Mikhail Katsnelson

Dr. Mikhail Katsnelson

Institute for Molecules and Materials, Radboud University, Heyendaalseweg 135, 6525 AJ Nijmegen, The Netherlands
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Research Focus & Metrics

Academic Career Length

23Years (2004-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 April 2008 in Reviews of Modern Physics
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Mikhail KatsnelsonMikhail Katsnelson
Mikhail Katsnelson
VIValentin Irkhin
Valentin Irkhin
LCL. Chioncel
L. Chioncel
ALA. I. Lichtenstein
A. I. Lichtenstein
RGR. A. de Groot
R. A. de Groot
A review of new developments in theoretical and experimental electronic-structure investigations of half-metallic ferromagnets (HMFs) is presented. Being semiconductors for one spin projection and metals for another, these substances are promising magnetic materials for applications in spintronics (i.e., spin-dependent electronics). Classification of HMFs by the peculiarities of their electronic structure and chemical bonding is discussed. The effects of electron-magnon interaction in HMFs and their manifestations in magnetic, spectral, thermodynamic, and transport properties are considered. Special attention is paid to the appearance of nonquasiparticle states in the energy gap, which provide an instructive example of essentially many-body features in the electronic structure. State-of-the-art electronic calculations for correlated d-systems are discussed, and results for specific HMFs (Heusler alloys, zinc-blende structure compounds, CrO2, and Fe3O4) are reviewed.

30 May 2006 in The European Physical Journal B
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Mikhail KatsnelsonMikhail Katsnelson
Mikhail Katsnelson

29 October 2008 in Nano Letters
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DBD. W. Boukhvalov
D. W. Boukhvalov
Mikhail KatsnelsonMikhail Katsnelson
Mikhail Katsnelson

28 September 2010 in Physical Review B
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SYShengjun Yuan
Shengjun Yuan
HRHans De Raedt
Hans De Raedt
Mikhail KatsnelsonMikhail Katsnelson
Mikhail Katsnelson
We present a detailed numerical study of the electronic properties of single-layer graphene with resonant (hydrogen) impurities and vacancies within a framework of noninteracting tight-binding model on a honeycomb lattice. The algorithms are based on the numerical solution of the time-dependent Schrödinger equation and applied to calculate the density of states, quasieigenstates, ac and dc conductivities of large samples containing millions of atoms. Our results give a consistent picture of evolution of electronic structure and transport properties of functionalized graphene in a broad range of concentration of impurities (from graphene to graphane), and show that the formation of impurity band is the main factor determining electrical and optical properties at intermediate impurity concentrations, together with a gap opening when approaching the graphane limit.

19 July 2013 in Nano Letters
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DBDanil W. Boukhvalov
Danil W. Boukhvalov
Mikhail KatsnelsonMikhail Katsnelson
Mikhail Katsnelson
YSYoung-Woo Son
Young-Woo Son

13 July 2009 in The Journal of Physical Chemistry C
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DBDanil W. Boukhvalov
Danil W. Boukhvalov
Mikhail KatsnelsonMikhail Katsnelson
Mikhail Katsnelson