The electron- and hole-transport properties in cadmium zinc telluride selenide (CZTS) crystals are studied using a laser-induced transient-current technique with pulsed and dc bias. The internal electric field profile and velocity of surface recombination are determined by Monte Carlo simulations of electron and hole transient currents combined with a numerical solution of the drift-diffusion equation coupled with Poisson’s equation. Electron and hole drift mobilities of ${\mu }_e$ = 830 ${\mathrm{cm}}^2$/Vs and ${\mu }_h$ = 40 ${\mathrm{cm}}^2$/Vs, respectively, are determined. We also develop a simple technique for evaluating surface recombination directly from measured current waveforms without the need for numerical simulation. The good quality of the prepared detector at pulsed bias, with electron- and hole-mobility-lifetime products of $(\mu \tau {)}_e$ = 1.9 × ${10}^{-3}$ ${\mathrm{cm}}^2$/V and $(\mu \tau {)}_h$ = 1.4 × ${10}^{-4}$ ${\mathrm{cm}}^2$/V, respectively, are observed. The formation of a positive space charge, originating from hole injection combined with a recombination level, is found. We observe a significant position dependence of the lifetime of electrons and holes in dc bias due to hole injection. The experiment is successfully fitted by a simple model dominated by a single deep recombination level with an energy of $E_t=E_C-0.73\mathrm{eV}$; concentration of 7.3 × ${10}^{11}$ ${\mathrm{cm}}^{-3}$; and electron- and hole-capture cross sections of 3.5 × ${10}^{-14}{\mathrm{cm}}^2$ and 6.5 × ${10}^{-14}{\mathrm{cm}}^2$, respectively.

The performance of the CdTe radiation detectors heavily relies on the method of contact preparation. A convenient research method addressing this problem is the laser-induced transient current technique. In this paper, we compare the performance of two CdTe crystals which underwent different metallization processes. We showed that appropriately designed Au/Al contacts induce much less bulk polarization than commercial Pt/In electrodes under the same working conditions and can thus provide a convenient alternative to the industry standard. The comparison was based on the monitoring of the time-dependent sensor polarization measuring transient currents excited by above-bandgap laser illumination complemented by the Am 241 gamma spectroscopy. The theoretical analysis of current waveforms and radiation spectra enabled us to determine the charge carrier mobility, mobility-lifetime products of electrons and holes, and temporal and bias dependence of the space charge formation.

Semi-insulating CdTe and CdZnTe crystals fabricated into pixelated sensors and integrated into radiation detection modules have demonstrated a remarkable ability to operate under rapidly changing X-ray irradiation environments. Such challenging conditions are required by all photon-counting-based applications, including medical computed tomography (CT), airport scanners, and non-destructive testing (NDT). Although, maximum flux rates and operating conditions differ in each case. In this paper, we investigated the possibility of using the detector under high-flux X-ray irradiation with a low electric field satisfactory for maintaining good counting operation. We numerically simulated electric field profiles visualized via Pockels effect measurement in a detector affected by high-flux polarization. Solving coupled drift–diffusion and Poisson’s equations, we defined the defect model, consistently depicting polarization. Subsequently, we simulated the charge transport and evaluated the collected charge, including the construction of an X-ray spectrum on a commercial 2-mm-thick pixelated CdZnTe detector with 330 µm pixel pitch used in spectral CT applications. We analyzed the effect of allied electronics on the quality of the spectrum and suggested setup optimization to improve the shape of the spectrum.

In this work, we studied the free-carrier transport properties and space-charge formation/polarization in a CdZnTe bar-shaped radiation detector using the Laser-Induced Transient Current technique. We found out that a steady-state space charge ranging from 8 × 108 to 2.1 × 109 cm−3 is formed throughout the detector at about 0.5 s following biasing. The measured current waveforms were modeled by Monte Carlo simulations after taking into account the electric and weighting fields inside the detector and shielding box. Modeling of the unpolarized waveforms revealed an exceptionally high electron mobility-lifetime product μeτe≥0.095cm2V−1. The observed formation of positive space charge in the biased detector and linear scaling of the current waveform shapes on applied bias revealed that the detector polarization is attributed to carrier injection at the anode. Measurements in pulsed and DC bias in modified electrode geometry proved the surface-charge formation.

Laser-induced transient currents were measured after applying pulsed or direct-current bias to a CdZnTe quasi-hemispherical radiation detector with gold contacts. The temporal evolution of current transients was analyzed to evaluate the dynamics of the space charge formation and its spatial distribution. The observed effects were explained by a model involving hole injection from positively biased contacts. Experimental results were complemented by numerical simulations, which supported the model. This paper discusses how the detected phenomena affect the detector performance and proposes an improved detector design.

Interfaces and contacts critically influence the performance and stability of semiconductor devices, yet direct experimental access to charge accumulation and release processes near biased interfaces remains limited. Here, we introduce the Bias Polarity Switching (BiPS) technique as a transient method for probing carrier dynamics in the sub‐/micrometer‐scale near‐interface region under realistic operating conditions. We show that BiPS enables distinction between free‐ and trapped‐carrier contributions to the transient response, allowing extraction of carrier mobility, characteristic trapping and detrapping times, and an effective interfacial extraction rate. Applied to representative single‐crystal semiconductor systems with different contact configurations, including melt‐grown CsPbBr ₃ (Cr/Cr) and solution‐grown MAPbBr ₃ (Cr, SnO ₂ /Cr), BiPS reveals interfacial barriers that drive carrier accumulation and defect filling. CsPbBr ₃ exhibits long‐lived space charge densities in the order of ∼3 × 10 ¹¹ cm ⁻³ . Analysis of the BiPS transients yields trapping times of 1–100 µs, detrapping times of 20 µs–3 ms, and activation energies of 280–450 meV for interfacial defect states. Finally, a proof‐of‐feasibility experiment on CdZnTe demonstrates the feasibility of extending BiPS beyond perovskite materials.