Developing highly efficient anchoring materials to suppress sodium polysulfides (NaPSs) shuttling is vital for the practical applications of sodium sulfur (Na-S) batteries. Herein, we systematically investigated pristine graphene and metal-N4@graphene (metal = Fe, Co, and Mn) as host materials for sulfur cathode to adsorb NaPSs via first-principles theory calculations. The computing results reveal that Fe-N4@graphene is a fairly promising anchoring material, in which the formed chemical bonds of Fe-S and N-Na ensure the stable adsorption of NaPSs. Furthermore, the doped transition metal iron could not only dramatically enhance the electronic conductivity and the adsorption strength of soluble NaPSs, but also significantly lower the decomposition energies of Na2S and Na2S2 on the surface of Fe-N4@graphene, which could effectively promote the full discharge of Na-S batteries. Our research provides a deep insight into the mechanism of anchoring and electrocatalytic effect of Fe-N4@graphene in sulfur cathode, which would be beneficial for the development of high-performance Na-S batteries.
Linear tunability has important applications since it can be realized by using linear control voltage and can be used conveniently without requiring nonlinear scale. In this paper, a kind of plasmonic nanostructure with a waveguide loaded with two rectangular cavities coupled by a circular cavity is proposed to produce four Fano resonance modes. The transfer matrix theory is employed to analyze the coupled-waveguide-cavity system. By analyzing the property of each single cavity, it reveals that the Fano resonances are originated from the coupling effect of the narrow modes in the metal-core circular cavity and the broad modes in the rectangular cavities. Owing to the interference of different modes, Fano peaks have different sensitivities on the cavity parameters, which can provide important guidance for designing Fano-resonance structures. Furthermore, adjusting the orientation angle of the metal core in the circular cavity can easily tune the line profile of Fano resonance modes in the structure. Especially, the figure of merit (FoM) increases linearly with the orientation angle and has a maximum of 8056. The proposed plasmonic system has the advantage of high transmission, ultracompact configuration, and easy integration, which can be applied in biochemical detecting or sensing, ultra-fast switching, slow-light technologies, and so on.
The ultra-high nickel cathode material NCM9622 is modified by PANI coating and Mo doping, and has excellent cycling stability and rate performance, effectively restrains surface/interface side reactions, reduces cationic mixing and accelerates the Li+ diffusion rate.
In this paper, a type of tunable plasmonic refractive index nanosensor based on Fano resonance is proposed and investigated. The sensor comprises a metal-insulator-metal (MIM) nanocavity with a center-deviated metal core and two side-coupled waveguides. By carefully adjusting the deviation angle and distance of the metal core in the cavity, Fano resonances can be obtained and modulated. The Fano resonances can be considered as results induced by the symmetry-breaking or geometric effect that affects the field distribution intensity at the coupling region between the right waveguide and the cavity. Such a field-distribution pattern change can be regarded as being caused by the interference between the waveguide modes and the cavity modes. The investigations demonstrate that the spectral positions and modulation depths of Fano resonances are highly sensitive to the deviation parameters. Furthermore, the figure of merit (FOM) value is calculated for different deviation angle. The result shows that this kind of tunable sensor has compact structure, high transmission, sharp Fano lineshape, and high sensitivity to the change in background refractive index. This work provides an effective method for flexibly tuning Fano resonance, which has wide applications in designing on-chip plasmonic nanosensors or other relevant devices, such as information modulators, optical filters, and ultra-fast switches.
This work presents TTFDNet, a transformer-based and transfer learning network for end-to-end depth estimation from single-frame fringe patterns in fringe projection profilometry. TTFDNet features a precise contour and coarse depth (PCCD) pre-processor, a global multi-dimensional fusion (GMDF) module and a progressive depth extractor (PDE). It utilizes transfer learning through fringe structure consistency evaluation (FSCE) to leverage the transformer’s benefits even on a small dataset. Tested on 208 scenes, the model achieved a mean absolute error (MAE) of 0.00372 mm, outperforming Unet (0.03458 mm) models, PDE (0.01063 mm) and PCTNet (0.00518 mm). It demonstrated precise measurement capabilities with deviations of ~90 μm for a 25.4 mm radius ball and ~6 μm for a 20 mm thick metal part. Additionally, TTFDNet showed excellent generalization and robustness in dynamic reconstruction and varied imaging conditions, making it appropriate for practical applications in manufacturing, automation and computer vision.
In this paper, the band-gap tunability of three monolayer semiconductors under hydrostatic pressure was intensively investigated based on first-principle simulations with a focus on monolayer antimony (Sb) as a semiconductor nanomaterial. As the benchmark study, monolayer black phosphorus (BP) and monolayer molybdenum disulfide (MoS2) were also investigated for comparison. Our calculations showed that the band-gap tunability of the monolayer Sb was much more sensitive to hydrostatic pressure than that of the monolayer BP and MoS2. Furthermore, the monolayer Sb was predicted to change from an indirect band-gap semiconductor to a conductor and to transform into a double-layer nanostructure above a critical pressure value ranging from 3 to 5 GPa. This finding opens an opportunity for nanoelectronic, flexible electronics and optoelectronic devices as well as sensors with the capabilities of deep band-gap tunability and semiconductor-to-metal transition by applying mechanical pressure.