A Ge-SiGe multiple quantum well structure created by low energy plasma enhanced chemical vapour deposition, with nominal well thickness of 5.4 nm separated by 3.6 nm SiGe spacers, is analysed quantitatively using scanning transmission electron microscopy. Both high angle annular dark field imaging and electron energy loss spectroscopy show that the interfaces are not completely sharp, suggesting that there is some intermixing of Si and Ge at each interface. Two methods are compared for the quantification of the spectroscopy datasets: a self-consistent approach that calculates binary substitutional trends without requiring experimental or computational k-factors from elsewhere and a standards-based cross sectional calculation. Whilst the cross section approach is shown to be ultimately more reliable, the self-consistent approach provides surprisingly good results. It is found that the Ge quantum wells are actually about 95% Ge and that the spacers, whilst apparently peaking at about 35% Si, contain significant interdiffused Ge at each side. This result is shown to be not just an artefact of electron beam spreading in the sample, but mostly arising from a real chemical interdiffusion resulting from the growth. Similar results are found by use of X-ray diffraction from a similar area of the sample. Putting the results together suggests a real interdiffusion with a standard deviation of about 0.87 nm, or put another way—a true width defined from 10%–90% of the compositional gradient of about 2.9 nm. This suggests an intrinsic limit on how sharp such interfaces can be grown by this method and, whilst 95% Ge quantum wells (QWs) still behave well enough to have good properties, any attempt to grow thinner QWs would require modifications to the growth procedure to reduce this interdiffusion, in order to maintain a composition of ≥95% Ge.

The recently developed precession electron diffraction (PED) technique in scanning transmission electron microscopy has been used to elucidate the local strain distribution and crystalline misorientation in a CMOS fabricated strained Ge microdisk structure grown on a Si substrate. Tensile strained Ge and GeSn structures are considered to be potential CMOS compatible optical sources, as both Sn alloying and strain can lead to a direct band-structure and lasing. The ability to take nanometer resolution, experimental measurements of the cross-sectional strain distribution, is important to understand modal gain and, therefore, ultimate device performance. In this work, we demonstrate PED techniques to measure the cross-sectional strain field in tensile Ge microdisks strained by SiN stressors. The strain maps are interpreted and compared with a finite element model of the strain in the investigated structure, which shows good agreement, and, therefore, highlights the applicability of PED techniques for mapping strained photonic structures. The technique also allows for the observation of strain relaxation due to dislocation pileup, further demonstrating the benefit of such experimental techniques.

An environmentally friendlier solution processing has been introduced to fabricate zirconium oxide (ZrO₂) films on quartz substrates, using spin coating of simple water-based solution. The films cured with UV-A = 330 nm for different times (40, 80, 120 min) were investigated for structural and optical properties and compared with thermally annealed film (at 350 °C). XRD and Raman spectroscopy showed amorphous structure in all the samples with no significant phase transformation with UV-A exposure. AFM microscopy showed smooth and crack free films with surface roughness ≤2 nm that reduced with UV-A exposure. Ultraviolet-visible (UV–Vis) spectroscopy demonstrated optical transmittance ≥88% and energy band gap variations as 4.52–4.70 eV. Optical constants were found from spectroscopic ellipsometry (SE). The refractive index (n) values, measured at 470 nm increased from 1.73 to 2.74 as the UV-A exposure prolonged indicating densification and decreasing porosity of the films. The extinction coefficient k decreased from 0.32 to 0.19 indicating reduced optical losses in the films under the UV-A exposure. The photoluminescence (PL) spectra exhibited more pronounced UV emissions which grew intense with UV-A exposure thereby improving the film quality. It is concluded that UV-A irradiation can significantly enhance the optical properties of ZrO₂ films with minimal changes induced in the structure as compared to thermally treated film. Moreover, the present work indicates that water-based solution processing has the potential to produce high-quality ZrO₂ films for low cost and environmental friendlier technologies. The work also highlights the use of UV-A radiations as an alternate to high temperature thermal annealing for improved quality.