Water's surface dielectric: Theoretical studies predict that the inhibition of rotational motion of water near a solid surface will decrease its local dielectric constant. Fumagalli et al. fabricated thin channels in insulating hexagonal boron nitride on top of conducting graphene layers (see the Perspective by Kalinin). The channels, which varied in height from 1 to 300 nanometers, were filled with water and capped with a boron nitride layer. Modeling of the capacitance measurements made with an atomic force microscope tip revealed a surface-layer dielectric constant of 2, compared with the bulk value of 80 for water. Science , this issue p. 1339 ; see also p. 1302

The electric polarizability of DNA, represented by the dielectric constant, is a key intrinsic property that modulates DNA interaction with effector proteins. Surprisingly, it has so far remained unknown owing to the lack of experimental tools able to access it. Here, we experimentally resolved it by detecting the ultraweak polarization forces of DNA inside single T7 bacteriophages particles using electrostatic force microscopy. In contrast to the common assumption of low-polarizable behavior like proteins (ε_r ∼ 2–4), we found that the DNA dielectric constant is ∼8, considerably higher than the value of ∼3 found for capsid proteins. State-of-the-art molecular dynamic simulations confirm the experimental findings, which result in sensibly decreased DNA interaction free energy than normally predicted by Poisson–Boltzmann methods. Our findings reveal a property at the basis of DNA structure and functions that is needed for realistic theoretical descriptions, and illustrate the synergetic power of scanning probe microscopy and theoretical computation techniques. Significance The strength of DNA–DNA and DNA–ligand electrostatic interactions crucially depends on the electric polarizability of DNA, represented by its dielectric constant. This has remained unknown owing to the lack of experimental techniques able to measure it. Here, we experimentally determined the dielectric constant of double-stranded DNA in a native condensed state inside a single bacteriophage as well as the dielectric constants of the protein shell and tail that compose the viral capsid using scanning force microscopy. We supported the experimental data by theoretically determining the DNA dielectric constant using atomistic simulations. Both approaches yield a dielectric constant of DNA around 8, sensibly higher than commonly assumed, thus revealing a DNA intrinsic property essential for realistic computational description of DNA.

We demonstrate a method for quantitatively probing the local low-frequency dielectric constant of thin insulating films by nanoscale capacitance microscopy. The calibrated capacitance-distance curves are measured on the dielectric film and analyzed by using a tip-sample capacitance model here proposed. Applied to $\mathrm{Si}{\mathrm{O}}_2$ films as small as $1\times 1\mu {\mathrm{m}}^2$ area and $20–30\mathrm{nm}$ thickness, the method gives a dielectric constant on the submicron scale in agreement with the value determined on the large scale. The observed precision is set by the capacitance noise level of the instrument and the tip radius.

We present a procedure for calibrated complex impedance measurements and dielectric quantification with scanning microwave microscopy. The calibration procedure works in situ directly on the substrate with the specimen of interest and does not require any specific calibration sample. In the workflow tip-sample approach curves are used to extract calibrated complex impedance values and to convert measured S11 reflection signals into sample capacitance and resistance images. The dielectric constant of thin dielectric SiO2 films were determined from the capacitance images and approach curves using appropriate electrical tip-sample models and the εr value extracted at f = 19.81 GHz is in good agreement with the nominal value of εr ∼ 4. The capacitive and resistive material properties of a doped Si semiconductor sample were studied at different doping densities and tip-sample bias voltages. Following a simple serial model the capacitance-voltage spectroscopy curves are clearly related to the semiconductor depletion zone while the resistivity is rising with falling dopant density from 20 Ω to 20 kΩ. The proposed procedure of calibrated complex impedance measurements is simple and fast and the accuracy of the results is not affected by varying stray capacitances. It works for nanoscale samples on either fully dielectric or highly conductive substrates at frequencies between 1 and 20 GHz.