Lead-free Ba _1−x Sm _2x/3 Zr _0.15 Ti _0.85 O ₃ (BSZT) ceramics were synthesized by a solid state reaction route.

In order to improve the performance of transparent conductive Al-doped ZnO (AZO)/Cu/Al-doped ZnO multilayer thin films, multilayer thin films of titanium-embedded AZO/Cu/AZO structures have been designed and deposited onto flexible polycarbonate substrates to develop an indium-free transparent flexible electrode. The effect of Ti layer on the structural, optical, and electrical properties of multilayer thin films was investigated. The experiments reveal that the AZO/Ti/Cu/AZO fabricated in argon-oxygen mixtures has the best performance (commutation quality factor of 422.0): resistivity of $3.85\times {10}^{-5}\mathrm{\Omega }·\mathrm{cm}$, sheet resistance of $4.31\mathrm{\Omega }/\mathrm{sq}$, carrier concentration of $1.65\times {10}^{22}{\mathrm{cm}}^{-3}$, mobility of $9.87{\mathrm{cm}}^2/\mathrm{Vs}$, and acceptable luminous transmittance of above 82% in the visible range.