Junghui Chen

Dr. Junghui Chen


Research Focus & Metrics

Academic Career Length

27Years (2000-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 January 2002 in Chemical Engineering Science
Verified
Journal Article
Closed access
JCJunghui Chen
Junghui Chen
KLKun-Chih Liu
Kun-Chih Liu

1 August 2017 in Energy & Fuels
Verified
Journal Article
Closed access
YLYi Liu
Yi Liu
YFYu Fan
Yu Fan
JCJunghui Chen
Junghui Chen

1 April 2018 in Energy
Verified
Journal Article
Closed access
LZLi Zhu
Li Zhu
JCJunghui Chen
Junghui Chen

26 November 2018 in IEEE Transactions on Industrial Informatics
Verified
Journal Article
Closed access
KWKai Wang
Kai Wang
BGBhushan Gopaluni
Bhushan Gopaluni
JCJunghui Chen
Junghui Chen
ZSZhihuan Song
Zhihuan Song
Batch process quality prediction is an important application in the chemical industry. The complexity of batch processes is characterized by multiphase, nonlinearity, dynamics and uneven durations, so modeling of batch processes is very difficult. Moreover, there are other challenges in quality prediction. As the process trajectories over the whole running duration make contributions to the final targets, the prediction issue embraces tremendously high-dimensional inputs but very low-dimensional outputs. That is, the prediction suffers from a severe dimensional imbalance between inputs and outputs. To conquer these difficulties, this paper proposes a new deep learning-based framework for complex features and quality prediction. The long short-term memory is used to extract quality-relevant hidden features from a long-time sequence in each phase, significantly reducing the predictor dimensions. And these features from different phases are further integrated and compressed by a stacked auto-encoder. A practical industrial example testifies to the efficacy of the proposed framework.

4 May 2015 in Industrial & Engineering Chemistry Research
Verified
Journal Article
Closed access
YLYi Liu
Yi Liu
TCTao Chen
Tao Chen
JCJunghui Chen
Junghui Chen

27 March 2013 in IEEE Electron Device Letters
Verified
Journal Article
Closed access
TCTing-Chang Chang
Ting-Chang Chang
RZRui Zhang
Rui Zhang
TCTing-Chang Chang
Ting-Chang Chang
TTTsung-Ming Tsai
Tsung-Ming Tsai
JLJ. C. Lou
J. C. Lou
SSSimon M. Sze
Simon M. Sze
In this letter, a double-active-layer (Zr:SiOx/C:SiOx) resistive switching memory device with a high on/off resistance ratio and small working current (0.02 mA), is presented. Through the analysis of Raman and Fourier transform infrared spectroscopy spectra, we find that graphene oxide exists in the C:SiOx layer. It can be observed that Zr:SiOx/C:SiOx structure has superior switching performance and higher stability compared with the single-active-layer (Zr:SiOx) structure, which is attributed to the existence of graphene oxide flakes formed during the sputter process. I-V characteristics under a series of increasing temperature were analyzed to testify the carrier hopping distance variation, which is further verified by our graphene oxide redox reaction model.