This paper presents the results of the synthesis and evaluation of thick thermoelectric films that may be used for such applications as thermoelectric power generators. Two types of electrochemical deposition methods, constant and pulsed deposition with improved techniques for both N-type bismuth telluride (Bi₂Te₃) and P-type antimony telluride (Sb₂Te₃), are performed and compared. As a result, highly oriented Bi₂Te₃ and Sb₂Te₃ thick films with a bulk-like structure are successfully synthesized with high Seebeck coefficients and low electrical resistivities. Six hundred-micrometer-thick Bi₂Te₃ and 500-µm-thick Sb₂Te₃ films are obtained. The Seebeck coefficients for the Bi₂Te₃ and Sb₂Te₃ films are −150 ± 20 and 170 ± 20 µV/K, respectively. Additionally, the electrical resistivity for the Bi₂Te₃ is 15 ± 5 µΩm and is 25 ± 5 µΩm for the Sb₂Te₃. The power factors of each thermoelectric material can reach 15 × 10⁻⁴ W/mK² for Bi₂Te₃ and 11.2 × 10⁻⁴ W/mK² for Sb₂Te₃.

Although the electrochemical deposition of thermoelectric materials is a potential method for applications such as flexible thermoelectric power generators (FTEGs), to date the use of this technique is limited. This paper demonstrates a new fabrication of self-supported π -type FTEGs using electrochemical deposition of thermoelectric materials. Two types of the devices based on Bi ₂ Te ₃ –Cu and Bi ₂ Te ₃ –Sb ₂ Te ₃ have been fully completed and characterized. The Bi ₂ Te ₃ –Cu and Bi ₂ Te ₃ –Sb ₂ Te ₃ devices consist of 24 pairs of thermocouples that can harvest thermal energy with output power densities of 1–4 µ W cm ⁻² from temperature differences of approximately 2 °C–4 °C from the human body. The highly scalable and new devices demonstrated in this work open up opportunities for the applications of electrochemically deposited thermoelectric materials.

This work reports investigation on the deposition and evaluation of an aluminum-doped zinc oxide (AZO) thin film and its novel applications to micro- and nano-devices. The AZO thin film is deposited successfully by atomic layer deposition (ALD). 50 nm-thick AZO film with high uniformity is checked by scanning electron microscopy. The element composition of the deposited film with various aluminum dopant concentration is analyzed by energy-dispersive X-ray spectroscopy. In addition, a polycrystalline feature of the deposited film is confirmed by selected area electron diffraction and high-resolution transmission electron microscopy. The lowest sheet resistance of the deposited AZO film is found at 0.7 kΩ/□ with the aluminum dopant concentration at 5 at.%. A novel method employed the ALD in combination with the sacrificial silicon structures is proposed which opens the way to create the ultra-high aspect ratio AZO structures. Moreover, based on this finding, three kinds of micro- and nano-devices employing the deposited AZO thin film have been proposed and demonstrated. Firstly, nanowalled micro-hollows with an aspect ratio of 300 and a height of 15 µm are successfully produced . Secondly, micro- and nano-fluidics, including a hollow fluidic channel with a nanowall structure as a resonator and a fluidic capillary window as an optical modulator is proposed and demonstrated. Lastly, nanomechanical resonators consisting of a bridged nanobeam structure and a vertical nanomechanical capacitive resonator are fabricated and evaluated.

This paper presents processes for glass micromachining, including sandblast, wet etching, reactive ion etching (RIE), and glass reflow techniques. The advantages as well as disadvantages of each method are presented and discussed in light of the experiments. Sandblast and wet etching techniques are simple processes but face difficulties in small and high-aspect-ratio structures. A sandblasted 2 cm × 2 cm Tempax glass wafer with an etching depth of approximately 150 µm is demonstrated. The Tempax glass structure with an etching depth and sides of approximately 20 μm was observed via the wet etching process. The most important aspect of this work was to develop RIE and glass reflow techniques. The current challenges of these methods are addressed here. Deep Tempax glass pillars having a smooth surface, vertical shapes, and a high aspect ratio of 10 with 1-μm-diameter glass pillars, a 2-μm pitch, and a 10-μm etched depth were achieved via the RIE technique. Through-silicon wafer interconnects, embedded inside the Tempax glass, are successfully demonstrated via the glass reflow technique. Glass reflow into large cavities (larger than 100 μm), a micro-trench (0.8-μm wide trench), and a micro-capillary (1-μm diameter) are investigated. An additional optimization of process flow was performed for glass penetration into micro-scale patterns.