS₂ channel at different positions in order to gain better insight into the behavior of the photocurrent mechanism of the multi-layer MoS₂ phototransistor with the transparent metal. It was observed that more electrons are injected from the source when the beam is placed on the source side due to the reduced barrier height, giving rise to a significant enhancement of the photocurrent.

In this study, we fabricate a thermally stable triple- <mml:math display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">Ti</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi mathvariant="normal">Al</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:math>Ti1−xAlxN metal gate for potential use in p-type metal-oxide-semiconductor devices and analyze the impact of Al concentrations in an atomic-layer-deposited <mml:math display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">Ti</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi mathvariant="normal">Al</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:math>Ti1−xAlxN film on the effective work function and the resistivity of the <mml:math display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">Ti</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi mathvariant="normal">Al</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:math>Ti1−xAlxN metal gate. An increase in the Al content in the <mml:math display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">Ti</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi mathvariant="normal">Al</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:math>Ti1−xAlxN film causes an increase in the resistivity of the <mml:math display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">Ti</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi mathvariant="normal">Al</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:math>Ti1−xAlxN film metal gate while improving the thermal stability of the metal gate. By combining the positive effects in terms of the work function and the resistivity, we prepared a triple-layer <mml:math display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">Ti</mml:mi><mml:mrow><mml:mn>0.75</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mi mathvariant="normal">Al</mml:mi><mml:mrow><mml:mn>0.25</mml:mn></mml:mrow></mml:msub><mml:mi mathvariant="normal">N</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Ti</mml:mi><mml:mi mathvariant="normal">N</mml:mi><mml:mo>∕</mml:mo><mml:msub><mml:mi mathvariant="normal">Ti</mml:mi><mml:mrow><mml:mn>0.75</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mi mathvariant="normal">Al</mml:mi><mml:mrow><mml:mn>0.25</mml:mn></mml:mrow></mml:msub><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:math>Ti0.75Al0.25N∕TiN∕Ti0.75Al0.25N metal gate, which exhibits a work function of <mml:math display="inline"><mml:mrow><mml:mn>5.04</mml:mn><mml:mspace width="0.3em"></mml:mspace><mml:mi>eV</mml:mi></mml:mrow></mml:math>5.04eV and resistivity of <mml:math display="inline"><mml:mrow><mml:mn>686</mml:mn><mml:mspace width="0.3em"></mml:mspace><mml:mi>μ</mml:mi><mml:mi>Ω</mml:mi><mml:mspace width="0.3em"></mml:mspace><mml:mi>cm</mml:mi></mml:mrow></mml:math>686μΩcm after thermal annealing at <mml:math display="inline"><mml:mrow><mml:mn>900</mml:mn><mml:mo>°</mml:mo><mml:mi mathvariant="normal">C</mml:mi></mml:mrow></mml:math>900°C in <mml:math display="inline"><mml:msub><mml:mi mathvariant="normal">N</mml:mi><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math>N2 for <mml:math display="inline"><mml:mrow><mml:mn>30</mml:mn><mml:mspace width="0.3em"></mml:mspace><mml:mi mathvariant="normal">s</mml:mi></mml:mrow></mml:math>30s , making it suitable for use as a metal gate in pMOS field-effect transistors.